Single ion-induced amorphous zones in silicon

Formation and re-crystallization

S. E. Donnelly, P. D. Edmondson, R. C. Birtcher, V. M. Vishnyakov, G. Carter

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A formation and thermal re-crystallization of amorphous zones on crystalline Si which have been created by single ion impacts with a range of species and energies have been studied. Different kinds of defects, including point defects and dislocation loops, were observed. The role of bond defect, or vacancy-interstitial pair in amorphization and re-crystallization of silicon has been discussed.

Original languageEnglish
Pages (from-to)893-896
Number of pages4
JournalBulletin of the Russian Academy of Sciences: Physics
Volume70
Issue number6
Publication statusPublished - 2006
Externally publishedYes

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ion impact
defects
silicon
point defects
interstitials
ions
energy

Cite this

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abstract = "A formation and thermal re-crystallization of amorphous zones on crystalline Si which have been created by single ion impacts with a range of species and energies have been studied. Different kinds of defects, including point defects and dislocation loops, were observed. The role of bond defect, or vacancy-interstitial pair in amorphization and re-crystallization of silicon has been discussed.",
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Single ion-induced amorphous zones in silicon : Formation and re-crystallization. / Donnelly, S. E.; Edmondson, P. D.; Birtcher, R. C.; Vishnyakov, V. M.; Carter, G.

In: Bulletin of the Russian Academy of Sciences: Physics, Vol. 70, No. 6, 2006, p. 893-896.

Research output: Contribution to journalArticle

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T1 - Single ion-induced amorphous zones in silicon

T2 - Formation and re-crystallization

AU - Donnelly, S. E.

AU - Edmondson, P. D.

AU - Birtcher, R. C.

AU - Vishnyakov, V. M.

AU - Carter, G.

PY - 2006

Y1 - 2006

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AB - A formation and thermal re-crystallization of amorphous zones on crystalline Si which have been created by single ion impacts with a range of species and energies have been studied. Different kinds of defects, including point defects and dislocation loops, were observed. The role of bond defect, or vacancy-interstitial pair in amorphization and re-crystallization of silicon has been discussed.

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M3 - Article

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EP - 896

JO - Bulletin of the Russian Academy of Sciences: Physics

JF - Bulletin of the Russian Academy of Sciences: Physics

SN - 1062-8738

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ER -