Simulation of Carrier Transport in p-Si/SiGe Quantum Cascade Emitters

Z. Ikonić; P. Harrison; R. W. Kelsall

doi:10.1023/B:JCEL.0000011451.61218.39

Simulation of Carrier Transport in p-Si/SiGe Quantum Cascade Emitters

Z. Ikonić, P. Harrison, R. W. Kelsall

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A detailed analysis of hole transport in cascaded p-Si/SiGe quantum well structures is performed using the rate equation method with thermal balancing. The hole subband structure is calculated within the 6 × 6 k · p model, and used to find carrier and energy relaxation rates due to the alloy disorder, acoustic and optical phonon scattering. The simulation accounts for the in-plane k-space anisotropy of both the hole subband structure and the scattering rates. Results for prototype Si/SiGe cascade emitter structures are compared to those from both the Monte Carlo and the basic, particle rate equation method.

Original language	English
Pages (from-to)	353-356
Number of pages	4
Journal	Journal of Computational Electronics
Volume	2
Issue number	2-4
DOIs	https://doi.org/10.1023/B:JCEL.0000011451.61218.39
Publication status	Published - 1 Dec 2003
Externally published	Yes

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title = "Simulation of Carrier Transport in p-Si/SiGe Quantum Cascade Emitters",

abstract = "A detailed analysis of hole transport in cascaded p-Si/SiGe quantum well structures is performed using the rate equation method with thermal balancing. The hole subband structure is calculated within the 6 × 6 k · p model, and used to find carrier and energy relaxation rates due to the alloy disorder, acoustic and optical phonon scattering. The simulation accounts for the in-plane k-space anisotropy of both the hole subband structure and the scattering rates. Results for prototype Si/SiGe cascade emitter structures are compared to those from both the Monte Carlo and the basic, particle rate equation method.",

keywords = "hole transport, quantum cascade laser, rate equations, SiGe",

author = "Z. Ikoni{\'c} and P. Harrison and Kelsall, {R. W.}",

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T1 - Simulation of Carrier Transport in p-Si/SiGe Quantum Cascade Emitters

AU - Ikonić, Z.

AU - Harrison, P.

AU - Kelsall, R. W.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - A detailed analysis of hole transport in cascaded p-Si/SiGe quantum well structures is performed using the rate equation method with thermal balancing. The hole subband structure is calculated within the 6 × 6 k · p model, and used to find carrier and energy relaxation rates due to the alloy disorder, acoustic and optical phonon scattering. The simulation accounts for the in-plane k-space anisotropy of both the hole subband structure and the scattering rates. Results for prototype Si/SiGe cascade emitter structures are compared to those from both the Monte Carlo and the basic, particle rate equation method.

AB - A detailed analysis of hole transport in cascaded p-Si/SiGe quantum well structures is performed using the rate equation method with thermal balancing. The hole subband structure is calculated within the 6 × 6 k · p model, and used to find carrier and energy relaxation rates due to the alloy disorder, acoustic and optical phonon scattering. The simulation accounts for the in-plane k-space anisotropy of both the hole subband structure and the scattering rates. Results for prototype Si/SiGe cascade emitter structures are compared to those from both the Monte Carlo and the basic, particle rate equation method.

KW - hole transport

KW - quantum cascade laser

KW - rate equations

KW - SiGe

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DO - 10.1023/B:JCEL.0000011451.61218.39

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SP - 353

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JO - Journal of Computational Electronics

JF - Journal of Computational Electronics

SN - 1569-8025

IS - 2-4

ER -

Simulation of Carrier Transport in p-Si/SiGe Quantum Cascade Emitters

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