Roughening and ripple instabilities on ion-bombarded Si

G. Carter, V. Vishnyakov

Research output: Contribution to journalArticle

383 Citations (Scopus)

Abstract

Experimental studies of 10-40-keV (Formula presented) ion bombardment of Si at polar incidence angles between 0° and 45° to the surface normal at temperatures between 100 and 300 K show little roughening for near normal incidence but ripple production for 45° incidence. It is shown that inclusion of the directed flux of atoms parallel to the surface and generated by ion bombardment in a stochastic differential equation description of the dynamics of surface evolution during sputtering erosion can induce smoothing for near-normal ion incidence. For oblique incidence, roughening and ripple production occurs with a late stage dynamics dictated by the competition between curvature-dependent sputtering processes and surface relaxation (which is also, probably, irradiation motivated), gradient-dependent sputtering, and other higher-order effects.

Original languageEnglish
Pages (from-to)17647-17653
Number of pages7
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume54
Issue number24
DOIs
Publication statusPublished - 15 Dec 1996
Externally publishedYes

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