Abstract
including helium, lithium and boron, at different ion fluences ranging from 1×1016 ions/cm2 to 1×1016 ions/cm2. The effect of varying the ion implantation energies ranging from 40 keV to 160keV were also investigated on samples implanted by helium ions. Finally lithium implanted samples was studied using the 488 nm and 514 nm Raman laser lines. Micro Raman spectroscopy (µ-RS) measurements indicated that indeed ion implantation induced a phase change to the h-BN, evident from the longitudinal optical (LO) peaks at wavenumbers 1298 cm−1 and 1304 cm−1 appearing in the spectra after implantation. The nature and extent of these new peaks, and their dependence on the different implantation parameters is discussed.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the South African institute of Physics (2011) |
| Editors | Ilsa Basson, André E Botha |
| Place of Publication | South Africa |
| Publisher | south African Institute of Physics |
| Volume | 1 |
| ISBN (Print) | 9781868886883 |
| Publication status | Published - 11 Sep 2011 |
| Externally published | Yes |
| Event | 56th Annual Conference of the South African Institute of Physics - Gauteng, South Africa Duration: 12 Jul 2011 → 15 Jul 2011 Conference number: 56 http://www.saip.org.za/index.php/news-and-events/saip-annual-conferences/152-saip2012-proceedings |
Conference
| Conference | 56th Annual Conference of the South African Institute of Physics |
|---|---|
| Abbreviated title | SAIP 2011 |
| Country | South Africa |
| City | Gauteng |
| Period | 12/07/11 → 15/07/11 |
| Internet address |
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Raman Characterization of the Phase Transition of Ion Implanted Hexagonal Boron Nitride to cubic Boron Nitride Nanoparticles. / Aradi, Emily; Erasmus, Rudolph M.; Naidoo, S. R.; Derry, Trevor E.
Proceedings of the South African institute of Physics (2011). ed. / Ilsa Basson; André E Botha. Vol. 1 South Africa : south African Institute of Physics, 2011.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Raman Characterization of the Phase Transition of Ion Implanted Hexagonal Boron Nitride to cubic Boron Nitride Nanoparticles
AU - Aradi, Emily
AU - Erasmus, Rudolph M.
AU - Naidoo, S. R.
AU - Derry, Trevor E.
PY - 2011/9/11
Y1 - 2011/9/11
N2 - We investigated the phase transition of hexagonal boron nitride (h-BN) to the c-BN form by the ion implantation process. Raman Spectroscopy was the major technique used in the characterization of the possible h-BN - c-BN phase transformation. The hexagonal BN samples were implanted with various ionsincluding helium, lithium and boron, at different ion fluences ranging from 1×1016 ions/cm2 to 1×1016 ions/cm2. The effect of varying the ion implantation energies ranging from 40 keV to 160keV were also investigated on samples implanted by helium ions. Finally lithium implanted samples was studied using the 488 nm and 514 nm Raman laser lines. Micro Raman spectroscopy (µ-RS) measurements indicated that indeed ion implantation induced a phase change to the h-BN, evident from the longitudinal optical (LO) peaks at wavenumbers 1298 cm−1 and 1304 cm−1 appearing in the spectra after implantation. The nature and extent of these new peaks, and their dependence on the different implantation parameters is discussed.
AB - We investigated the phase transition of hexagonal boron nitride (h-BN) to the c-BN form by the ion implantation process. Raman Spectroscopy was the major technique used in the characterization of the possible h-BN - c-BN phase transformation. The hexagonal BN samples were implanted with various ionsincluding helium, lithium and boron, at different ion fluences ranging from 1×1016 ions/cm2 to 1×1016 ions/cm2. The effect of varying the ion implantation energies ranging from 40 keV to 160keV were also investigated on samples implanted by helium ions. Finally lithium implanted samples was studied using the 488 nm and 514 nm Raman laser lines. Micro Raman spectroscopy (µ-RS) measurements indicated that indeed ion implantation induced a phase change to the h-BN, evident from the longitudinal optical (LO) peaks at wavenumbers 1298 cm−1 and 1304 cm−1 appearing in the spectra after implantation. The nature and extent of these new peaks, and their dependence on the different implantation parameters is discussed.
KW - Boron Nitride
KW - ion implantation
KW - raman spectroscopy
KW - nanoparticles
UR - http://events.saip.org.za/getFile.py/access?contribId=327&sessionId=17&resId=0&materialId=paper&confId=7
UR - http://inspirehep.net/record/1424610
UR - http://www.saip.org.za/index.php/news-and-events/saip-annual-conferences/152-saip2012-proceedings
M3 - Conference contribution
SN - 9781868886883
VL - 1
BT - Proceedings of the South African institute of Physics (2011)
A2 - Basson, Ilsa
A2 - Botha, André E
PB - south African Institute of Physics
CY - South Africa
ER -