Relationship between carrier dynamics and temperature in terahertz quantum cascade structures: Simulation of GaAs/AlGaAs, SiGe/Si and GaN/AlGaN devices
D. Indjin, Z. Ikonić, V. D. Jovanović, N. Vukmirović, P. Harrison, R. W. Kelsall
Research output: Contribution to journal › Article › peer-review
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