Raman studies on the effect of multiple-energy ion implantation on single-crystal hexagonal boron nitride

E. Aradi, S. R. Naidoo, R. M. Erasmus, B. Julies, T. E. Derry

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Single energy ion implantation of hexagonal boron nitride (h-BN) at various fluences and keV energies has shown that there is a change in the local symmetry of the crystal from hexagonal to the cubic (c-BN) symmetry. These conclusions have been primarily based on Raman scattering (RS) and Fourier transform infrared spectroscopy. Transmission electron microscopy (TEM) analyses have been a challenge because the sample preparation for cross-sectional study of both the polycrystalline substrates and single-crystal material used in the study presented problems that were difficult to circumvent. A multiple-energy implant with different fluence fractions has been used to create a uniform implanted layer in the material from the surface to the end of range of the implant in this study. We report on the initial RS studies on these samples.

LanguageEnglish
Pages175-182
Number of pages8
JournalRadiation Effects and Defects in Solids
Volume170
Issue number3
Early online date18 Dec 2014
DOIs
Publication statusPublished - 4 Mar 2015
Externally publishedYes

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Boron nitride
boron nitrides
Ion implantation
ion implantation
Raman scattering
Single crystals
single crystals
fluence
Crystal symmetry
Raman spectra
Fourier transform infrared spectroscopy
symmetry
Transmission electron microscopy
Crystals
energy
Substrates
infrared spectroscopy
preparation
transmission electron microscopy
crystals

Cite this

Aradi, E. ; Naidoo, S. R. ; Erasmus, R. M. ; Julies, B. ; Derry, T. E. / Raman studies on the effect of multiple-energy ion implantation on single-crystal hexagonal boron nitride. In: Radiation Effects and Defects in Solids. 2015 ; Vol. 170, No. 3. pp. 175-182.
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Raman studies on the effect of multiple-energy ion implantation on single-crystal hexagonal boron nitride. / Aradi, E.; Naidoo, S. R.; Erasmus, R. M.; Julies, B.; Derry, T. E.

In: Radiation Effects and Defects in Solids, Vol. 170, No. 3, 04.03.2015, p. 175-182.

Research output: Contribution to journalArticle

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AU - Aradi, E.

AU - Naidoo, S. R.

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AU - Derry, T. E.

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AB - Single energy ion implantation of hexagonal boron nitride (h-BN) at various fluences and keV energies has shown that there is a change in the local symmetry of the crystal from hexagonal to the cubic (c-BN) symmetry. These conclusions have been primarily based on Raman scattering (RS) and Fourier transform infrared spectroscopy. Transmission electron microscopy (TEM) analyses have been a challenge because the sample preparation for cross-sectional study of both the polycrystalline substrates and single-crystal material used in the study presented problems that were difficult to circumvent. A multiple-energy implant with different fluence fractions has been used to create a uniform implanted layer in the material from the surface to the end of range of the implant in this study. We report on the initial RS studies on these samples.

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