A formation and thermal re-crystallization of amorphous zones on crystalline Si which have been created by single ion impacts with a range of species and energies have been studied. Different kinds of defects, including point defects and dislocation loops, were observed. The role of bond defect, or vacancy-interstitial pair in amorphization and re-crystallization of silicon has been discussed.
|Number of pages||4|
|Journal||Bulletin of the Russian Academy of Sciences: Physics|
|Publication status||Published - 2006|