Raman studies on the effect of multiple-energy ion implantation on single-crystal hexagonal boron nitride

E. Aradi, S. R. Naidoo, R. M. Erasmus, B. Julies, T. E. Derry

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Single energy ion implantation of hexagonal boron nitride (h-BN) at various fluences and keV energies has shown that there is a change in the local symmetry of the crystal from hexagonal to the cubic (c-BN) symmetry. These conclusions have been primarily based on Raman scattering (RS) and Fourier transform infrared spectroscopy. Transmission electron microscopy (TEM) analyses have been a challenge because the sample preparation for cross-sectional study of both the polycrystalline substrates and single-crystal material used in the study presented problems that were difficult to circumvent. A multiple-energy implant with different fluence fractions has been used to create a uniform implanted layer in the material from the surface to the end of range of the implant in this study. We report on the initial RS studies on these samples.

Original languageEnglish
Pages (from-to)175-182
Number of pages8
JournalRadiation Effects and Defects in Solids
Volume170
Issue number3
Early online date18 Dec 2014
DOIs
Publication statusPublished - 4 Mar 2015
Externally publishedYes

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