Silicon-nanocrystal-based multiple-tunnel junction devices obtained by a combination of V-groove and ion beam synthesis techniques

P. Normand; E. Kapetanakis; D. Tsoukalas; A. Tserepi; E. Tsoi; K. Beltsios; K. Aidinis; S. Zhang; J. Van Den Berg

doi:10.1016/S0167-9317(01)00432-4

Silicon-nanocrystal-based multiple-tunnel junction devices obtained by a combination of V-groove and ion beam synthesis techniques

P. Normand, E. Kapetanakis, D. Tsoukalas, A. Tserepi, E. Tsoi, K. Beltsios, K. Aidinis, S. Zhang, J. Van Den Berg

Research output: Contribution to journal › Article › peer-review

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Abstract

Multiple-tunnel junction devices with a source–drain electrode separation ranging from 50 to 200 nm and non-linear source–drain current–voltage characteristics, are constructed by a combination of optical lithography, anisotropic wet and dry etching and low-energy Si ion implantation. Electrical characteristics are found to depend strongly on the Si implantation dose and source–drain separation.

Original language	English
Pages (from-to)	1003-1007
Number of pages	5
Journal	Microelectronic Engineering
Volume	57-58
DOIs	https://doi.org/10.1016/S0167-9317(01)00432-4
Publication status	Published - Sept 2001
Externally published	Yes

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Cite this

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title = "Silicon-nanocrystal-based multiple-tunnel junction devices obtained by a combination of V-groove and ion beam synthesis techniques",

abstract = "Multiple-tunnel junction devices with a source–drain electrode separation ranging from 50 to 200 nm and non-linear source–drain current–voltage characteristics, are constructed by a combination of optical lithography, anisotropic wet and dry etching and low-energy Si ion implantation. Electrical characteristics are found to depend strongly on the Si implantation dose and source–drain separation.",

author = "P. Normand and E. Kapetanakis and D. Tsoukalas and A. Tserepi and E. Tsoi and K. Beltsios and K. Aidinis and S. Zhang and \{Van Den Berg\}, J.",

year = "2001",

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doi = "10.1016/S0167-9317(01)00432-4",

language = "English",

volume = "57-58",

pages = "1003--1007",

journal = "Microelectronic Engineering",

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T1 - Silicon-nanocrystal-based multiple-tunnel junction devices obtained by a combination of V-groove and ion beam synthesis techniques

AU - Normand, P.

AU - Kapetanakis, E.

AU - Tsoukalas, D.

AU - Tserepi, A.

AU - Tsoi, E.

AU - Beltsios, K.

AU - Aidinis, K.

AU - Zhang, S.

AU - Van Den Berg, J.

PY - 2001/9

Y1 - 2001/9

N2 - Multiple-tunnel junction devices with a source–drain electrode separation ranging from 50 to 200 nm and non-linear source–drain current–voltage characteristics, are constructed by a combination of optical lithography, anisotropic wet and dry etching and low-energy Si ion implantation. Electrical characteristics are found to depend strongly on the Si implantation dose and source–drain separation.

AB - Multiple-tunnel junction devices with a source–drain electrode separation ranging from 50 to 200 nm and non-linear source–drain current–voltage characteristics, are constructed by a combination of optical lithography, anisotropic wet and dry etching and low-energy Si ion implantation. Electrical characteristics are found to depend strongly on the Si implantation dose and source–drain separation.

UR - https://www.scopus.com/pages/publications/0035450763

U2 - 10.1016/S0167-9317(01)00432-4

DO - 10.1016/S0167-9317(01)00432-4

M3 - Article

AN - SCOPUS:0035450763

SN - 0167-9317

VL - 57-58

SP - 1003

EP - 1007

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Silicon-nanocrystal-based multiple-tunnel junction devices obtained by a combination of V-groove and ion beam synthesis techniques

Abstract

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