@article{c14879fd35764e44a6b82604db1b2800,
title = "Radiative recombination spectra of p-type δ-doped GaAs/AlAs multiple quantum wells near the Mott transition",
abstract = "Photoluminescence (PL) spectra of beryllium δ -doped GaAsAlAs multiple quantum wells are studied over a range of doping concentrations. Possible mechanisms for carrier recombination, both above and below the Mott metal-insulator transition, are discussed. In 15 nm width Be δ -doped GaAsAlAs quantum wells, it is found that the Mott transition can be observed if the acceptor concentration (NBe) 3× 1012 cm-2. At doping concentrations near the Mott transition band the PL spectra are dominated by excitons-bound-to-acceptor impurity recombinations. Above the Mott transition, the radiative recombination of free electrons with a two-dimensional hole gas is found to be the dominant recombination mechanism.",
keywords = "Alkaline earth metals, Beryllium, Light emission, Luminescence, Mechanisms, Metal insulator boundaries, Metals, Semiconducting gallium compounds, Semiconductor insulator boundaries, Semiconductor quantum wells, Semiconductor quantum wires, Two dimensional, Wells",
author = "J. Kundrotas and A. {\v C}er{\v s}kus and G. Valu{\v s}is and M. Lachab and Khanna, {S. P.} and P. Harrison and Linfield, {E. H.}",
note = "Funding Information: We highly appreciate A. D. Steikūnienė and G. J. Steikūnas for their kind assistance in samples processing. The work was partly supported by the Lithuanian State Science and Studies Foundation under the Contract No. C-07004. The research at the Semiconductor Physics Institute was conducted under the topic “Terahertz Photonics and Spectroscopy” (No. 165). The University of Leeds acknowledge support from EPSRC (UK) and HMGCC.",
year = "2008",
month = jun,
day = "15",
doi = "10.1063/1.2943262",
language = "English",
volume = "103",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "12",
}