Single ion-induced amorphous zones in silicon: Formation and re-crystallization

S. E. Donnelly, P. D. Edmondson, R. C. Birtcher, V. M. Vishnyakov, G. Carter

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A formation and thermal re-crystallization of amorphous zones on crystalline Si which have been created by single ion impacts with a range of species and energies have been studied. Different kinds of defects, including point defects and dislocation loops, were observed. The role of bond defect, or vacancy-interstitial pair in amorphization and re-crystallization of silicon has been discussed.

Original languageEnglish
Pages (from-to)893-896
Number of pages4
JournalBulletin of the Russian Academy of Sciences: Physics
Volume70
Issue number6
Publication statusPublished - 2006
Externally publishedYes

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