Silicon nanocrystal formation in thin thermal-oxide films by very-low energy Si + ion implantation

P. Normand, D. Tsoukalas, E. Kapetanakis, J. A. Van Den Berg, D. G. Armour, J. Stoemenos

Research output: Contribution to journalArticle

13 Citations (Scopus)


Thin thermally grown silicon oxides are implanted with a high dose of silicon using very low energy ion implantation. After high temperature annealing, the oxides are observed by Transmission Electron Microscopy which reveals the existence of silicon nano-crystals. The electrical properties of metal-oxide-semiconductor devices are then investigated using dynamic conductance as well as dc current measurements.

Original languageEnglish
Pages (from-to)79-82
Number of pages4
JournalMicroelectronic Engineering
Issue number1-4
Publication statusPublished - Jun 1997
Externally publishedYes


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