Scattering effects in resonant magnetotunneling in InAs-based heterostructures

Goran Isić, Dragan Indjin, Vitomir Milanović, Jelena Radovanović, Zoran Ikonić, Paul Harrison

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1 Citation (Scopus)


Electron transport through an InGaAs resonant tunneling structure with Rashba spinorbit interaction and magnetic field parallel to the growth direction was studied theoretically. A nonequilibrium Green's function model was used, wherein interface roughness and longitudinal optical phonon scattering are treated in the self-consistent first Born approximation. The model predicts the main features of the two-dimensional magnetopolaron density of states and the secondary peaks in the I-V curve due to both resonant elastic and inelastic scattering. The I-V curves were studied at magnetic fields around the magnetophonon resonance and the elastic and inelastic contributions identified. At these fields (5 to 7 T), the current spin polarization was found to be dominated by the Zeeman effect and significant even in the presence of scattering events.

Original languageEnglish
Article number051819
Number of pages12
JournalJournal of Nanophotonics
Issue number1
Early online date19 Jul 2011
Publication statusPublished - 19 Jul 2011
Externally publishedYes


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