Room temperature operation of AlGaN/GaN quantum well infrared photodetectors at a 3-4 νm wavelength range

Ben Sherliker, Matthew Halsall, Irmantas Kasalynas, Dalius Seliuta, Gintaras Valusis, Mikas Vengris, Martynas Barkauskas, Valdas Sirutkaitis, P. Harrison, V. D. Jovanovic, D. Indjin, Z. Ikonic, P. J. Parbrook, T. Wang, P. D. Buckle

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

Experimental results showing room temperature normal incidence mid-infrared detection by AlGaN/GaN quantum well infrared photodetectors are presented. Designed structures have intersubband transitions corresponding to wavelengths in the region of 3 and 4 νm, where strong absorption in a sapphire substrate dominates. The intersubband spectra, therefore, were characterized by electronic Raman scattering and infrared photocurrent spectroscopy. The absorption spectra agree well with theoretical predictions. Details of device fabrication are presented with sensitivity estimates for the devices.

Original languageEnglish
Pages (from-to)1240-1244
Number of pages5
JournalSemiconductor Science and Technology
Volume22
Issue number11
Early online date15 Oct 2007
DOIs
Publication statusPublished - 1 Nov 2007
Externally publishedYes

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