Range and damage distributions in ultra-low energy boron implantation into silicon

N. Hatzopoulos; S. Suder; J. A. van den Berg; S. E. Donnelly; C. E.A. Cook; D. G. Armour; D. Panknin; W. Fukarek; M. Lucassen; L. Frey; M. A. Foad; J. G. England; S. Moffatt; P. Bailey; C. T. Noakes; Hideki Ohno

doi:10.1109/IIT.1996.586431

Range and damage distributions in ultra-low energy boron implantation into silicon

N. Hatzopoulos, S. Suder, J. A. van den Berg, S. E. Donnelly, C. E.A. Cook, D. G. Armour, D. Panknin, W. Fukarek, M. Lucassen, L. Frey, M. A. Foad, J. G. England, S. Moffatt, P. Bailey, C. T. Noakes, Hideki Ohno

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Citations (Scopus)

Abstract

An ultra high vacuum, low energy ion implanter was used in conjunction with a range of analytical techniques to study the range and damage distributions of B⁺ ions implanted at normal incidence into Si (100) samples held at room temperature. Samples were implanted over a dose range from 1E14 ions/cm² with and without a surface oxide layer and those implanted at 1 keV and below were capped with a nominal 20 nm layer of ²⁸Si by ion beam deposition in situ in order to produce an oxygen equilibration layer for subsequent secondary ion mass spectrometry depth profiling. The samples were analyzed using secondary ion mass spectroscopy, medium energy ion scattering, spectroscopic ellipsometry, spreading resistance profiling and high resolution, cross section transmission electron microscopy to obtain information on the range and damage distributions and junction depths. The general observations were that channelling occurs at all energies studied, and that the relationship between the damage and range distributions depends strongly on bombardment energy. Comparison of the range and damage profiles was carried out to ascertain the role of the surface in determining the behaviour of defects produced very close to it by the low energy implants required for the production of junctions at depths in the 20 to 50 nm range. The role of the surface or silicon/silicon dioxide interface as a defect sink significantly influences the B redistribution behaviour during rapid thermal annealing.

Original language	English
Title of host publication	Proceedings of International Conference on Ion Implantation Technology
Editors	Emi Ishidida, Sanjay Banerjee, Sandeep Mehta, T. C. Smith, Michael Current, Larry Larson, Al Tasch, Terry Romig
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	527-530
Number of pages	4
ISBN (Print)	078033289X
DOIs	https://doi.org/10.1109/IIT.1996.586431
Publication status	Published - 16 Jun 1996
Externally published	Yes
Event	11th International Conference on Ion Implantation Technology - Austin, United States Duration: 16 Jun 1996 → 21 Jun 1996 Conference number: 11

Conference

Conference	11th International Conference on Ion Implantation Technology
Country/Territory	United States
City	Austin
Period	16/06/96 → 21/06/96

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Hatzopoulos, N., Suder, S., van den Berg, J. A., Donnelly, S. E., Cook, C. E. A., Armour, D. G., Panknin, D., Fukarek, W., Lucassen, M., Frey, L., Foad, M. A., England, J. G., Moffatt, S., Bailey, P., Noakes, C. T., & Ohno, H. (1996). Range and damage distributions in ultra-low energy boron implantation into silicon. In E. Ishidida, S. Banerjee, S. Mehta, T. C. Smith, M. Current, L. Larson, A. Tasch, & T. Romig (Eds.), Proceedings of International Conference on Ion Implantation Technology (pp. 527-530). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIT.1996.586431

Hatzopoulos, N. ; Suder, S. ; van den Berg, J. A. et al. / Range and damage distributions in ultra-low energy boron implantation into silicon. Proceedings of International Conference on Ion Implantation Technology. editor / Emi Ishidida ; Sanjay Banerjee ; Sandeep Mehta ; T. C. Smith ; Michael Current ; Larry Larson ; Al Tasch ; Terry Romig. Institute of Electrical and Electronics Engineers Inc., 1996. pp. 527-530

