@inproceedings{3c52b792b0484f75b27c3d6202666076,
title = "Quantum dots-in-a-well infrared photodetectors grown by MOCVD",
abstract = "The performance characteristics of InGaAs/GaAs quantum-dots-in-a-well infrared photodetectors grown by MOCVD are reported. A responsivity of 40mA/W at the peak detectivity of 3.2×109cmHz1/2/W has been achieved at a temperature of 77K. In an effort to understand the spectral behavior of the characterized devices band structure modeling has been performed.",
keywords = "Metal-organic chemical vapor deposition, Quantum dot in frared photodetector",
author = "Greg Jolley and Lan Fu and Tan, {H. Hoe} and C. Jagadish and N. Vukmirovi{\'c} and P. Harrison",
year = "2007",
month = apr,
day = "16",
doi = "10.1109/ICONN.2006.340642",
language = "English",
isbn = "9781424404525",
series = "International Conference on Nanoscience and Nanotechnology, ICONN",
publisher = "IEEE",
pages = "419--422",
editor = "C. Jagadish and Lu, {G. Q. Max}",
booktitle = "Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN",
address = "United States",
note = "2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006 ; Conference date: 03-07-2006 Through 07-07-2006",
}