Self-Consistent Rate Equation Modelling of a Terahertz GaAs/AlGaAs Quantum-Cascade Laser

D. Indjin; P. Harrison; R. W. Kelsall; Z. Ikonić

doi:10.1109/THZ.2002.1037600

Self-Consistent Rate Equation Modelling of a Terahertz GaAs/AlGaAs Quantum-Cascade Laser

D. Indjin, P. Harrison, R. W. Kelsall, Z. Ikonić

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

In this work, electron transport in GaAs/AlGaAs quantum cascade lasers operating at far-infrared wavelengths is calculated self-consistently using an intersubband scattering model. Subband populations and carrier transition rates are calculated and all relevant electron-electron and electron-LO phonon scatterings between the injector/collector and active region levels (13-levels in total) are included. Employing an energy balance equation which includes the influence of both electron-LO phonon and electron-electron scattering, the method also includes the evaluation of the electron temperature of the non-equilibrium carrier distributions in the device. The calculated threshold currents (J_th = 250-300 kA/cm²) and electric field-current density characteristics (current saturation is predicted at ∼680 A/cm²), are in good qualitative and quantitative agreement with measurements in a recent experimental realization (Kohler et al, Nature, vol. 417, pp. 156-159, 2002). Due to the increased influence on electron-electron scatterings, the electron temperature is found to be more sensitive to the current density than in mid-infrared devices. The technique promises to be a powerful tool for the optimization of new, improved Terahertz quantum cascade lasers.

Original language	English
Title of host publication	IEEE 10th International Conference on Terahertz Electronics, Proceedings
Subtitle of host publication	THz 2002
Editors	J M Chamberlain, A G Davies, P Harrison, E H Linfield, R E Miles, S Withington
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	97-100
Number of pages	4
ISBN (Print)	0780376307
DOIs	https://doi.org/10.1109/THZ.2002.1037600
Publication status	Published - 7 Nov 2002
Externally published	Yes
Event	10th IEEE International Conference on Terahertz Electronics - Cambridge, United Kingdom Duration: 9 Sep 2002 → 10 Sep 2002 Conference number: 10

Conference

Conference	10th IEEE International Conference on Terahertz Electronics
Abbreviated title	THz 2002
Country/Territory	United Kingdom
City	Cambridge
Period	9/09/02 → 10/09/02

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Indjin, D., Harrison, P., Kelsall, R. W., & Ikonić, Z. (2002). Self-Consistent Rate Equation Modelling of a Terahertz GaAs/AlGaAs Quantum-Cascade Laser. In J. M. Chamberlain, A. G. Davies, P. Harrison, E. H. Linfield, R. E. Miles, & S. Withington (Eds.), IEEE 10th International Conference on Terahertz Electronics, Proceedings: THz 2002 (pp. 97-100). [1037600] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/THZ.2002.1037600

Indjin, D. ; Harrison, P. ; Kelsall, R. W. et al. / Self-Consistent Rate Equation Modelling of a Terahertz GaAs/AlGaAs Quantum-Cascade Laser. IEEE 10th International Conference on Terahertz Electronics, Proceedings: THz 2002. editor / J M Chamberlain ; A G Davies ; P Harrison ; E H Linfield ; R E Miles ; S Withington. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 97-100

@inproceedings{0ea5909629264b7fb4ea8267bc75c496,

title = "Self-Consistent Rate Equation Modelling of a Terahertz GaAs/AlGaAs Quantum-Cascade Laser",

abstract = "In this work, electron transport in GaAs/AlGaAs quantum cascade lasers operating at far-infrared wavelengths is calculated self-consistently using an intersubband scattering model. Subband populations and carrier transition rates are calculated and all relevant electron-electron and electron-LO phonon scatterings between the injector/collector and active region levels (13-levels in total) are included. Employing an energy balance equation which includes the influence of both electron-LO phonon and electron-electron scattering, the method also includes the evaluation of the electron temperature of the non-equilibrium carrier distributions in the device. The calculated threshold currents (Jth = 250-300 kA/cm2) and electric field-current density characteristics (current saturation is predicted at ∼680 A/cm2), are in good qualitative and quantitative agreement with measurements in a recent experimental realization (Kohler et al, Nature, vol. 417, pp. 156-159, 2002). Due to the increased influence on electron-electron scatterings, the electron temperature is found to be more sensitive to the current density than in mid-infrared devices. The technique promises to be a powerful tool for the optimization of new, improved Terahertz quantum cascade lasers.",

keywords = "electron temperature, intersubband transitions, Quantum cascade lasers, terahertz radiations",

author = "D. Indjin and P. Harrison and Kelsall, {R. W.} and Z. Ikoni{\'c}",

note = "Funding Information: The authors would like to thank A. Tredicucci from NEST-INFM and Scuola Normale Superiore in Pisa, Italy, for communicating his results before publication. This work is supported by EPSRC grant No. GR/R04485. Publisher Copyright: {\textcopyright} 2002 IEEE.; 10th IEEE International Conference on Terahertz Electronics, THz 2002 ; Conference date: 09-09-2002 Through 10-09-2002",

