Rapid and damage-free outgassing of implanted helium from amorphous silicon oxycarbide

Qing Su; Hepeng Ding; Lloyd Price; Lin Shao; Jonathan A. Hinks; Graeme Greaves; Stephen E. Donnelly; Michael J. Demkowicz; Michael Nastasi

doi:10.1038/s41598-018-23426-y

Rapid and damage-free outgassing of implanted helium from amorphous silicon oxycarbide

Qing Su, Hepeng Ding, Lloyd Price, Lin Shao, Jonathan A. Hinks, Graeme Greaves, Stephen E. Donnelly, Michael J. Demkowicz, Michael Nastasi

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Damage caused by implanted helium (He) is a major concern for material performance in future nuclear reactors. We use a combination of experiments and modeling to demonstrate that amorphous silicon oxycarbide (SiOC) is immune to He-induced damage. By contrast with other solids, where implanted He becomes immobilized in nanometer-scale precipitates, He in SiOC remains in solution and outgasses from the material via atomic-scale diffusion without damaging its free surfaces. Furthermore, the behavior of He in SiOC is not sensitive to the exact concentration of carbon and hydrogen in this material, indicating that the composition of SiOC may be tuned to optimize other properties without compromising resistance to implanted He.

Original language	English
Article number	5009
Number of pages	9
Journal	Scientific Reports
Volume	8
Early online date	22 Mar 2018
DOIs	https://doi.org/10.1038/s41598-018-23426-y
Publication status	Published - 1 Dec 2018

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abstract = "Damage caused by implanted helium (He) is a major concern for material performance in future nuclear reactors. We use a combination of experiments and modeling to demonstrate that amorphous silicon oxycarbide (SiOC) is immune to He-induced damage. By contrast with other solids, where implanted He becomes immobilized in nanometer-scale precipitates, He in SiOC remains in solution and outgasses from the material via atomic-scale diffusion without damaging its free surfaces. Furthermore, the behavior of He in SiOC is not sensitive to the exact concentration of carbon and hydrogen in this material, indicating that the composition of SiOC may be tuned to optimize other properties without compromising resistance to implanted He.",

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AU - Su, Qing

AU - Ding, Hepeng

AU - Price, Lloyd

AU - Shao, Lin

AU - Hinks, Jonathan A.

AU - Greaves, Graeme

AU - Donnelly, Stephen E.

AU - Demkowicz, Michael J.

AU - Nastasi, Michael

PY - 2018/12/1

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N2 - Damage caused by implanted helium (He) is a major concern for material performance in future nuclear reactors. We use a combination of experiments and modeling to demonstrate that amorphous silicon oxycarbide (SiOC) is immune to He-induced damage. By contrast with other solids, where implanted He becomes immobilized in nanometer-scale precipitates, He in SiOC remains in solution and outgasses from the material via atomic-scale diffusion without damaging its free surfaces. Furthermore, the behavior of He in SiOC is not sensitive to the exact concentration of carbon and hydrogen in this material, indicating that the composition of SiOC may be tuned to optimize other properties without compromising resistance to implanted He.

AB - Damage caused by implanted helium (He) is a major concern for material performance in future nuclear reactors. We use a combination of experiments and modeling to demonstrate that amorphous silicon oxycarbide (SiOC) is immune to He-induced damage. By contrast with other solids, where implanted He becomes immobilized in nanometer-scale precipitates, He in SiOC remains in solution and outgasses from the material via atomic-scale diffusion without damaging its free surfaces. Furthermore, the behavior of He in SiOC is not sensitive to the exact concentration of carbon and hydrogen in this material, indicating that the composition of SiOC may be tuned to optimize other properties without compromising resistance to implanted He.

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JF - Scientific Reports

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ER -

Rapid and damage-free outgassing of implanted helium from amorphous silicon oxycarbide

Abstract

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