@inproceedings{ef6c0f6c2b2a48d2903a38a6453f03c2,

title = "Range and damage distributions in ultra-low energy boron implantation into silicon",

abstract = "An ultra high vacuum, low energy ion implanter was used in conjunction with a range of analytical techniques to study the range and damage distributions of B+ ions implanted at normal incidence into Si (100) samples held at room temperature. Samples were implanted over a dose range from 1E14 ions/cm2 with and without a surface oxide layer and those implanted at 1 keV and below were capped with a nominal 20 nm layer of 28Si by ion beam deposition in situ in order to produce an oxygen equilibration layer for subsequent secondary ion mass spectrometry depth profiling. The samples were analyzed using secondary ion mass spectroscopy, medium energy ion scattering, spectroscopic ellipsometry, spreading resistance profiling and high resolution, cross section transmission electron microscopy to obtain information on the range and damage distributions and junction depths. The general observations were that channelling occurs at all energies studied, and that the relationship between the damage and range distributions depends strongly on bombardment energy. Comparison of the range and damage profiles was carried out to ascertain the role of the surface in determining the behaviour of defects produced very close to it by the low energy implants required for the production of junctions at depths in the 20 to 50 nm range. The role of the surface or silicon/silicon dioxide interface as a defect sink significantly influences the B redistribution behaviour during rapid thermal annealing.",

keywords = "Boron, Mass spectroscopy, Elementary particle vacuum, Vacuum technology, Temperature distribution, Ion beams, Scattering, Ellipsometry, Energy resolution, Electrons",

author = "N. Hatzopoulos and S. Suder and {van den Berg}, {J. A.} and Donnelly, {S. E.} and Cook, {C. E.A.} and Armour, {D. G.} and D. Panknin and W. Fukarek and M. Lucassen and L. Frey and Foad, {M. A.} and England, {J. G.} and S. Moffatt and P. Bailey and Noakes, {C. T.} and Hideki Ohno",

year = "1996",

month = jun,

day = "16",

doi = "10.1109/IIT.1996.586431",

language = "English",

isbn = "078033289X",

pages = "527--530",

editor = "Emi Ishidida and Sanjay Banerjee and Sandeep Mehta and Smith, {T. C.} and Michael Current and Larry Larson and Al Tasch and Terry Romig",

booktitle = "Proceedings of International Conference on Ion Implantation Technology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "11th International Conference on Ion Implantation Technology ; Conference date: 16-06-1996 Through 21-06-1996",

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Hatzopoulos, N, Suder, S, van den Berg, JA, Donnelly, SE, Cook, CEA, Armour, DG, Panknin, D, Fukarek, W, Lucassen, M, Frey, L, Foad, MA, England, JG, Moffatt, S, Bailey, P, Noakes, CT & Ohno, H 1996, Range and damage distributions in ultra-low energy boron implantation into silicon. in E Ishidida, S Banerjee, S Mehta, TC Smith, M Current, L Larson, A Tasch & T Romig (eds), Proceedings of International Conference on Ion Implantation Technology. Institute of Electrical and Electronics Engineers Inc., pp. 527-530, 11th International Conference on Ion Implantation Technology, Austin, Texas, United States, 16/06/96. https://doi.org/10.1109/IIT.1996.586431

Range and damage distributions in ultra-low energy boron implantation into silicon. / Hatzopoulos, N.; Suder, S.; van den Berg, J. A. et al.

Proceedings of International Conference on Ion Implantation Technology. ed. / Emi Ishidida; Sanjay Banerjee; Sandeep Mehta; T. C. Smith; Michael Current; Larry Larson; Al Tasch; Terry Romig. Institute of Electrical and Electronics Engineers Inc., 1996. p. 527-530.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Range and damage distributions in ultra-low energy boron implantation into silicon

AU - Hatzopoulos, N.

AU - Suder, S.

AU - van den Berg, J. A.

AU - Donnelly, S. E.

AU - Cook, C. E.A.

AU - Armour, D. G.

AU - Panknin, D.

AU - Fukarek, W.

AU - Lucassen, M.

AU - Frey, L.

AU - Foad, M. A.

AU - England, J. G.

