Silicon germanium quantum cascade heterostructures for far-infrared emission

Robert W. Kelsall, Zoran Ikonic, Paul Harrison, Stephen A. Lynch, Robert Bates, Douglas J. Paul, David J. Norris, San Lin Liew, Anthony G. Cullis, David J. Robbins, Pawel Murzyn, Carl R. Pidgeon, Donald D. Arnone, Richard A. Soref

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)


Terahertz (far-infrared) intersubband electroluminescence is reported in p-type Si/SiGe quantum wells and quantum cascade structures. Surface-normal emission (without the aid of a surface grating) from light hole - heavy hole intersubband transitions has been observed for the first time in a quantum cascade device. Edge-emission measurements have also been performed, which show emission from both heavy hole - heavy hole and light hole - heavy hole transitions, and have allowed demonstration of the polarisation dependence of the emitted power, according to the selection rules for the intersubband interactions. The electroluminescence is visible up to temperatures of ∼150K, in the multiple quantum well structures, and ≥77K in the quantum cascade structure.

Original languageEnglish
Title of host publicationSymposium on Integrated Optoelectronic Devices
Subtitle of host publicationSilicon-based and Hybrid Optoelectronics IV
EditorsDavid J. Robbins, Ghassan E. Jabbour
Number of pages7
Publication statusPublished - 27 Mar 2002
Externally publishedYes
EventSymposium on Integrated Optoelectronic Devices: Silicon-based and Hybrid Optoelectronics IV - San Jose, United States
Duration: 19 Jan 200225 Jan 2002

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


ConferenceSymposium on Integrated Optoelectronic Devices
Country/TerritoryUnited States
CitySan Jose


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