Si ultrashallow p+n junctions using low-energy boron implantation

A. Bousetta, J. A. Van Den Berg, D. G. Armour, P. C. Zalm

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Ultrashallow boron-doped junctions in silicon have been investigated using secondary-ion mass spectroscopy and four-point probe technique. The junctions were obtained by implanting B+ ions into n-type Si(100) at 200 eV to doses of 1.5×1014 and 6×1014 cm-2 and at substrate temperatures in the range 30-900°C during B implantation. Both post-implantation in situ annealing by electron bombardment heating and rapid thermal annealing in a separate system were employed. The results show that sub 20 nm p+n junctions are obtained without the need for further processes such as preamorphization and high-temperature annealing.

Original languageEnglish
Pages (from-to)1626-1628
Number of pages3
JournalApplied Physics Letters
Volume58
Issue number15
DOIs
Publication statusPublished - 15 Apr 1991
Externally publishedYes

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p-n junctions
implantation
boron
annealing
electron bombardment
energy
ions
mass spectroscopy
dosage
heating
probes
silicon
temperature

Cite this

Bousetta, A. ; Van Den Berg, J. A. ; Armour, D. G. ; Zalm, P. C. / Si ultrashallow p+n junctions using low-energy boron implantation. In: Applied Physics Letters. 1991 ; Vol. 58, No. 15. pp. 1626-1628.
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Si ultrashallow p+n junctions using low-energy boron implantation. / Bousetta, A.; Van Den Berg, J. A.; Armour, D. G.; Zalm, P. C.

In: Applied Physics Letters, Vol. 58, No. 15, 15.04.1991, p. 1626-1628.

Research output: Contribution to journalArticle

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