Recent developments in nuclear methods in support of semiconductor characterization

B. Brijs; H. Bender; C. Huyghebaert; T. Janssens; W. Vandervorst; K. Nakajima; K. Kimura; A. Bergmaier; G. Dollinger; J. A. Van den Berg

Recent developments in nuclear methods in support of semiconductor characterization

B. Brijs, H. Bender, C. Huyghebaert, T. Janssens, W. Vandervorst, K. Nakajima, K. Kimura, A. Bergmaier, G. Dollinger, J. A. Van den Berg

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The analysis of thin materials related to semiconductors using nuclear techniques was presented. Decreasing the beam energy from the conventional energy of 2 MeV to lower than 0.5 MeV or lower transforms rutherford backscattering (RBS) to a near surface analysis technique. It was concluded that problems of material characterization could be solved using secondary ion mass spectrometry (SIMS) and dedicated nuclear techniques that provide good insight in the material behavior in shallow layers.

Original language	English
Title of host publication	Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes
Subtitle of host publication	Joint Proceedings of the Symposia on: ALTECH 2003, Analytical Techniques for Semiconductor Materials and Process Characterization IV, Paris, France and The 202nd Meeting of the Electrochemical Society, Diagnostic Techniques for Semiconductor Materials and Devices VI, Salt Lake City, Utah
Editors	Bernd O. Kolbesen, Cor Claeys, Peter Stallhofer, Francois Tardif, Dieter K. Schroder, Thomas J. Shaffner, Michio Tajima, P. Rai-Choudhury
Publisher	The Electrochemical Society
Pages	50-62
Number of pages	13
ISBN (Print)	9781566773485, 081949997, 1566773482
Publication status	Published - 2003
Externally published	Yes
Event	Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes - Salt Lake City, United States Duration: 21 Oct 2002 → 25 Oct 2002 https://www.tib.eu/en/search/id/BLCP%3ACN048933622/Recent-Developments-in-Nuclear-Methods-in-Support/

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	SPIE
Volume	5133
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes
Country/Territory	United States
City	Salt Lake City
Period	21/10/02 → 25/10/02
Internet address	https://www.tib.eu/en/search/id/BLCP%3ACN048933622/Recent-Developments-in-Nuclear-Methods-in-Support/

Cite this

Brijs, B., Bender, H., Huyghebaert, C., Janssens, T., Vandervorst, W., Nakajima, K., Kimura, K., Bergmaier, A., Dollinger, G., & Van den Berg, J. A. (2003). Recent developments in nuclear methods in support of semiconductor characterization. In B. O. Kolbesen, C. Claeys, P. Stallhofer, F. Tardif, D. K. Schroder, T. J. Shaffner, M. Tajima, & P. Rai-Choudhury (Eds.), Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes: Joint Proceedings of the Symposia on: ALTECH 2003, Analytical Techniques for Semiconductor Materials and Process Characterization IV, Paris, France and The 202nd Meeting of the Electrochemical Society, Diagnostic Techniques for Semiconductor Materials and Devices VI, Salt Lake City, Utah (pp. 50-62). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 5133). The Electrochemical Society.

Brijs, B. ; Bender, H. ; Huyghebaert, C. et al. / Recent developments in nuclear methods in support of semiconductor characterization. Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes: Joint Proceedings of the Symposia on: ALTECH 2003, Analytical Techniques for Semiconductor Materials and Process Characterization IV, Paris, France and The 202nd Meeting of the Electrochemical Society, Diagnostic Techniques for Semiconductor Materials and Devices VI, Salt Lake City, Utah. editor / Bernd O. Kolbesen ; Cor Claeys ; Peter Stallhofer ; Francois Tardif ; Dieter K. Schroder ; Thomas J. Shaffner ; Michio Tajima ; P. Rai-Choudhury. The Electrochemical Society, 2003. pp. 50-62 (Proceedings of SPIE - The International Society for Optical Engineering).

@inproceedings{82db7f3147d24cdeb94a5c20a3e2e4ab,

title = "Recent developments in nuclear methods in support of semiconductor characterization",

abstract = "The analysis of thin materials related to semiconductors using nuclear techniques was presented. Decreasing the beam energy from the conventional energy of 2 MeV to lower than 0.5 MeV or lower transforms rutherford backscattering (RBS) to a near surface analysis technique. It was concluded that problems of material characterization could be solved using secondary ion mass spectrometry (SIMS) and dedicated nuclear techniques that provide good insight in the material behavior in shallow layers.",

keywords = "Dosimetry, Ion implantation, Radiation damage, Rutherford backscattering spectroscopy, Secondary ion mass spectrometry, Semiconductor materials, Sputtering, Thin films, Semiconductor device manufacture",

author = "B. Brijs and H. Bender and C. Huyghebaert and T. Janssens and W. Vandervorst and K. Nakajima and K. Kimura and A. Bergmaier and G. Dollinger and {Van den Berg}, {J. A.}",

year = "2003",

language = "English",

isbn = "9781566773485",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "The Electrochemical Society",

pages = "50--62",

editor = "Kolbesen, {Bernd O.} and Cor Claeys and Peter Stallhofer and Francois Tardif and Schroder, {Dieter K.} and Shaffner, {Thomas J.} and Michio Tajima and P. Rai-Choudhury",

booktitle = "Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes",

address = "United States",

note = "Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes ; Conference date: 21-10-2002 Through 25-10-2002",

url = "https://www.tib.eu/en/search/id/BLCP%3ACN048933622/Recent-Developments-in-Nuclear-Methods-in-Support/",

