Silicon nanocrystal formation in thin thermal-oxide films by very-low energy Si + ion implantation

P. Normand, D. Tsoukalas, E. Kapetanakis, J. A. Van Den Berg, D. G. Armour, J. Stoemenos

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Thin thermally grown silicon oxides are implanted with a high dose of silicon using very low energy ion implantation. After high temperature annealing, the oxides are observed by Transmission Electron Microscopy which reveals the existence of silicon nano-crystals. The electrical properties of metal-oxide-semiconductor devices are then investigated using dynamic conductance as well as dc current measurements.

Original languageEnglish
Pages (from-to)79-82
Number of pages4
JournalMicroelectronic Engineering
Volume36
Issue number1-4
DOIs
Publication statusPublished - Jun 1997
Externally publishedYes

Fingerprint

Silicon
Ion implantation
Nanocrystals
Oxide films
oxide films
ion implantation
nanocrystals
MOS devices
Silicon oxides
silicon
Electric current measurement
silicon oxides
semiconductor devices
metal oxide semiconductors
Oxides
Electric properties
electrical properties
Annealing
Transmission electron microscopy
dosage

Cite this

Normand, P. ; Tsoukalas, D. ; Kapetanakis, E. ; Van Den Berg, J. A. ; Armour, D. G. ; Stoemenos, J. / Silicon nanocrystal formation in thin thermal-oxide films by very-low energy Si + ion implantation. In: Microelectronic Engineering. 1997 ; Vol. 36, No. 1-4. pp. 79-82.
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Silicon nanocrystal formation in thin thermal-oxide films by very-low energy Si + ion implantation. / Normand, P.; Tsoukalas, D.; Kapetanakis, E.; Van Den Berg, J. A.; Armour, D. G.; Stoemenos, J.

In: Microelectronic Engineering, Vol. 36, No. 1-4, 06.1997, p. 79-82.

Research output: Contribution to journalArticle

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AU - Normand, P.

AU - Tsoukalas, D.

AU - Kapetanakis, E.

AU - Van Den Berg, J. A.

AU - Armour, D. G.

AU - Stoemenos, J.

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AB - Thin thermally grown silicon oxides are implanted with a high dose of silicon using very low energy ion implantation. After high temperature annealing, the oxides are observed by Transmission Electron Microscopy which reveals the existence of silicon nano-crystals. The electrical properties of metal-oxide-semiconductor devices are then investigated using dynamic conductance as well as dc current measurements.

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JF - Microelectronic Engineering

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