Silicon-nanocrystal-based multiple-tunnel junction devices obtained by a combination of V-groove and ion beam synthesis techniques

P. Normand, E. Kapetanakis, D. Tsoukalas, A. Tserepi, E. Tsoi, K. Beltsios, K. Aidinis, S. Zhang, J. Van Den Berg

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Abstract

Multiple-tunnel junction devices with a source–drain electrode separation ranging from 50 to 200 nm and non-linear source–drain current–voltage characteristics, are constructed by a combination of optical lithography, anisotropic wet and dry etching and low-energy Si ion implantation. Electrical characteristics are found to depend strongly on the Si implantation dose and source–drain separation.

Original languageEnglish
Pages (from-to)1003-1007
Number of pages5
JournalMicroelectronic Engineering
Volume57-58
DOIs
Publication statusPublished - Sep 2001
Externally publishedYes

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