SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications

S. Wirths, D. Buca, Z. Ikonic, P. Harrison, A. T. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. M. Hartmann, D. Grützmacher, S. Mantl

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Abstract

In this contribution, we propose a laser concept based on a double heterostructure consisting of tensile strained Ge as the active medium and SiGeSn ternaries as cladding layers. Electronic band-structure calculations were used to determine the Si and Sn concentrations yielding a type I heterostructure with appropriate band-offsets (50 meV) between strained Ge and SiGeSn. Reduced pressure chemical vapor deposition system was employed to study the laser structure growth. Detailed analyses regarding layer composition, crystal quality, surface morphology and elastic strain are presented. A strong temperature dependence of the Si and Sn incorporation has been obtained, ranging from 4 to 19 at.% Si and from 4 to 12 at.% Sn (growth temperatures between 350 °C and 475 °C). The high single crystalline quality and low surface roughness of 0.5-0.75 nm demonstrate that our layers are suitable for heterostructure laser fabrication.

Original languageEnglish
Pages (from-to)183-187
Number of pages5
JournalThin Solid Films
Volume557
Early online date26 Oct 2013
DOIs
Publication statusPublished - 30 Apr 2014
Externally publishedYes

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