}

Brijs, B, Bender, H, Huyghebaert, C, Janssens, T, Vandervorst, W, Nakajima, K, Kimura, K, Bergmaier, A, Dollinger, G & Van den Berg, JA 2003, Recent developments in nuclear methods in support of semiconductor characterization. in BO Kolbesen, C Claeys, P Stallhofer, F Tardif, DK Schroder, TJ Shaffner, M Tajima & P Rai-Choudhury (eds), Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes: Joint Proceedings of the Symposia on: ALTECH 2003, Analytical Techniques for Semiconductor Materials and Process Characterization IV, Paris, France and The 202nd Meeting of the Electrochemical Society, Diagnostic Techniques for Semiconductor Materials and Devices VI, Salt Lake City, Utah. Proceedings of SPIE - The International Society for Optical Engineering, vol. 5133, The Electrochemical Society, pp. 50-62, Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes, Salt Lake City, Utah, United States, 21/10/02.

Recent developments in nuclear methods in support of semiconductor characterization. / Brijs, B.; Bender, H.; Huyghebaert, C. et al.

Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes: Joint Proceedings of the Symposia on: ALTECH 2003, Analytical Techniques for Semiconductor Materials and Process Characterization IV, Paris, France and The 202nd Meeting of the Electrochemical Society, Diagnostic Techniques for Semiconductor Materials and Devices VI, Salt Lake City, Utah. ed. / Bernd O. Kolbesen; Cor Claeys; Peter Stallhofer; Francois Tardif; Dieter K. Schroder; Thomas J. Shaffner; Michio Tajima; P. Rai-Choudhury. The Electrochemical Society, 2003. p. 50-62 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 5133).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Recent developments in nuclear methods in support of semiconductor characterization

AU - Brijs, B.

AU - Bender, H.

AU - Huyghebaert, C.

AU - Janssens, T.

AU - Vandervorst, W.

AU - Nakajima, K.

AU - Kimura, K.

AU - Bergmaier, A.

AU - Dollinger, G.

AU - Van den Berg, J. A.

PY - 2003

Y1 - 2003

N2 - The analysis of thin materials related to semiconductors using nuclear techniques was presented. Decreasing the beam energy from the conventional energy of 2 MeV to lower than 0.5 MeV or lower transforms rutherford backscattering (RBS) to a near surface analysis technique. It was concluded that problems of material characterization could be solved using secondary ion mass spectrometry (SIMS) and dedicated nuclear techniques that provide good insight in the material behavior in shallow layers.

AB - The analysis of thin materials related to semiconductors using nuclear techniques was presented. Decreasing the beam energy from the conventional energy of 2 MeV to lower than 0.5 MeV or lower transforms rutherford backscattering (RBS) to a near surface analysis technique. It was concluded that problems of material characterization could be solved using secondary ion mass spectrometry (SIMS) and dedicated nuclear techniques that provide good insight in the material behavior in shallow layers.

KW - Dosimetry

KW - Ion implantation

KW - Radiation damage

KW - Rutherford backscattering spectroscopy

KW - Secondary ion mass spectrometry

KW - Semiconductor materials

KW - Sputtering

KW - Thin films

KW - Semiconductor device manufacture

UR - http://www.scopus.com/inward/record.url?scp=0242497089&partnerID=8YFLogxK

UR - https://www.tib.eu/en/search/id/BLCP%3ACN048933622/Recent-Developments-in-Nuclear-Methods-in-Support/

M3 - Conference contribution

AN - SCOPUS:0242497089

SN - 9781566773485

SN - 081949997

SN - 1566773482

T3 - Proceedings of SPIE - The International Society for Optical Engineering

SP - 50

EP - 62

BT - Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes

A2 - Kolbesen, Bernd O.

A2 - Claeys, Cor

A2 - Stallhofer, Peter

A2 - Tardif, Francois

A2 - Schroder, Dieter K.

A2 - Shaffner, Thomas J.

A2 - Tajima, Michio

A2 - Rai-Choudhury, P.

PB - The Electrochemical Society

T2 - Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes

Y2 - 21 October 2002 through 25 October 2002

ER -

Brijs B, Bender H, Huyghebaert C, Janssens T, Vandervorst W, Nakajima K et al. Recent developments in nuclear methods in support of semiconductor characterization. In Kolbesen BO, Claeys C, Stallhofer P, Tardif F, Schroder DK, Shaffner TJ, Tajima M, Rai-Choudhury P, editors, Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes: Joint Proceedings of the Symposia on: ALTECH 2003, Analytical Techniques for Semiconductor Materials and Process Characterization IV, Paris, France and The 202nd Meeting of the Electrochemical Society, Diagnostic Techniques for Semiconductor Materials and Devices VI, Salt Lake City, Utah. The Electrochemical Society. 2003. p. 50-62. (Proceedings of SPIE - The International Society for Optical Engineering).

Recent developments in nuclear methods in support of semiconductor characterization

Abstract

Publication series

Conference

Other files and links

Fingerprint

Cite this