Abstract
Ultrashallow boron-doped junctions in silicon have been investigated using secondary-ion mass spectroscopy and four-point probe technique. The junctions were obtained by implanting B+ ions into n-type Si(100) at 200 eV to doses of 1.5×1014 and 6×1014 cm-2 and at substrate temperatures in the range 30-900°C during B implantation. Both post-implantation in situ annealing by electron bombardment heating and rapid thermal annealing in a separate system were employed. The results show that sub 20 nm p+n junctions are obtained without the need for further processes such as preamorphization and high-temperature annealing.
Original language | English |
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Pages (from-to) | 1626-1628 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 58 |
Issue number | 15 |
DOIs | |
Publication status | Published - 15 Apr 1991 |
Externally published | Yes |