Quantum dot selective area intermixing for broadband light sources

K. J. Zhou, Q. Jiang, Z. Y. Zhang, S. M. Chen, H. Y. Liu, Z. H. Lu, K. Kennedy, S. J. Matcher, R. A. Hogg

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)


We report a comparison of different capping materials on the intermixing of modulation p-doped InAs/In(Ga)As quantum dots (QD). QD materials with different caps are shown to exhibit significant difference in their optical properties during the annealing process. The selective area intermixing technique is demonstrated to laterally integrate two and three different QD light emitting devices with a single electrical contact. A spectral bandwidth of 240nm centered at 1188nm is achieved in a device with two sections. By calculating the point spread function for the obtained emission spectra, and applying the Rayleigh criteria for resolution, an axial resolution of 3.5μm is deduced. A three section device realizes a spectral bandwidth of 310nm centered at 1145nm. This corresponds to an axial resolution of 2.4μm. Such a small predicted axial resolution is highly desirable in optical coherence tomography system and other coherencebased systems applications.

Original languageEnglish
Pages (from-to)26950-26957
Number of pages8
JournalOptics Express
Issue number24
Early online date15 Nov 2012
Publication statusPublished - 19 Nov 2012
Externally publishedYes


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