AU - Moffatt, S.

AU - Bailey, P.

AU - Noakes, C. T.

AU - Ohno, Hideki

N1 - Conference code: 11

PY - 1996/6/16

Y1 - 1996/6/16

N2 - An ultra high vacuum, low energy ion implanter was used in conjunction with a range of analytical techniques to study the range and damage distributions of B+ ions implanted at normal incidence into Si (100) samples held at room temperature. Samples were implanted over a dose range from 1E14 ions/cm2 with and without a surface oxide layer and those implanted at 1 keV and below were capped with a nominal 20 nm layer of 28Si by ion beam deposition in situ in order to produce an oxygen equilibration layer for subsequent secondary ion mass spectrometry depth profiling. The samples were analyzed using secondary ion mass spectroscopy, medium energy ion scattering, spectroscopic ellipsometry, spreading resistance profiling and high resolution, cross section transmission electron microscopy to obtain information on the range and damage distributions and junction depths. The general observations were that channelling occurs at all energies studied, and that the relationship between the damage and range distributions depends strongly on bombardment energy. Comparison of the range and damage profiles was carried out to ascertain the role of the surface in determining the behaviour of defects produced very close to it by the low energy implants required for the production of junctions at depths in the 20 to 50 nm range. The role of the surface or silicon/silicon dioxide interface as a defect sink significantly influences the B redistribution behaviour during rapid thermal annealing.

AB - An ultra high vacuum, low energy ion implanter was used in conjunction with a range of analytical techniques to study the range and damage distributions of B+ ions implanted at normal incidence into Si (100) samples held at room temperature. Samples were implanted over a dose range from 1E14 ions/cm2 with and without a surface oxide layer and those implanted at 1 keV and below were capped with a nominal 20 nm layer of 28Si by ion beam deposition in situ in order to produce an oxygen equilibration layer for subsequent secondary ion mass spectrometry depth profiling. The samples were analyzed using secondary ion mass spectroscopy, medium energy ion scattering, spectroscopic ellipsometry, spreading resistance profiling and high resolution, cross section transmission electron microscopy to obtain information on the range and damage distributions and junction depths. The general observations were that channelling occurs at all energies studied, and that the relationship between the damage and range distributions depends strongly on bombardment energy. Comparison of the range and damage profiles was carried out to ascertain the role of the surface in determining the behaviour of defects produced very close to it by the low energy implants required for the production of junctions at depths in the 20 to 50 nm range. The role of the surface or silicon/silicon dioxide interface as a defect sink significantly influences the B redistribution behaviour during rapid thermal annealing.

KW - Boron

KW - Mass spectroscopy

KW - Elementary particle vacuum

KW - Vacuum technology

KW - Temperature distribution

KW - Ion beams

KW - Scattering

KW - Ellipsometry

KW - Energy resolution

KW - Electrons

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U2 - 10.1109/IIT.1996.586431

DO - 10.1109/IIT.1996.586431

M3 - Conference contribution

AN - SCOPUS:0030348978

SN - 078033289X

SP - 527

EP - 530

BT - Proceedings of International Conference on Ion Implantation Technology

A2 - Ishidida, Emi

A2 - Banerjee, Sanjay

A2 - Mehta, Sandeep

A2 - Smith, T. C.

A2 - Current, Michael

A2 - Larson, Larry

A2 - Tasch, Al

A2 - Romig, Terry

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 11th International Conference on Ion Implantation Technology

Y2 - 16 June 1996 through 21 June 1996

ER -

Hatzopoulos N, Suder S, van den Berg JA, Donnelly SE, Cook CEA, Armour DG et al. Range and damage distributions in ultra-low energy boron implantation into silicon. In Ishidida E, Banerjee S, Mehta S, Smith TC, Current M, Larson L, Tasch A, Romig T, editors, Proceedings of International Conference on Ion Implantation Technology. Institute of Electrical and Electronics Engineers Inc. 1996. p. 527-530 doi: 10.1109/IIT.1996.586431

Range and damage distributions in ultra-low energy boron implantation into silicon

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