Roughening and ripple instabilities on ion-bombarded Si

G. Carter, V. Vishnyakov

Research output: Contribution to journalArticle

376 Citations (Scopus)

Abstract

Experimental studies of 10-40-keV (Formula presented) ion bombardment of Si at polar incidence angles between 0° and 45° to the surface normal at temperatures between 100 and 300 K show little roughening for near normal incidence but ripple production for 45° incidence. It is shown that inclusion of the directed flux of atoms parallel to the surface and generated by ion bombardment in a stochastic differential equation description of the dynamics of surface evolution during sputtering erosion can induce smoothing for near-normal ion incidence. For oblique incidence, roughening and ripple production occurs with a late stage dynamics dictated by the competition between curvature-dependent sputtering processes and surface relaxation (which is also, probably, irradiation motivated), gradient-dependent sputtering, and other higher-order effects.

Original languageEnglish
Pages (from-to)17647-17653
Number of pages7
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume54
Issue number24
DOIs
Publication statusPublished - 15 Dec 1996
Externally publishedYes

Fingerprint

ripples
Sputtering
incidence
Ions
Ion bombardment
Surface relaxation
sputtering
ions
bombardment
Erosion
Differential equations
Irradiation
Fluxes
Atoms
smoothing
erosion
differential equations
curvature
inclusions
gradients

Cite this

@article{734fef093c834772bd21cd04dea43ac2,
title = "Roughening and ripple instabilities on ion-bombarded Si",
abstract = "Experimental studies of 10-40-keV (Formula presented) ion bombardment of Si at polar incidence angles between 0° and 45° to the surface normal at temperatures between 100 and 300 K show little roughening for near normal incidence but ripple production for 45° incidence. It is shown that inclusion of the directed flux of atoms parallel to the surface and generated by ion bombardment in a stochastic differential equation description of the dynamics of surface evolution during sputtering erosion can induce smoothing for near-normal ion incidence. For oblique incidence, roughening and ripple production occurs with a late stage dynamics dictated by the competition between curvature-dependent sputtering processes and surface relaxation (which is also, probably, irradiation motivated), gradient-dependent sputtering, and other higher-order effects.",
author = "G. Carter and V. Vishnyakov",
year = "1996",
month = "12",
day = "15",
doi = "10.1103/PhysRevB.54.17647",
language = "English",
volume = "54",
pages = "17647--17653",
journal = "Physical Review B - Condensed Matter and Materials Physics",
issn = "1098-0121",
publisher = "American Physical Society",
number = "24",

}

Roughening and ripple instabilities on ion-bombarded Si. / Carter, G.; Vishnyakov, V.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 54, No. 24, 15.12.1996, p. 17647-17653.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Roughening and ripple instabilities on ion-bombarded Si

AU - Carter, G.

AU - Vishnyakov, V.

PY - 1996/12/15

Y1 - 1996/12/15

N2 - Experimental studies of 10-40-keV (Formula presented) ion bombardment of Si at polar incidence angles between 0° and 45° to the surface normal at temperatures between 100 and 300 K show little roughening for near normal incidence but ripple production for 45° incidence. It is shown that inclusion of the directed flux of atoms parallel to the surface and generated by ion bombardment in a stochastic differential equation description of the dynamics of surface evolution during sputtering erosion can induce smoothing for near-normal ion incidence. For oblique incidence, roughening and ripple production occurs with a late stage dynamics dictated by the competition between curvature-dependent sputtering processes and surface relaxation (which is also, probably, irradiation motivated), gradient-dependent sputtering, and other higher-order effects.

AB - Experimental studies of 10-40-keV (Formula presented) ion bombardment of Si at polar incidence angles between 0° and 45° to the surface normal at temperatures between 100 and 300 K show little roughening for near normal incidence but ripple production for 45° incidence. It is shown that inclusion of the directed flux of atoms parallel to the surface and generated by ion bombardment in a stochastic differential equation description of the dynamics of surface evolution during sputtering erosion can induce smoothing for near-normal ion incidence. For oblique incidence, roughening and ripple production occurs with a late stage dynamics dictated by the competition between curvature-dependent sputtering processes and surface relaxation (which is also, probably, irradiation motivated), gradient-dependent sputtering, and other higher-order effects.

UR - http://www.scopus.com/inward/record.url?scp=0000226696&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.54.17647

DO - 10.1103/PhysRevB.54.17647

M3 - Article

VL - 54

SP - 17647

EP - 17653

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

SN - 1098-0121

IS - 24

ER -