Radiative recombination spectra of p-type δ-doped GaAs/AlAs multiple quantum wells near the Mott transition

J. Kundrotas; A. Čerškus; G. Valušis; M. Lachab; S. P. Khanna; P. Harrison; E. H. Linfield

doi:10.1063/1.2943262

Radiative recombination spectra of p-type δ-doped GaAs/AlAs multiple quantum wells near the Mott transition

J. Kundrotas, A. Čerškus, G. Valušis, M. Lachab, S. P. Khanna, P. Harrison, E. H. Linfield

Research output: Contribution to journal › Article › peer-review

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Abstract

Photoluminescence (PL) spectra of beryllium δ -doped GaAsAlAs multiple quantum wells are studied over a range of doping concentrations. Possible mechanisms for carrier recombination, both above and below the Mott metal-insulator transition, are discussed. In 15 nm width Be δ -doped GaAsAlAs quantum wells, it is found that the Mott transition can be observed if the acceptor concentration (NBe) 3× 1012 cm-2. At doping concentrations near the Mott transition band the PL spectra are dominated by excitons-bound-to-acceptor impurity recombinations. Above the Mott transition, the radiative recombination of free electrons with a two-dimensional hole gas is found to be the dominant recombination mechanism.

Original language	English
Article number	123108
Journal	Journal of Applied Physics
Volume	103
Issue number	12
DOIs	https://doi.org/10.1063/1.2943262
Publication status	Published - 15 Jun 2008
Externally published	Yes

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@article{c14879fd35764e44a6b82604db1b2800,

title = "Radiative recombination spectra of p-type δ-doped GaAs/AlAs multiple quantum wells near the Mott transition",

abstract = "Photoluminescence (PL) spectra of beryllium δ -doped GaAsAlAs multiple quantum wells are studied over a range of doping concentrations. Possible mechanisms for carrier recombination, both above and below the Mott metal-insulator transition, are discussed. In 15 nm width Be δ -doped GaAsAlAs quantum wells, it is found that the Mott transition can be observed if the acceptor concentration (NBe) 3× 1012 cm-2. At doping concentrations near the Mott transition band the PL spectra are dominated by excitons-bound-to-acceptor impurity recombinations. Above the Mott transition, the radiative recombination of free electrons with a two-dimensional hole gas is found to be the dominant recombination mechanism.",

keywords = "Alkaline earth metals, Beryllium, Light emission, Luminescence, Mechanisms, Metal insulator boundaries, Metals, Semiconducting gallium compounds, Semiconductor insulator boundaries, Semiconductor quantum wells, Semiconductor quantum wires, Two dimensional, Wells",

author = "J. Kundrotas and A. {\v C}er{\v s}kus and G. Valu{\v s}is and M. Lachab and Khanna, \{S. P.\} and P. Harrison and Linfield, \{E. H.\}",

note = "Funding Information: We highly appreciate A. D. Steikūnienė and G. J. Steikūnas for their kind assistance in samples processing. The work was partly supported by the Lithuanian State Science and Studies Foundation under the Contract No. C-07004. The research at the Semiconductor Physics Institute was conducted under the topic “Terahertz Photonics and Spectroscopy” (No. 165). The University of Leeds acknowledge support from EPSRC (UK) and HMGCC.",

year = "2008",

month = jun,

day = "15",

doi = "10.1063/1.2943262",

language = "English",

volume = "103",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Radiative recombination spectra of p-type δ-doped GaAs/AlAs multiple quantum wells near the Mott transition

AU - Kundrotas, J.

AU - Čerškus, A.

AU - Valušis, G.

AU - Lachab, M.

AU - Khanna, S. P.

AU - Harrison, P.

AU - Linfield, E. H.

N1 - Funding Information: We highly appreciate A. D. Steikūnienė and G. J. Steikūnas for their kind assistance in samples processing. The work was partly supported by the Lithuanian State Science and Studies Foundation under the Contract No. C-07004. The research at the Semiconductor Physics Institute was conducted under the topic “Terahertz Photonics and Spectroscopy” (No. 165). The University of Leeds acknowledge support from EPSRC (UK) and HMGCC.

PY - 2008/6/15

Y1 - 2008/6/15

N2 - Photoluminescence (PL) spectra of beryllium δ -doped GaAsAlAs multiple quantum wells are studied over a range of doping concentrations. Possible mechanisms for carrier recombination, both above and below the Mott metal-insulator transition, are discussed. In 15 nm width Be δ -doped GaAsAlAs quantum wells, it is found that the Mott transition can be observed if the acceptor concentration (NBe) 3× 1012 cm-2. At doping concentrations near the Mott transition band the PL spectra are dominated by excitons-bound-to-acceptor impurity recombinations. Above the Mott transition, the radiative recombination of free electrons with a two-dimensional hole gas is found to be the dominant recombination mechanism.

AB - Photoluminescence (PL) spectra of beryllium δ -doped GaAsAlAs multiple quantum wells are studied over a range of doping concentrations. Possible mechanisms for carrier recombination, both above and below the Mott metal-insulator transition, are discussed. In 15 nm width Be δ -doped GaAsAlAs quantum wells, it is found that the Mott transition can be observed if the acceptor concentration (NBe) 3× 1012 cm-2. At doping concentrations near the Mott transition band the PL spectra are dominated by excitons-bound-to-acceptor impurity recombinations. Above the Mott transition, the radiative recombination of free electrons with a two-dimensional hole gas is found to be the dominant recombination mechanism.

KW - Alkaline earth metals

KW - Beryllium

KW - Light emission

KW - Luminescence

KW - Mechanisms

KW - Metal insulator boundaries

KW - Metals

KW - Semiconducting gallium compounds

KW - Semiconductor insulator boundaries

KW - Semiconductor quantum wells

KW - Semiconductor quantum wires

KW - Two dimensional

KW - Wells

UR - https://www.scopus.com/pages/publications/46449089381

U2 - 10.1063/1.2943262

DO - 10.1063/1.2943262

M3 - Article

AN - SCOPUS:46449089381

SN - 0021-8979

VL - 103

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

M1 - 123108

ER -

Radiative recombination spectra of p-type δ-doped GaAs/AlAs multiple quantum wells near the Mott transition

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