Simulation of hole intersubband scattering, transport, and luminescence in p-GaAs/AlGaAs quantum cascade structures

Z. Ikonić; P. Harrison; R. Steed; M. Matthews; J. Plumridge; M. Frogley; C. Phillips

doi:10.1109/ISLC.2008.4636016

Simulation of hole intersubband scattering, transport, and luminescence in p-GaAs/AlGaAs quantum cascade structures

Z. Ikonić, P. Harrison, R. Steed, M. Matthews, J. Plumridge, M. Frogley, C. Phillips

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Intersubband transitions within the conduction band in semiconductor quantum wells have been widely explored, which eventually led to their application in quantum well infrared photodetectors and quantum cascade lasers (QCLs). There have been considerably fewer studies of hole intersubband transitions, which are more complicated than their electronic counterparts. They are very interesting, however, because of optical activity for both TM and TE light polarization, offering the possibility of both edge and surface-normal emission or absorption. Earlier studies have mostly focused on bound-continuum transitions in GaAs/AlGaAs and Si/SiGe systems for infrared detection. The interest in hole intersubband transitions has been recently renewed in view of their application for mid- and far-infrared emitters, including QCLs. Considerable progress has been made in the design and realization of p-doped Si/SiGe quantum cascades and luminescence has been obtained in the THz [1] and mid-infrared [2] range, although laser action has yet to be demonstrated.

Original language	English
Title of host publication	21st IEEE International Semiconductor Laser Conference, ISLC 2008
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	75-76
Number of pages	2
ISBN (Electronic)	9781424417834
ISBN (Print)	9781424417827
DOIs	https://doi.org/10.1109/ISLC.2008.4636016
Publication status	Published - 30 Sep 2008
Externally published	Yes
Event	21st IEEE International Semiconductor Laser Conference - Sorrento, Italy Duration: 14 Sep 2008 → 18 Sep 2008 Conference number: 21

Publication series

Name	Conference Digest - IEEE International Semiconductor Laser Conference
Publisher	IEEE
ISSN (Print)	0899-9406
ISSN (Electronic)	1947-6981

Conference

Conference	21st IEEE International Semiconductor Laser Conference
Abbreviated title	ISLC 2008
Country/Territory	Italy
City	Sorrento
Period	14/09/08 → 18/09/08

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10.1109/ISLC.2008.4636016Licence: Unspecified

Cite this

Ikonić, Z., Harrison, P., Steed, R., Matthews, M., Plumridge, J., Frogley, M., & Phillips, C. (2008). Simulation of hole intersubband scattering, transport, and luminescence in p-GaAs/AlGaAs quantum cascade structures. In 21st IEEE International Semiconductor Laser Conference, ISLC 2008 (pp. 75-76). [4636016] (Conference Digest - IEEE International Semiconductor Laser Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.2008.4636016

Ikonić, Z. ; Harrison, P. ; Steed, R. et al. / Simulation of hole intersubband scattering, transport, and luminescence in p-GaAs/AlGaAs quantum cascade structures. 21st IEEE International Semiconductor Laser Conference, ISLC 2008. Institute of Electrical and Electronics Engineers Inc., 2008. pp. 75-76 (Conference Digest - IEEE International Semiconductor Laser Conference).

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title = "Simulation of hole intersubband scattering, transport, and luminescence in p-GaAs/AlGaAs quantum cascade structures",

abstract = "Intersubband transitions within the conduction band in semiconductor quantum wells have been widely explored, which eventually led to their application in quantum well infrared photodetectors and quantum cascade lasers (QCLs). There have been considerably fewer studies of hole intersubband transitions, which are more complicated than their electronic counterparts. They are very interesting, however, because of optical activity for both TM and TE light polarization, offering the possibility of both edge and surface-normal emission or absorption. Earlier studies have mostly focused on bound-continuum transitions in GaAs/AlGaAs and Si/SiGe systems for infrared detection. The interest in hole intersubband transitions has been recently renewed in view of their application for mid- and far-infrared emitters, including QCLs. Considerable progress has been made in the design and realization of p-doped Si/SiGe quantum cascades and luminescence has been obtained in the THz [1] and mid-infrared [2] range, although laser action has yet to be demonstrated.",

keywords = "Quantum cascade lasers, Scattering, Gallium arsenide, Temperature measurement, Absorption, Silicon, Silicon germanium",

author = "Z. Ikoni{\'c} and P. Harrison and R. Steed and M. Matthews and J. Plumridge and M. Frogley and C. Phillips",

