A detailed analysis of hole transport in cascaded p-Si/SiGe quantum well structures is performed using the rate equation method with thermal balancing. The hole subband structure is calculated within the 6 × 6 k · p model, and used to find carrier and energy relaxation rates due to the alloy disorder, acoustic and optical phonon scattering. The simulation accounts for the in-plane k-space anisotropy of both the hole subband structure and the scattering rates. Results for prototype Si/SiGe cascade emitter structures are compared to those from both the Monte Carlo and the basic, particle rate equation method.
|Number of pages||4|
|Journal||Journal of Computational Electronics|
|Publication status||Published - 1 Dec 2003|