Selective wavelength tuning of self-assembled InAs quantum dots grown on InP

S. Barik; H. H. Tan; C. Jagadish; N. Vukmirović; P. Harrison

doi:10.1063/1.2203333

Selective wavelength tuning of self-assembled InAs quantum dots grown on InP

S. Barik, H. H. Tan, C. Jagadish, N. Vukmirović, P. Harrison

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

We report the experimental results of tuning the emission wavelength of InAsInP quantum dots (QDs) by varying either the GaAs interlayer thickness or the indium composition of the Inx Ga1-x As interlayer. The InAs QDs are grown on lattice-matched GaInAsP or InP buffers and are capped with an InP layer. AsP exchange is prominent when the QDs are grown on an InP buffer. A model is developed which considers the AsP exchange, gallium interdiffusion, strain, and barrier height. Our theoretical and experimental results show that gallium interdiffusion and the AsP exchange reaction are mainly responsible for the observed shifts in the QD emission wavelength. The model shows that gallium interdiffusion from the interlayer to the InAs QDs grown on a GaInAsP buffer can be utilized to selectively tune the InAs QD emission wavelength over a wide range.

Original language	English
Article number	193112
Journal	Applied Physics Letters
Volume	88
Issue number	19
DOIs	https://doi.org/10.1063/1.2203333
Publication status	Published - 8 May 2006
Externally published	Yes

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@article{0916158ad4464703b0497069d46762c0,

title = "Selective wavelength tuning of self-assembled InAs quantum dots grown on InP",

abstract = "We report the experimental results of tuning the emission wavelength of InAsInP quantum dots (QDs) by varying either the GaAs interlayer thickness or the indium composition of the Inx Ga1-x As interlayer. The InAs QDs are grown on lattice-matched GaInAsP or InP buffers and are capped with an InP layer. AsP exchange is prominent when the QDs are grown on an InP buffer. A model is developed which considers the AsP exchange, gallium interdiffusion, strain, and barrier height. Our theoretical and experimental results show that gallium interdiffusion and the AsP exchange reaction are mainly responsible for the observed shifts in the QD emission wavelength. The model shows that gallium interdiffusion from the interlayer to the InAs QDs grown on a GaInAsP buffer can be utilized to selectively tune the InAs QD emission wavelength over a wide range.",

keywords = "Diffusion, Indium compounds, Lattice constants, Self assembly, Semiconducting gallium compounds, Tuning",

author = "S. Barik and Tan, {H. H.} and C. Jagadish and N. Vukmirovi{\'c} and P. Harrison",

note = "Funding Information: The authors affiliated with the Australian National University gratefully acknowledge financial support from the Australian Research Council (ARC). One of the authors (S.B.) thanks Greg Jolley for his assistance in manuscript preparation.",

year = "2006",

month = may,

day = "8",

doi = "10.1063/1.2203333",

language = "English",

volume = "88",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "19",

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TY - JOUR

T1 - Selective wavelength tuning of self-assembled InAs quantum dots grown on InP

AU - Barik, S.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Vukmirović, N.

AU - Harrison, P.

N1 - Funding Information: The authors affiliated with the Australian National University gratefully acknowledge financial support from the Australian Research Council (ARC). One of the authors (S.B.) thanks Greg Jolley for his assistance in manuscript preparation.

PY - 2006/5/8

Y1 - 2006/5/8

N2 - We report the experimental results of tuning the emission wavelength of InAsInP quantum dots (QDs) by varying either the GaAs interlayer thickness or the indium composition of the Inx Ga1-x As interlayer. The InAs QDs are grown on lattice-matched GaInAsP or InP buffers and are capped with an InP layer. AsP exchange is prominent when the QDs are grown on an InP buffer. A model is developed which considers the AsP exchange, gallium interdiffusion, strain, and barrier height. Our theoretical and experimental results show that gallium interdiffusion and the AsP exchange reaction are mainly responsible for the observed shifts in the QD emission wavelength. The model shows that gallium interdiffusion from the interlayer to the InAs QDs grown on a GaInAsP buffer can be utilized to selectively tune the InAs QD emission wavelength over a wide range.

AB - We report the experimental results of tuning the emission wavelength of InAsInP quantum dots (QDs) by varying either the GaAs interlayer thickness or the indium composition of the Inx Ga1-x As interlayer. The InAs QDs are grown on lattice-matched GaInAsP or InP buffers and are capped with an InP layer. AsP exchange is prominent when the QDs are grown on an InP buffer. A model is developed which considers the AsP exchange, gallium interdiffusion, strain, and barrier height. Our theoretical and experimental results show that gallium interdiffusion and the AsP exchange reaction are mainly responsible for the observed shifts in the QD emission wavelength. The model shows that gallium interdiffusion from the interlayer to the InAs QDs grown on a GaInAsP buffer can be utilized to selectively tune the InAs QD emission wavelength over a wide range.

KW - Diffusion

KW - Indium compounds

KW - Lattice constants

KW - Self assembly

KW - Semiconducting gallium compounds

KW - Tuning

UR - http://www.scopus.com/inward/record.url?scp=33646711189&partnerID=8YFLogxK

U2 - 10.1063/1.2203333

DO - 10.1063/1.2203333

M3 - Article

AN - SCOPUS:33646711189

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 19

M1 - 193112

ER -

Selective wavelength tuning of self-assembled InAs quantum dots grown on InP

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