We present a study of the photoluminescence properties of heavily Be 5-doped GaAs/AlAs multiple quantum wells measured at room and liquid nitrogen temperatures. Possible mechanisms for photocarriers recombination are discussed, with a particular focus on the peculiarities of the excitonic and free carriers-acceptors photoluminescence emissions occurring below and above the Mott metal-insulator transition. Moreover, based on a simple theoretical model, it is found that the critical impurities concentration to observe the Mott transition in the multiple quantum wells samples exhibiting 15 nm wells width and 5 nm thick barrier layers is ≈ 3 × 1012 cm-2.
|Number of pages
|Acta Physica Polonica A
|Published - 1 Mar 2008
|13th International Symposium on Ultrafast Phenomena in Semiconductors - Vilnius, Lithuania
Duration: 26 Aug 2007 → 29 Aug 2007
Conference number: 13