Room temperature operation of AlGaN/GaN quantum well infrared photodetectors at a 3-4 νm wavelength range

Ben Sherliker; Matthew Halsall; Irmantas Kasalynas; Dalius Seliuta; Gintaras Valusis; Mikas Vengris; Martynas Barkauskas; Valdas Sirutkaitis; P. Harrison; V. D. Jovanovic; D. Indjin; Z. Ikonic; P. J. Parbrook; T. Wang; P. D. Buckle

doi:10.1088/0268-1242/22/11/010

Room temperature operation of AlGaN/GaN quantum well infrared photodetectors at a 3-4 νm wavelength range

Ben Sherliker, Matthew Halsall, Irmantas Kasalynas, Dalius Seliuta, Gintaras Valusis, Mikas Vengris, Martynas Barkauskas, Valdas Sirutkaitis, P. Harrison, V. D. Jovanovic, D. Indjin, Z. Ikonic, P. J. Parbrook, T. Wang, P. D. Buckle

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13 Citations (Scopus)

Abstract

Experimental results showing room temperature normal incidence mid-infrared detection by AlGaN/GaN quantum well infrared photodetectors are presented. Designed structures have intersubband transitions corresponding to wavelengths in the region of 3 and 4 νm, where strong absorption in a sapphire substrate dominates. The intersubband spectra, therefore, were characterized by electronic Raman scattering and infrared photocurrent spectroscopy. The absorption spectra agree well with theoretical predictions. Details of device fabrication are presented with sensitivity estimates for the devices.

Original language	English
Pages (from-to)	1240-1244
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	22
Issue number	11
Early online date	15 Oct 2007
DOIs	https://doi.org/10.1088/0268-1242/22/11/010
Publication status	Published - 1 Nov 2007
Externally published	Yes

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Sherliker, B., Halsall, M., Kasalynas, I., Seliuta, D., Valusis, G., Vengris, M., Barkauskas, M., Sirutkaitis, V., Harrison, P., Jovanovic, V. D., Indjin, D., Ikonic, Z., Parbrook, P. J., Wang, T., & Buckle, P. D. (2007). Room temperature operation of AlGaN/GaN quantum well infrared photodetectors at a 3-4 νm wavelength range. Semiconductor Science and Technology, 22(11), 1240-1244. https://doi.org/10.1088/0268-1242/22/11/010

@article{a4c6a7baf39441a2a42eec5e9ab88b6a,

title = "Room temperature operation of AlGaN/GaN quantum well infrared photodetectors at a 3-4 νm wavelength range",

abstract = "Experimental results showing room temperature normal incidence mid-infrared detection by AlGaN/GaN quantum well infrared photodetectors are presented. Designed structures have intersubband transitions corresponding to wavelengths in the region of 3 and 4 νm, where strong absorption in a sapphire substrate dominates. The intersubband spectra, therefore, were characterized by electronic Raman scattering and infrared photocurrent spectroscopy. The absorption spectra agree well with theoretical predictions. Details of device fabrication are presented with sensitivity estimates for the devices.",

keywords = "Absorption spectra, Infrared detectors, Photocurrents, Raman scattering, Sapphire, Sensitivity analysis, Wavelength",

author = "Ben Sherliker and Matthew Halsall and Irmantas Kasalynas and Dalius Seliuta and Gintaras Valusis and Mikas Vengris and Martynas Barkauskas and Valdas Sirutkaitis and P. Harrison and Jovanovic, {V. D.} and D. Indjin and Z. Ikonic and Parbrook, {P. J.} and T. Wang and Buckle, {P. D.}",

year = "2007",

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doi = "10.1088/0268-1242/22/11/010",

language = "English",

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Sherliker, B, Halsall, M, Kasalynas, I, Seliuta, D, Valusis, G, Vengris, M, Barkauskas, M, Sirutkaitis, V, Harrison, P, Jovanovic, VD, Indjin, D, Ikonic, Z, Parbrook, PJ, Wang, T & Buckle, PD 2007, 'Room temperature operation of AlGaN/GaN quantum well infrared photodetectors at a 3-4 νm wavelength range', Semiconductor Science and Technology, vol. 22, no. 11, pp. 1240-1244. https://doi.org/10.1088/0268-1242/22/11/010

TY - JOUR

T1 - Room temperature operation of AlGaN/GaN quantum well infrared photodetectors at a 3-4 νm wavelength range

AU - Sherliker, Ben

AU - Halsall, Matthew

AU - Kasalynas, Irmantas

AU - Seliuta, Dalius

AU - Valusis, Gintaras

AU - Vengris, Mikas

AU - Barkauskas, Martynas

AU - Sirutkaitis, Valdas

AU - Harrison, P.

AU - Jovanovic, V. D.

AU - Indjin, D.

AU - Ikonic, Z.

AU - Parbrook, P. J.

AU - Wang, T.

AU - Buckle, P. D.

PY - 2007/11/1

Y1 - 2007/11/1

N2 - Experimental results showing room temperature normal incidence mid-infrared detection by AlGaN/GaN quantum well infrared photodetectors are presented. Designed structures have intersubband transitions corresponding to wavelengths in the region of 3 and 4 νm, where strong absorption in a sapphire substrate dominates. The intersubband spectra, therefore, were characterized by electronic Raman scattering and infrared photocurrent spectroscopy. The absorption spectra agree well with theoretical predictions. Details of device fabrication are presented with sensitivity estimates for the devices.

AB - Experimental results showing room temperature normal incidence mid-infrared detection by AlGaN/GaN quantum well infrared photodetectors are presented. Designed structures have intersubband transitions corresponding to wavelengths in the region of 3 and 4 νm, where strong absorption in a sapphire substrate dominates. The intersubband spectra, therefore, were characterized by electronic Raman scattering and infrared photocurrent spectroscopy. The absorption spectra agree well with theoretical predictions. Details of device fabrication are presented with sensitivity estimates for the devices.

KW - Absorption spectra

KW - Infrared detectors

KW - Photocurrents

KW - Raman scattering

KW - Sapphire

KW - Sensitivity analysis

KW - Wavelength

UR - http://www.scopus.com/inward/record.url?scp=35649004458&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/22/11/010

DO - 10.1088/0268-1242/22/11/010

M3 - Article

AN - SCOPUS:35649004458

VL - 22

SP - 1240

EP - 1244

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 11

ER -

Room temperature operation of AlGaN/GaN quantum well infrared photodetectors at a 3-4 νm wavelength range

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