Si-based electroluminescence at THz frequencies

S. A. Lynch; S. S. Dhillon; R. Bates; D. J. Paul; D. D. Arnone; D. J. Robbins; Z. Ikonic; R. W. Kelsall; P. Harrison; D. J. Norris; A. G. Cullis; C. R. Pidgeon; P. Murzyn; A. Loudon

doi:10.1016/S0921-5107(01)00782-6

Si-based electroluminescence at THz frequencies

S. A. Lynch, S. S. Dhillon, R. Bates, D. J. Paul, D. D. Arnone, D. J. Robbins, Z. Ikonic, R. W. Kelsall, P. Harrison, D. J. Norris, A. G. Cullis, C. R. Pidgeon, P. Murzyn, A. Loudon

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

Experimental results of electroluminescence in the terahertz gap, at 6 THz (or 40 μm) from Si/SiGe multi quantum well structures, grown by a commercial chemical vapour deposition system are presented. Theoretical simulations were used to design the heterolayer structure and to explain the emission and absorption features. Electrical and materials characterisation is also presented to demonstrate the quality of the heterolayers.

Original language	English
Pages (from-to)	10-12
Number of pages	3
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	89
Issue number	1-3
Early online date	21 Jan 2002
DOIs	https://doi.org/10.1016/S0921-5107(01)00782-6
Publication status	Published - 14 Feb 2002
Externally published	Yes

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Lynch, S. A., Dhillon, S. S., Bates, R., Paul, D. J., Arnone, D. D., Robbins, D. J., Ikonic, Z., Kelsall, R. W., Harrison, P., Norris, D. J., Cullis, A. G., Pidgeon, C. R., Murzyn, P., & Loudon, A. (2002). Si-based electroluminescence at THz frequencies. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 89(1-3), 10-12. https://doi.org/10.1016/S0921-5107(01)00782-6

@article{352b10cdd8894ae5b14cd5a46a05eb11,

title = "Si-based electroluminescence at THz frequencies",

abstract = "Experimental results of electroluminescence in the terahertz gap, at 6 THz (or 40 μm) from Si/SiGe multi quantum well structures, grown by a commercial chemical vapour deposition system are presented. Theoretical simulations were used to design the heterolayer structure and to explain the emission and absorption features. Electrical and materials characterisation is also presented to demonstrate the quality of the heterolayers.",

keywords = "Germanium, Luminescence, Quantum effects, Silicon",

author = "Lynch, {S. A.} and Dhillon, {S. S.} and R. Bates and Paul, {D. J.} and Arnone, {D. D.} and Robbins, {D. J.} and Z. Ikonic and Kelsall, {R. W.} and P. Harrison and Norris, {D. J.} and Cullis, {A. G.} and Pidgeon, {C. R.} and P. Murzyn and A. Loudon",

note = "Funding Information: This project is funded by DARPA under USAF contract no. F-19628-C-99-0074.",

year = "2002",

month = feb,

day = "14",

doi = "10.1016/S0921-5107(01)00782-6",

language = "English",

volume = "89",

pages = "10--12",

journal = "Materials Science and Engineering: B",

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publisher = "Elsevier BV",

number = "1-3",

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Lynch, SA, Dhillon, SS, Bates, R, Paul, DJ, Arnone, DD, Robbins, DJ, Ikonic, Z, Kelsall, RW, Harrison, P, Norris, DJ, Cullis, AG, Pidgeon, CR, Murzyn, P & Loudon, A 2002, 'Si-based electroluminescence at THz frequencies', Materials Science and Engineering B: Solid-State Materials for Advanced Technology, vol. 89, no. 1-3, pp. 10-12. https://doi.org/10.1016/S0921-5107(01)00782-6

TY - JOUR

T1 - Si-based electroluminescence at THz frequencies

AU - Lynch, S. A.

AU - Dhillon, S. S.

AU - Bates, R.

AU - Paul, D. J.

AU - Arnone, D. D.

AU - Robbins, D. J.

AU - Ikonic, Z.

AU - Kelsall, R. W.

AU - Harrison, P.

AU - Norris, D. J.

AU - Cullis, A. G.

AU - Pidgeon, C. R.

AU - Murzyn, P.

AU - Loudon, A.

N1 - Funding Information: This project is funded by DARPA under USAF contract no. F-19628-C-99-0074.

PY - 2002/2/14

Y1 - 2002/2/14

N2 - Experimental results of electroluminescence in the terahertz gap, at 6 THz (or 40 μm) from Si/SiGe multi quantum well structures, grown by a commercial chemical vapour deposition system are presented. Theoretical simulations were used to design the heterolayer structure and to explain the emission and absorption features. Electrical and materials characterisation is also presented to demonstrate the quality of the heterolayers.

AB - Experimental results of electroluminescence in the terahertz gap, at 6 THz (or 40 μm) from Si/SiGe multi quantum well structures, grown by a commercial chemical vapour deposition system are presented. Theoretical simulations were used to design the heterolayer structure and to explain the emission and absorption features. Electrical and materials characterisation is also presented to demonstrate the quality of the heterolayers.

KW - Germanium

KW - Luminescence

KW - Quantum effects

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=0037074831&partnerID=8YFLogxK

U2 - 10.1016/S0921-5107(01)00782-6

DO - 10.1016/S0921-5107(01)00782-6

M3 - Article

AN - SCOPUS:0037074831

VL - 89

SP - 10

EP - 12

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

SN - 0921-5107

IS - 1-3

ER -

Si-based electroluminescence at THz frequencies

Abstract

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