Shallow BF2 implants in Xe-bombardment-preamorphized Si

The interaction between Xe and F

M. Werner, J. A. Van Den Berg, D. G. Armour, G. Carter, T. Feudel, M. Herden, M. Bersani, D. Giubertoni, L. Ottaviano, C. Bongiorno, G. Mannino, P. Bailey, T. C.Q. Noakes

Research output: Contribution to journalArticle

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Abstract

Si(100) samples, preamorphized to a depth of ~30 nm using 20 keV Xe ions to a nominal fluence of 2×1014 cm-2 were implanted with 1 and 3 keV BF2 ions to fluences of 7×1014 cm-2. Following annealing over a range of temperatures (from 600 to 1130°C) and times the implant redistribution was investigated using medium-energy ion scattering (MEIS), secondary ion mass spectrometry (SIMS), and energy filtered transmission electron microscopy (EFTEM). MEIS studies showed that for all annealing conditions leading to solid phase epitaxial regrowth, approximately half of the Xe had accumulated at depths of 7 nm for the 1 keV and at 13 nm for the 3 keV BF2 implant. These depths correspond to the end of range of the B and F within the amorphous Si. SIMS showed that in the preamorphized samples, approximately 10% of the F migrates into the bulk and is trapped at the same depths in a ~1:1 ratio to Xe. These observations indicate an interaction between the Xe and F implants and a damage structure that becomes a trapping site. A small fraction of the implanted B is also trapped at this depth. EXTEM micrographs suggest the development of Xe agglomerates at the depths determined by MEIS. The effect is interpreted in terms of the formation of a volume defect structure within the amorphized Si, leading to F stabilized Xe agglomerates or XeF precipitates.

Original languageEnglish
Article number151904
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number15
DOIs
Publication statusPublished - 5 Apr 2005
Externally publishedYes

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bombardment
ion scattering
interactions
secondary ion mass spectrometry
fluence
annealing
energy
solid phases
precipitates
ions
trapping
damage
transmission electron microscopy
defects
temperature

Cite this

Werner, M., Van Den Berg, J. A., Armour, D. G., Carter, G., Feudel, T., Herden, M., ... Noakes, T. C. Q. (2005). Shallow BF2 implants in Xe-bombardment-preamorphized Si: The interaction between Xe and F. Applied Physics Letters, 86(15), 1-3. [151904]. https://doi.org/10.1063/1.1900305
Werner, M. ; Van Den Berg, J. A. ; Armour, D. G. ; Carter, G. ; Feudel, T. ; Herden, M. ; Bersani, M. ; Giubertoni, D. ; Ottaviano, L. ; Bongiorno, C. ; Mannino, G. ; Bailey, P. ; Noakes, T. C.Q. / Shallow BF2 implants in Xe-bombardment-preamorphized Si : The interaction between Xe and F. In: Applied Physics Letters. 2005 ; Vol. 86, No. 15. pp. 1-3.
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abstract = "Si(100) samples, preamorphized to a depth of ~30 nm using 20 keV Xe ions to a nominal fluence of 2×1014 cm-2 were implanted with 1 and 3 keV BF2 ions to fluences of 7×1014 cm-2. Following annealing over a range of temperatures (from 600 to 1130°C) and times the implant redistribution was investigated using medium-energy ion scattering (MEIS), secondary ion mass spectrometry (SIMS), and energy filtered transmission electron microscopy (EFTEM). MEIS studies showed that for all annealing conditions leading to solid phase epitaxial regrowth, approximately half of the Xe had accumulated at depths of 7 nm for the 1 keV and at 13 nm for the 3 keV BF2 implant. These depths correspond to the end of range of the B and F within the amorphous Si. SIMS showed that in the preamorphized samples, approximately 10{\%} of the F migrates into the bulk and is trapped at the same depths in a ~1:1 ratio to Xe. These observations indicate an interaction between the Xe and F implants and a damage structure that becomes a trapping site. A small fraction of the implanted B is also trapped at this depth. EXTEM micrographs suggest the development of Xe agglomerates at the depths determined by MEIS. The effect is interpreted in terms of the formation of a volume defect structure within the amorphized Si, leading to F stabilized Xe agglomerates or XeF precipitates.",
author = "M. Werner and {Van Den Berg}, {J. A.} and Armour, {D. G.} and G. Carter and T. Feudel and M. Herden and M. Bersani and D. Giubertoni and L. Ottaviano and C. Bongiorno and G. Mannino and P. Bailey and Noakes, {T. C.Q.}",
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Werner, M, Van Den Berg, JA, Armour, DG, Carter, G, Feudel, T, Herden, M, Bersani, M, Giubertoni, D, Ottaviano, L, Bongiorno, C, Mannino, G, Bailey, P & Noakes, TCQ 2005, 'Shallow BF2 implants in Xe-bombardment-preamorphized Si: The interaction between Xe and F', Applied Physics Letters, vol. 86, no. 15, 151904, pp. 1-3. https://doi.org/10.1063/1.1900305

