Si ultrashallow p+n junctions using low-energy boron implantation

A. Bousetta; J. A. Van Den Berg; D. G. Armour; P. C. Zalm

doi:10.1063/1.105146

Si ultrashallow p⁺n junctions using low-energy boron implantation

A. Bousetta, J. A. Van Den Berg, D. G. Armour, P. C. Zalm

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31 Citations (Scopus)

Abstract

Ultrashallow boron-doped junctions in silicon have been investigated using secondary-ion mass spectroscopy and four-point probe technique. The junctions were obtained by implanting B⁺ ions into n-type Si(100) at 200 eV to doses of 1.5×10¹⁴ and 6×10¹⁴ cm^-2 and at substrate temperatures in the range 30-900°C during B implantation. Both post-implantation in situ annealing by electron bombardment heating and rapid thermal annealing in a separate system were employed. The results show that sub 20 nm p⁺n junctions are obtained without the need for further processes such as preamorphization and high-temperature annealing.

Original language	English
Pages (from-to)	1626-1628
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	15
DOIs	https://doi.org/10.1063/1.105146
Publication status	Published - 15 Apr 1991
Externally published	Yes

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title = "Si ultrashallow p+n junctions using low-energy boron implantation",

abstract = "Ultrashallow boron-doped junctions in silicon have been investigated using secondary-ion mass spectroscopy and four-point probe technique. The junctions were obtained by implanting B+ ions into n-type Si(100) at 200 eV to doses of 1.5×1014 and 6×1014 cm-2 and at substrate temperatures in the range 30-900°C during B implantation. Both post-implantation in situ annealing by electron bombardment heating and rapid thermal annealing in a separate system were employed. The results show that sub 20 nm p+n junctions are obtained without the need for further processes such as preamorphization and high-temperature annealing.",

author = "A. Bousetta and \{Van Den Berg\}, \{J. A.\} and Armour, \{D. G.\} and Zalm, \{P. C.\}",

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T1 - Si ultrashallow p+n junctions using low-energy boron implantation

AU - Bousetta, A.

AU - Van Den Berg, J. A.

AU - Armour, D. G.

AU - Zalm, P. C.

PY - 1991/4/15

Y1 - 1991/4/15

N2 - Ultrashallow boron-doped junctions in silicon have been investigated using secondary-ion mass spectroscopy and four-point probe technique. The junctions were obtained by implanting B+ ions into n-type Si(100) at 200 eV to doses of 1.5×1014 and 6×1014 cm-2 and at substrate temperatures in the range 30-900°C during B implantation. Both post-implantation in situ annealing by electron bombardment heating and rapid thermal annealing in a separate system were employed. The results show that sub 20 nm p+n junctions are obtained without the need for further processes such as preamorphization and high-temperature annealing.

AB - Ultrashallow boron-doped junctions in silicon have been investigated using secondary-ion mass spectroscopy and four-point probe technique. The junctions were obtained by implanting B+ ions into n-type Si(100) at 200 eV to doses of 1.5×1014 and 6×1014 cm-2 and at substrate temperatures in the range 30-900°C during B implantation. Both post-implantation in situ annealing by electron bombardment heating and rapid thermal annealing in a separate system were employed. The results show that sub 20 nm p+n junctions are obtained without the need for further processes such as preamorphization and high-temperature annealing.

UR - https://www.scopus.com/pages/publications/0000798107

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DO - 10.1063/1.105146

M3 - Article

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VL - 58

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Si ultrashallow p⁺n junctions using low-energy boron implantation

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