Silicon nanocrystal formation in thin thermal-oxide films by very-low energy Si + ion implantation

P. Normand; D. Tsoukalas; E. Kapetanakis; J. A. Van Den Berg; D. G. Armour; J. Stoemenos

doi:10.1016/S0167-9317(97)00019-1

Silicon nanocrystal formation in thin thermal-oxide films by very-low energy Si + ion implantation

P. Normand, D. Tsoukalas, E. Kapetanakis, J. A. Van Den Berg, D. G. Armour, J. Stoemenos

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Thin thermally grown silicon oxides are implanted with a high dose of silicon using very low energy ion implantation. After high temperature annealing, the oxides are observed by Transmission Electron Microscopy which reveals the existence of silicon nano-crystals. The electrical properties of metal-oxide-semiconductor devices are then investigated using dynamic conductance as well as dc current measurements.

Original language	English
Pages (from-to)	79-82
Number of pages	4
Journal	Microelectronic Engineering
Volume	36
Issue number	1-4
DOIs	https://doi.org/10.1016/S0167-9317(97)00019-1
Publication status	Published - Jun 1997
Externally published	Yes

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10.1016/S0167-9317(97)00019-1

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title = "Silicon nanocrystal formation in thin thermal-oxide films by very-low energy Si + ion implantation",

abstract = "Thin thermally grown silicon oxides are implanted with a high dose of silicon using very low energy ion implantation. After high temperature annealing, the oxides are observed by Transmission Electron Microscopy which reveals the existence of silicon nano-crystals. The electrical properties of metal-oxide-semiconductor devices are then investigated using dynamic conductance as well as dc current measurements.",

author = "P. Normand and D. Tsoukalas and E. Kapetanakis and {Van Den Berg}, {J. A.} and Armour, {D. G.} and J. Stoemenos",

year = "1997",

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journal = "Microelectronic Engineering",

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AU - Normand, P.

AU - Tsoukalas, D.

AU - Kapetanakis, E.

AU - Van Den Berg, J. A.

AU - Armour, D. G.

AU - Stoemenos, J.

PY - 1997/6

Y1 - 1997/6

N2 - Thin thermally grown silicon oxides are implanted with a high dose of silicon using very low energy ion implantation. After high temperature annealing, the oxides are observed by Transmission Electron Microscopy which reveals the existence of silicon nano-crystals. The electrical properties of metal-oxide-semiconductor devices are then investigated using dynamic conductance as well as dc current measurements.

AB - Thin thermally grown silicon oxides are implanted with a high dose of silicon using very low energy ion implantation. After high temperature annealing, the oxides are observed by Transmission Electron Microscopy which reveals the existence of silicon nano-crystals. The electrical properties of metal-oxide-semiconductor devices are then investigated using dynamic conductance as well as dc current measurements.

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U2 - 10.1016/S0167-9317(97)00019-1

DO - 10.1016/S0167-9317(97)00019-1

M3 - Article

AN - SCOPUS:0031150223

VL - 36

SP - 79

EP - 82

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 1-4

ER -

Silicon nanocrystal formation in thin thermal-oxide films by very-low energy Si + ion implantation

Abstract

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