Shallow BF2 implants in Xe-bombardment-preamorphized Si : The interaction between Xe and F. / Werner, M.; Van Den Berg, J. A.; Armour, D. G.; Carter, G.; Feudel, T.; Herden, M.; Bersani, M.; Giubertoni, D.; Ottaviano, L.; Bongiorno, C.; Mannino, G.; Bailey, P.; Noakes, T. C.Q.

In: Applied Physics Letters, Vol. 86, No. 15, 151904, 05.04.2005, p. 1-3.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Shallow BF2 implants in Xe-bombardment-preamorphized Si

T2 - The interaction between Xe and F

AU - Werner, M.

AU - Van Den Berg, J. A.

AU - Armour, D. G.

AU - Carter, G.

AU - Feudel, T.

AU - Herden, M.

AU - Bersani, M.

AU - Giubertoni, D.

AU - Ottaviano, L.

AU - Bongiorno, C.

AU - Mannino, G.

AU - Bailey, P.

AU - Noakes, T. C.Q.

PY - 2005/4/5

Y1 - 2005/4/5

N2 - Si(100) samples, preamorphized to a depth of ~30 nm using 20 keV Xe ions to a nominal fluence of 2×1014 cm-2 were implanted with 1 and 3 keV BF2 ions to fluences of 7×1014 cm-2. Following annealing over a range of temperatures (from 600 to 1130°C) and times the implant redistribution was investigated using medium-energy ion scattering (MEIS), secondary ion mass spectrometry (SIMS), and energy filtered transmission electron microscopy (EFTEM). MEIS studies showed that for all annealing conditions leading to solid phase epitaxial regrowth, approximately half of the Xe had accumulated at depths of 7 nm for the 1 keV and at 13 nm for the 3 keV BF2 implant. These depths correspond to the end of range of the B and F within the amorphous Si. SIMS showed that in the preamorphized samples, approximately 10% of the F migrates into the bulk and is trapped at the same depths in a ~1:1 ratio to Xe. These observations indicate an interaction between the Xe and F implants and a damage structure that becomes a trapping site. A small fraction of the implanted B is also trapped at this depth. EXTEM micrographs suggest the development of Xe agglomerates at the depths determined by MEIS. The effect is interpreted in terms of the formation of a volume defect structure within the amorphized Si, leading to F stabilized Xe agglomerates or XeF precipitates.

AB - Si(100) samples, preamorphized to a depth of ~30 nm using 20 keV Xe ions to a nominal fluence of 2×1014 cm-2 were implanted with 1 and 3 keV BF2 ions to fluences of 7×1014 cm-2. Following annealing over a range of temperatures (from 600 to 1130°C) and times the implant redistribution was investigated using medium-energy ion scattering (MEIS), secondary ion mass spectrometry (SIMS), and energy filtered transmission electron microscopy (EFTEM). MEIS studies showed that for all annealing conditions leading to solid phase epitaxial regrowth, approximately half of the Xe had accumulated at depths of 7 nm for the 1 keV and at 13 nm for the 3 keV BF2 implant. These depths correspond to the end of range of the B and F within the amorphous Si. SIMS showed that in the preamorphized samples, approximately 10% of the F migrates into the bulk and is trapped at the same depths in a ~1:1 ratio to Xe. These observations indicate an interaction between the Xe and F implants and a damage structure that becomes a trapping site. A small fraction of the implanted B is also trapped at this depth. EXTEM micrographs suggest the development of Xe agglomerates at the depths determined by MEIS. The effect is interpreted in terms of the formation of a volume defect structure within the amorphized Si, leading to F stabilized Xe agglomerates or XeF precipitates.

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U2 - 10.1063/1.1900305

DO - 10.1063/1.1900305

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