Si-based electroluminescence at THz frequencies

S. A. Lynch, S. S. Dhillon, R. Bates, D. J. Paul, D. D. Arnone, D. J. Robbins, Z. Ikonic, R. W. Kelsall, P. Harrison, D. J. Norris, A. G. Cullis, C. R. Pidgeon, P. Murzyn, A. Loudon

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

Experimental results of electroluminescence in the terahertz gap, at 6 THz (or 40 μm) from Si/SiGe multi quantum well structures, grown by a commercial chemical vapour deposition system are presented. Theoretical simulations were used to design the heterolayer structure and to explain the emission and absorption features. Electrical and materials characterisation is also presented to demonstrate the quality of the heterolayers.

Original languageEnglish
Pages (from-to)10-12
Number of pages3
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume89
Issue number1-3
Early online date21 Jan 2002
DOIs
Publication statusPublished - 14 Feb 2002
Externally publishedYes

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