Radiative Recombination Spectra of Heavily p-Type δ-Doped GaAs/AlAs MQWs

J. Kundrotas, A. Čerškus, G. Valušis, M. Lachab, S. P. Khanna, P. Harrison, E. H. Linfield

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


We present a study of the photoluminescence properties of heavily Be 5-doped GaAs/AlAs multiple quantum wells measured at room and liquid nitrogen temperatures. Possible mechanisms for photocarriers recombination are discussed, with a particular focus on the peculiarities of the excitonic and free carriers-acceptors photoluminescence emissions occurring below and above the Mott metal-insulator transition. Moreover, based on a simple theoretical model, it is found that the critical impurities concentration to observe the Mott transition in the multiple quantum wells samples exhibiting 15 nm wells width and 5 nm thick barrier layers is ≈ 3 × 1012 cm-2.

Original languageEnglish
Pages (from-to)963-966
Number of pages4
JournalActa Physica Polonica A
Issue number3
Publication statusPublished - 1 Mar 2008
Externally publishedYes
Event13th International Symposium on Ultrafast Phenomena in Semiconductors - Vilnius, Lithuania
Duration: 26 Aug 200729 Aug 2007
Conference number: 13


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