Abstract
Experimental studies of 10-40-keV (Formula presented) ion bombardment of Si at polar incidence angles between 0° and 45° to the surface normal at temperatures between 100 and 300 K show little roughening for near normal incidence but ripple production for 45° incidence. It is shown that inclusion of the directed flux of atoms parallel to the surface and generated by ion bombardment in a stochastic differential equation description of the dynamics of surface evolution during sputtering erosion can induce smoothing for near-normal ion incidence. For oblique incidence, roughening and ripple production occurs with a late stage dynamics dictated by the competition between curvature-dependent sputtering processes and surface relaxation (which is also, probably, irradiation motivated), gradient-dependent sputtering, and other higher-order effects.
| Original language | English |
|---|---|
| Pages (from-to) | 17647-17653 |
| Number of pages | 7 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 54 |
| Issue number | 24 |
| DOIs | |
| Publication status | Published - 15 Dec 1996 |
| Externally published | Yes |