Radiative Recombination Spectra of Heavily p-Type δ-Doped GaAs/AlAs MQWs

J. Kundrotas; A. Čerškus; G. Valušis; M. Lachab; S. P. Khanna; P. Harrison; E. H. Linfield

doi:10.12693/APhysPolA.113.963

Radiative Recombination Spectra of Heavily p-Type δ-Doped GaAs/AlAs MQWs

J. Kundrotas, A. Čerškus, G. Valušis, M. Lachab, S. P. Khanna, P. Harrison, E. H. Linfield

Research output: Contribution to journal › Conference article › peer-review

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Abstract

We present a study of the photoluminescence properties of heavily Be 5-doped GaAs/AlAs multiple quantum wells measured at room and liquid nitrogen temperatures. Possible mechanisms for photocarriers recombination are discussed, with a particular focus on the peculiarities of the excitonic and free carriers-acceptors photoluminescence emissions occurring below and above the Mott metal-insulator transition. Moreover, based on a simple theoretical model, it is found that the critical impurities concentration to observe the Mott transition in the multiple quantum wells samples exhibiting 15 nm wells width and 5 nm thick barrier layers is ≈ 3 × 10¹² cm^-2.

Original language	English
Pages (from-to)	963-966
Number of pages	4
Journal	Acta Physica Polonica A
Volume	113
Issue number	3
DOIs	https://doi.org/10.12693/APhysPolA.113.963
Publication status	Published - 1 Mar 2008
Externally published	Yes
Event	13th International Symposium on Ultrafast Phenomena in Semiconductors - Vilnius, Lithuania Duration: 26 Aug 2007 → 29 Aug 2007 Conference number: 13

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title = "Radiative Recombination Spectra of Heavily p-Type δ-Doped GaAs/AlAs MQWs",

abstract = "We present a study of the photoluminescence properties of heavily Be 5-doped GaAs/AlAs multiple quantum wells measured at room and liquid nitrogen temperatures. Possible mechanisms for photocarriers recombination are discussed, with a particular focus on the peculiarities of the excitonic and free carriers-acceptors photoluminescence emissions occurring below and above the Mott metal-insulator transition. Moreover, based on a simple theoretical model, it is found that the critical impurities concentration to observe the Mott transition in the multiple quantum wells samples exhibiting 15 nm wells width and 5 nm thick barrier layers is ≈ 3 × 1012 cm-2.",

keywords = "Photoluminescence, Semiconducting gallium arsenide, Thick films",

author = "J. Kundrotas and A. {\v C}er{\v s}kus and G. Valu{\v s}is and M. Lachab and Khanna, \{S. P.\} and P. Harrison and Linfield, \{E. H.\}",

year = "2008",

month = mar,

day = "1",

doi = "10.12693/APhysPolA.113.963",

language = "English",

volume = "113",

pages = "963--966",

journal = "Acta Physica Polonica A",

issn = "0587-4246",

publisher = "Polska Akademia Nauk",

number = "3",

note = "13th International Symposium on Ultrafast Phenomena in Semiconductors ; Conference date: 26-08-2007 Through 29-08-2007",

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TY - JOUR

T1 - Radiative Recombination Spectra of Heavily p-Type δ-Doped GaAs/AlAs MQWs

AU - Kundrotas, J.

AU - Čerškus, A.

AU - Valušis, G.

AU - Lachab, M.

AU - Khanna, S. P.

AU - Harrison, P.

AU - Linfield, E. H.

N1 - Conference code: 13

PY - 2008/3/1

Y1 - 2008/3/1

N2 - We present a study of the photoluminescence properties of heavily Be 5-doped GaAs/AlAs multiple quantum wells measured at room and liquid nitrogen temperatures. Possible mechanisms for photocarriers recombination are discussed, with a particular focus on the peculiarities of the excitonic and free carriers-acceptors photoluminescence emissions occurring below and above the Mott metal-insulator transition. Moreover, based on a simple theoretical model, it is found that the critical impurities concentration to observe the Mott transition in the multiple quantum wells samples exhibiting 15 nm wells width and 5 nm thick barrier layers is ≈ 3 × 1012 cm-2.

AB - We present a study of the photoluminescence properties of heavily Be 5-doped GaAs/AlAs multiple quantum wells measured at room and liquid nitrogen temperatures. Possible mechanisms for photocarriers recombination are discussed, with a particular focus on the peculiarities of the excitonic and free carriers-acceptors photoluminescence emissions occurring below and above the Mott metal-insulator transition. Moreover, based on a simple theoretical model, it is found that the critical impurities concentration to observe the Mott transition in the multiple quantum wells samples exhibiting 15 nm wells width and 5 nm thick barrier layers is ≈ 3 × 1012 cm-2.

KW - Photoluminescence

KW - Semiconducting gallium arsenide

KW - Thick films

UR - https://www.scopus.com/pages/publications/41349123310

U2 - 10.12693/APhysPolA.113.963

DO - 10.12693/APhysPolA.113.963

M3 - Conference article

AN - SCOPUS:41349123310

SN - 0587-4246

VL - 113

SP - 963

EP - 966

JO - Acta Physica Polonica A

JF - Acta Physica Polonica A

IS - 3

T2 - 13th International Symposium on Ultrafast Phenomena in Semiconductors

Y2 - 26 August 2007 through 29 August 2007

ER -

Radiative Recombination Spectra of Heavily p-Type δ-Doped GaAs/AlAs MQWs

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