Experimental results of electroluminescence in the terahertz gap, at 6 THz (or 40 μm) from Si/SiGe multi quantum well structures, grown by a commercial chemical vapour deposition system are presented. Theoretical simulations were used to design the heterolayer structure and to explain the emission and absorption features. Electrical and materials characterisation is also presented to demonstrate the quality of the heterolayers.
|Number of pages||3|
|Journal||Materials Science and Engineering B: Solid-State Materials for Advanced Technology|
|Early online date||21 Jan 2002|
|Publication status||Published - 14 Feb 2002|