Raman Characterization of the Phase Transition of Ion Implanted Hexagonal Boron Nitride to cubic Boron Nitride Nanoparticles

Emily Aradi, Rudolph M. Erasmus, S. R. Naidoo, Trevor E. Derry

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated the phase transition of hexagonal boron nitride (h-BN) to the c-BN form by the ion implantation process. Raman Spectroscopy was the major technique used in the characterization of the possible h-BN - c-BN phase transformation. The hexagonal BN samples were implanted with various ions
including helium, lithium and boron, at different ion fluences ranging from 1×1016 ions/cm2 to 1×1016 ions/cm2. The effect of varying the ion implantation energies ranging from 40 keV to 160keV were also investigated on samples implanted by helium ions. Finally lithium implanted samples was studied using the 488 nm and 514 nm Raman laser lines. Micro Raman spectroscopy (µ-RS) measurements indicated that indeed ion implantation induced a phase change to the h-BN, evident from the longitudinal optical (LO) peaks at wavenumbers 1298 cm−1 and 1304 cm−1 appearing in the spectra after implantation. The nature and extent of these new peaks, and their dependence on the different implantation parameters is discussed.
LanguageEnglish
Title of host publicationProceedings of the South African institute of Physics (2011)
EditorsIlsa Basson, André E Botha
Place of PublicationSouth Africa
Publishersouth African Institute of Physics
Volume1
ISBN (Print)9781868886883
Publication statusPublished - 11 Sep 2011
Externally publishedYes
Event56th Annual Conference of the South African Institute of Physics - Gauteng, South Africa
Duration: 12 Jul 201115 Jul 2011
Conference number: 56
http://www.saip.org.za/index.php/news-and-events/saip-annual-conferences/152-saip2012-proceedings

Conference

Conference56th Annual Conference of the South African Institute of Physics
Abbreviated titleSAIP 2011
CountrySouth Africa
CityGauteng
Period12/07/1115/07/11
Internet address

Fingerprint

boron nitrides
ion implantation
nanoparticles
implantation
Raman spectroscopy
lithium
ions
Raman lasers
helium ions
phase transformations
fluence
boron
helium
energy

Cite this

Aradi, E., Erasmus, R. M., Naidoo, S. R., & Derry, T. E. (2011). Raman Characterization of the Phase Transition of Ion Implanted Hexagonal Boron Nitride to cubic Boron Nitride Nanoparticles. In I. Basson, & A. E. Botha (Eds.), Proceedings of the South African institute of Physics (2011) (Vol. 1). South Africa: south African Institute of Physics.
Aradi, Emily ; Erasmus, Rudolph M. ; Naidoo, S. R. ; Derry, Trevor E. / Raman Characterization of the Phase Transition of Ion Implanted Hexagonal Boron Nitride to cubic Boron Nitride Nanoparticles. Proceedings of the South African institute of Physics (2011). editor / Ilsa Basson ; André E Botha. Vol. 1 South Africa : south African Institute of Physics, 2011.
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abstract = "We investigated the phase transition of hexagonal boron nitride (h-BN) to the c-BN form by the ion implantation process. Raman Spectroscopy was the major technique used in the characterization of the possible h-BN - c-BN phase transformation. The hexagonal BN samples were implanted with various ionsincluding helium, lithium and boron, at different ion fluences ranging from 1×1016 ions/cm2 to 1×1016 ions/cm2. The effect of varying the ion implantation energies ranging from 40 keV to 160keV were also investigated on samples implanted by helium ions. Finally lithium implanted samples was studied using the 488 nm and 514 nm Raman laser lines. Micro Raman spectroscopy (µ-RS) measurements indicated that indeed ion implantation induced a phase change to the h-BN, evident from the longitudinal optical (LO) peaks at wavenumbers 1298 cm−1 and 1304 cm−1 appearing in the spectra after implantation. The nature and extent of these new peaks, and their dependence on the different implantation parameters is discussed.",
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Aradi, E, Erasmus, RM, Naidoo, SR & Derry, TE 2011, Raman Characterization of the Phase Transition of Ion Implanted Hexagonal Boron Nitride to cubic Boron Nitride Nanoparticles. in I Basson & AE Botha (eds), Proceedings of the South African institute of Physics (2011). vol. 1, south African Institute of Physics, South Africa, 56th Annual Conference of the South African Institute of Physics, Gauteng, South Africa, 12/07/11.

Raman Characterization of the Phase Transition of Ion Implanted Hexagonal Boron Nitride to cubic Boron Nitride Nanoparticles. / Aradi, Emily; Erasmus, Rudolph M.; Naidoo, S. R.; Derry, Trevor E.

Proceedings of the South African institute of Physics (2011). ed. / Ilsa Basson; André E Botha. Vol. 1 South Africa : south African Institute of Physics, 2011.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Naidoo, S. R.

AU - Derry, Trevor E.

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N2 - We investigated the phase transition of hexagonal boron nitride (h-BN) to the c-BN form by the ion implantation process. Raman Spectroscopy was the major technique used in the characterization of the possible h-BN - c-BN phase transformation. The hexagonal BN samples were implanted with various ionsincluding helium, lithium and boron, at different ion fluences ranging from 1×1016 ions/cm2 to 1×1016 ions/cm2. The effect of varying the ion implantation energies ranging from 40 keV to 160keV were also investigated on samples implanted by helium ions. Finally lithium implanted samples was studied using the 488 nm and 514 nm Raman laser lines. Micro Raman spectroscopy (µ-RS) measurements indicated that indeed ion implantation induced a phase change to the h-BN, evident from the longitudinal optical (LO) peaks at wavenumbers 1298 cm−1 and 1304 cm−1 appearing in the spectra after implantation. The nature and extent of these new peaks, and their dependence on the different implantation parameters is discussed.

AB - We investigated the phase transition of hexagonal boron nitride (h-BN) to the c-BN form by the ion implantation process. Raman Spectroscopy was the major technique used in the characterization of the possible h-BN - c-BN phase transformation. The hexagonal BN samples were implanted with various ionsincluding helium, lithium and boron, at different ion fluences ranging from 1×1016 ions/cm2 to 1×1016 ions/cm2. The effect of varying the ion implantation energies ranging from 40 keV to 160keV were also investigated on samples implanted by helium ions. Finally lithium implanted samples was studied using the 488 nm and 514 nm Raman laser lines. Micro Raman spectroscopy (µ-RS) measurements indicated that indeed ion implantation induced a phase change to the h-BN, evident from the longitudinal optical (LO) peaks at wavenumbers 1298 cm−1 and 1304 cm−1 appearing in the spectra after implantation. The nature and extent of these new peaks, and their dependence on the different implantation parameters is discussed.

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Aradi E, Erasmus RM, Naidoo SR, Derry TE. Raman Characterization of the Phase Transition of Ion Implanted Hexagonal Boron Nitride to cubic Boron Nitride Nanoparticles. In Basson I, Botha AE, editors, Proceedings of the South African institute of Physics (2011). Vol. 1. South Africa: south African Institute of Physics. 2011