Si ultrashallow p+n junctions using low-energy boron implantation

A. Bousetta, J. A. Van Den Berg, D. G. Armour, P. C. Zalm

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Abstract

Ultrashallow boron-doped junctions in silicon have been investigated using secondary-ion mass spectroscopy and four-point probe technique. The junctions were obtained by implanting B+ ions into n-type Si(100) at 200 eV to doses of 1.5×1014 and 6×1014 cm-2 and at substrate temperatures in the range 30-900°C during B implantation. Both post-implantation in situ annealing by electron bombardment heating and rapid thermal annealing in a separate system were employed. The results show that sub 20 nm p+n junctions are obtained without the need for further processes such as preamorphization and high-temperature annealing.

Original languageEnglish
Pages (from-to)1626-1628
Number of pages3
JournalApplied Physics Letters
Volume58
Issue number15
DOIs
Publication statusPublished - 15 Apr 1991
Externally publishedYes

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