year = "2002",

month = nov,

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doi = "10.1109/THZ.2002.1037600",

language = "English",

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pages = "97--100",

editor = "Chamberlain, {J M} and Davies, {A G} and P Harrison and Linfield, {E H} and Miles, {R E} and S Withington",

booktitle = "IEEE 10th International Conference on Terahertz Electronics, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Indjin, D, Harrison, P, Kelsall, RW & Ikonić, Z 2002, Self-Consistent Rate Equation Modelling of a Terahertz GaAs/AlGaAs Quantum-Cascade Laser. in JM Chamberlain, AG Davies, P Harrison, EH Linfield, RE Miles & S Withington (eds), IEEE 10th International Conference on Terahertz Electronics, Proceedings: THz 2002., 1037600, Institute of Electrical and Electronics Engineers Inc., pp. 97-100, 10th IEEE International Conference on Terahertz Electronics, Cambridge, United Kingdom, 9/09/02. https://doi.org/10.1109/THZ.2002.1037600

Self-Consistent Rate Equation Modelling of a Terahertz GaAs/AlGaAs Quantum-Cascade Laser. / Indjin, D.; Harrison, P.; Kelsall, R. W. et al.

IEEE 10th International Conference on Terahertz Electronics, Proceedings: THz 2002. ed. / J M Chamberlain; A G Davies; P Harrison; E H Linfield; R E Miles; S Withington. Institute of Electrical and Electronics Engineers Inc., 2002. p. 97-100 1037600.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Self-Consistent Rate Equation Modelling of a Terahertz GaAs/AlGaAs Quantum-Cascade Laser

AU - Indjin, D.

AU - Harrison, P.

AU - Kelsall, R. W.

AU - Ikonić, Z.

N1 - Conference code: 10

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Y1 - 2002/11/7

N2 - In this work, electron transport in GaAs/AlGaAs quantum cascade lasers operating at far-infrared wavelengths is calculated self-consistently using an intersubband scattering model. Subband populations and carrier transition rates are calculated and all relevant electron-electron and electron-LO phonon scatterings between the injector/collector and active region levels (13-levels in total) are included. Employing an energy balance equation which includes the influence of both electron-LO phonon and electron-electron scattering, the method also includes the evaluation of the electron temperature of the non-equilibrium carrier distributions in the device. The calculated threshold currents (Jth = 250-300 kA/cm2) and electric field-current density characteristics (current saturation is predicted at ∼680 A/cm2), are in good qualitative and quantitative agreement with measurements in a recent experimental realization (Kohler et al, Nature, vol. 417, pp. 156-159, 2002). Due to the increased influence on electron-electron scatterings, the electron temperature is found to be more sensitive to the current density than in mid-infrared devices. The technique promises to be a powerful tool for the optimization of new, improved Terahertz quantum cascade lasers.

AB - In this work, electron transport in GaAs/AlGaAs quantum cascade lasers operating at far-infrared wavelengths is calculated self-consistently using an intersubband scattering model. Subband populations and carrier transition rates are calculated and all relevant electron-electron and electron-LO phonon scatterings between the injector/collector and active region levels (13-levels in total) are included. Employing an energy balance equation which includes the influence of both electron-LO phonon and electron-electron scattering, the method also includes the evaluation of the electron temperature of the non-equilibrium carrier distributions in the device. The calculated threshold currents (Jth = 250-300 kA/cm2) and electric field-current density characteristics (current saturation is predicted at ∼680 A/cm2), are in good qualitative and quantitative agreement with measurements in a recent experimental realization (Kohler et al, Nature, vol. 417, pp. 156-159, 2002). Due to the increased influence on electron-electron scatterings, the electron temperature is found to be more sensitive to the current density than in mid-infrared devices. The technique promises to be a powerful tool for the optimization of new, improved Terahertz quantum cascade lasers.

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KW - intersubband transitions

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KW - terahertz radiations

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BT - IEEE 10th International Conference on Terahertz Electronics, Proceedings

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PB - Institute of Electrical and Electronics Engineers Inc.

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Indjin D, Harrison P, Kelsall RW, Ikonić Z. Self-Consistent Rate Equation Modelling of a Terahertz GaAs/AlGaAs Quantum-Cascade Laser. In Chamberlain JM, Davies AG, Harrison P, Linfield EH, Miles RE, Withington S, editors, IEEE 10th International Conference on Terahertz Electronics, Proceedings: THz 2002. Institute of Electrical and Electronics Engineers Inc. 2002. p. 97-100. 1037600 doi: 10.1109/THZ.2002.1037600

Self-Consistent Rate Equation Modelling of a Terahertz GaAs/AlGaAs Quantum-Cascade Laser

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