Quantum-confined Impurities as Single-electron Quantum Dots: Application in Terahertz Emitters

P. Harrison, M. P. Halsall, W. M. Zheng

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Citations (Scopus)

Abstract

This work will demonstrate that impurities within semiconductor crystals can be thought of as the ultimate in quantum dots, with the three-dimensional confining potential being provided by individual atoms which are each capable of localising single electrons or holes. A heterostructure confining potential provides a means to tune the energy levels of the impurities. Just as importantly, quantum well systems with these embedded quantum dots can be fabricated to very high qualities with contemporary molecular beam epitaxy growth techniques. In this work the first steps to utilizing internal transitions of these single atom quantum dots to develop Terahertz lasers are reported. These include time resolved measurements of the excited impurity state lifetimes performed at the Dutch free-electron laser.

Original languageEnglish
Title of host publicationProceedings of 11th International Symposium on Ultrafast Phenomena in Semiconductors 2001
EditorsS Asmontas, A Dargys, H.G. Roskos
PublisherTrans Tech Publications Ltd
Pages165-172
Number of pages8
Volume384-385
ISBN (Electronic)9783035705676
ISBN (Print)9780878498901
DOIs
Publication statusPublished - 1 Jan 2002
Externally publishedYes
EventProceedings of the 11th International Symposium on Ultrafast Phenomena in Semiconductors - Vilnius, Lithuania
Duration: 27 Aug 200129 Aug 2001
Conference number: 11

Publication series

NameMaterials Science Forum
PublisherTrans Tech Publications
Volume384-385
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

ConferenceProceedings of the 11th International Symposium on Ultrafast Phenomena in Semiconductors
Abbreviated title11-UFPS
Country/TerritoryLithuania
CityVilnius
Period27/08/0129/08/01

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