Quantum-confined Impurities as Single-electron Quantum Dots: Application in Terahertz Emitters

P. Harrison; M. P. Halsall; W. M. Zheng

doi:10.4028/www.scientific.net/msf.384-385.165

Quantum-confined Impurities as Single-electron Quantum Dots: Application in Terahertz Emitters

P. Harrison, M. P. Halsall, W. M. Zheng

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Citations (Scopus)

Abstract

This work will demonstrate that impurities within semiconductor crystals can be thought of as the ultimate in quantum dots, with the three-dimensional confining potential being provided by individual atoms which are each capable of localising single electrons or holes. A heterostructure confining potential provides a means to tune the energy levels of the impurities. Just as importantly, quantum well systems with these embedded quantum dots can be fabricated to very high qualities with contemporary molecular beam epitaxy growth techniques. In this work the first steps to utilizing internal transitions of these single atom quantum dots to develop Terahertz lasers are reported. These include time resolved measurements of the excited impurity state lifetimes performed at the Dutch free-electron laser.

Original language	English
Title of host publication	Proceedings of 11th International Symposium on Ultrafast Phenomena in Semiconductors 2001
Editors	S Asmontas, A Dargys, H.G. Roskos
Publisher	Trans Tech Publications Ltd
Pages	165-172
Number of pages	8
Volume	384-385
ISBN (Electronic)	9783035705676
ISBN (Print)	9780878498901
DOIs	https://doi.org/10.4028/www.scientific.net/msf.384-385.165
Publication status	Published - 1 Jan 2002
Externally published	Yes
Event	11th International Symposium on Ultrafast Phenomena in Semiconductors - Vilnius, Lithuania Duration: 27 Aug 2001 → 29 Aug 2001 Conference number: 11

Publication series

Name	Materials Science Forum
Publisher	Trans Tech Publications
Volume	384-385
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Conference

Conference	11th International Symposium on Ultrafast Phenomena in Semiconductors
Abbreviated title	11-UFPS
Country/Territory	Lithuania
City	Vilnius
Period	27/08/01 → 29/08/01

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Cite this

Harrison, P., Halsall, M. P., & Zheng, W. M. (2002). Quantum-confined Impurities as Single-electron Quantum Dots: Application in Terahertz Emitters. In S. Asmontas, A. Dargys, & H. G. Roskos (Eds.), Proceedings of 11th International Symposium on Ultrafast Phenomena in Semiconductors 2001 (Vol. 384-385, pp. 165-172). (Materials Science Forum; Vol. 384-385). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/msf.384-385.165

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abstract = "This work will demonstrate that impurities within semiconductor crystals can be thought of as the ultimate in quantum dots, with the three-dimensional confining potential being provided by individual atoms which are each capable of localising single electrons or holes. A heterostructure confining potential provides a means to tune the energy levels of the impurities. Just as importantly, quantum well systems with these embedded quantum dots can be fabricated to very high qualities with contemporary molecular beam epitaxy growth techniques. In this work the first steps to utilizing internal transitions of these single atom quantum dots to develop Terahertz lasers are reported. These include time resolved measurements of the excited impurity state lifetimes performed at the Dutch free-electron laser.",

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Harrison, P, Halsall, MP & Zheng, WM 2002, Quantum-confined Impurities as Single-electron Quantum Dots: Application in Terahertz Emitters. in S Asmontas, A Dargys & HG Roskos (eds), Proceedings of 11th International Symposium on Ultrafast Phenomena in Semiconductors 2001. vol. 384-385, Materials Science Forum, vol. 384-385, Trans Tech Publications Ltd, pp. 165-172, 11th International Symposium on Ultrafast Phenomena in Semiconductors , Vilnius, Lithuania, 27/08/01. https://doi.org/10.4028/www.scientific.net/msf.384-385.165

Quantum-confined Impurities as Single-electron Quantum Dots : Application in Terahertz Emitters. / Harrison, P.; Halsall, M. P.; Zheng, W. M.

Proceedings of 11th International Symposium on Ultrafast Phenomena in Semiconductors 2001. ed. / S Asmontas; A Dargys; H.G. Roskos. Vol. 384-385 Trans Tech Publications Ltd, 2002. p. 165-172 (Materials Science Forum; Vol. 384-385).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - This work will demonstrate that impurities within semiconductor crystals can be thought of as the ultimate in quantum dots, with the three-dimensional confining potential being provided by individual atoms which are each capable of localising single electrons or holes. A heterostructure confining potential provides a means to tune the energy levels of the impurities. Just as importantly, quantum well systems with these embedded quantum dots can be fabricated to very high qualities with contemporary molecular beam epitaxy growth techniques. In this work the first steps to utilizing internal transitions of these single atom quantum dots to develop Terahertz lasers are reported. These include time resolved measurements of the excited impurity state lifetimes performed at the Dutch free-electron laser.

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Harrison P, Halsall MP, Zheng WM. Quantum-confined Impurities as Single-electron Quantum Dots: Application in Terahertz Emitters. In Asmontas S, Dargys A, Roskos HG, editors, Proceedings of 11th International Symposium on Ultrafast Phenomena in Semiconductors 2001. Vol. 384-385. Trans Tech Publications Ltd. 2002. p. 165-172. (Materials Science Forum). Epub 2002 Jan 1. doi: 10.4028/www.scientific.net/msf.384-385.165

Quantum-confined Impurities as Single-electron Quantum Dots: Application in Terahertz Emitters

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