year = "2008",

month = sep,

day = "30",

doi = "10.1109/ISLC.2008.4636016",

language = "English",

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Ikonić, Z, Harrison, P, Steed, R, Matthews, M, Plumridge, J, Frogley, M & Phillips, C 2008, Simulation of hole intersubband scattering, transport, and luminescence in p-GaAs/AlGaAs quantum cascade structures. in 21st IEEE International Semiconductor Laser Conference, ISLC 2008., 4636016, Conference Digest - IEEE International Semiconductor Laser Conference, Institute of Electrical and Electronics Engineers Inc., pp. 75-76, 21st IEEE International Semiconductor Laser Conference, Sorrento, Italy, 14/09/08. https://doi.org/10.1109/ISLC.2008.4636016

Simulation of hole intersubband scattering, transport, and luminescence in p-GaAs/AlGaAs quantum cascade structures. / Ikonić, Z.; Harrison, P.; Steed, R. et al.

21st IEEE International Semiconductor Laser Conference, ISLC 2008. Institute of Electrical and Electronics Engineers Inc., 2008. p. 75-76 4636016 (Conference Digest - IEEE International Semiconductor Laser Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Simulation of hole intersubband scattering, transport, and luminescence in p-GaAs/AlGaAs quantum cascade structures

AU - Ikonić, Z.

AU - Harrison, P.

AU - Steed, R.

AU - Matthews, M.

AU - Plumridge, J.

AU - Frogley, M.

AU - Phillips, C.

N1 - Conference code: 21

PY - 2008/9/30

Y1 - 2008/9/30

N2 - Intersubband transitions within the conduction band in semiconductor quantum wells have been widely explored, which eventually led to their application in quantum well infrared photodetectors and quantum cascade lasers (QCLs). There have been considerably fewer studies of hole intersubband transitions, which are more complicated than their electronic counterparts. They are very interesting, however, because of optical activity for both TM and TE light polarization, offering the possibility of both edge and surface-normal emission or absorption. Earlier studies have mostly focused on bound-continuum transitions in GaAs/AlGaAs and Si/SiGe systems for infrared detection. The interest in hole intersubband transitions has been recently renewed in view of their application for mid- and far-infrared emitters, including QCLs. Considerable progress has been made in the design and realization of p-doped Si/SiGe quantum cascades and luminescence has been obtained in the THz [1] and mid-infrared [2] range, although laser action has yet to be demonstrated.

AB - Intersubband transitions within the conduction band in semiconductor quantum wells have been widely explored, which eventually led to their application in quantum well infrared photodetectors and quantum cascade lasers (QCLs). There have been considerably fewer studies of hole intersubband transitions, which are more complicated than their electronic counterparts. They are very interesting, however, because of optical activity for both TM and TE light polarization, offering the possibility of both edge and surface-normal emission or absorption. Earlier studies have mostly focused on bound-continuum transitions in GaAs/AlGaAs and Si/SiGe systems for infrared detection. The interest in hole intersubband transitions has been recently renewed in view of their application for mid- and far-infrared emitters, including QCLs. Considerable progress has been made in the design and realization of p-doped Si/SiGe quantum cascades and luminescence has been obtained in the THz [1] and mid-infrared [2] range, although laser action has yet to be demonstrated.

KW - Quantum cascade lasers

KW - Scattering

KW - Gallium arsenide

KW - Temperature measurement

KW - Absorption

KW - Silicon

KW - Silicon germanium

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DO - 10.1109/ISLC.2008.4636016

M3 - Conference contribution

AN - SCOPUS:56749132206

SN - 9781424417827

T3 - Conference Digest - IEEE International Semiconductor Laser Conference

SP - 75

EP - 76

BT - 21st IEEE International Semiconductor Laser Conference, ISLC 2008

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 21st IEEE International Semiconductor Laser Conference

Y2 - 14 September 2008 through 18 September 2008

ER -

Ikonić Z, Harrison P, Steed R, Matthews M, Plumridge J, Frogley M et al. Simulation of hole intersubband scattering, transport, and luminescence in p-GaAs/AlGaAs quantum cascade structures. In 21st IEEE International Semiconductor Laser Conference, ISLC 2008. Institute of Electrical and Electronics Engineers Inc. 2008. p. 75-76. 4636016. (Conference Digest - IEEE International Semiconductor Laser Conference). doi: 10.1109/ISLC.2008.4636016

Simulation of hole intersubband scattering, transport, and luminescence in p-GaAs/AlGaAs quantum cascade structures

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