Single ion-induced amorphous zones in silicon: Formation and re-crystallization

S. E. Donnelly; P. D. Edmondson; R. C. Birtcher; V. M. Vishnyakov; G. Carter

Single ion-induced amorphous zones in silicon: Formation and re-crystallization

S. E. Donnelly, P. D. Edmondson, R. C. Birtcher, V. M. Vishnyakov, G. Carter

Research output: Contribution to journal › Article › peer-review

Abstract

A formation and thermal re-crystallization of amorphous zones on crystalline Si which have been created by single ion impacts with a range of species and energies have been studied. Different kinds of defects, including point defects and dislocation loops, were observed. The role of bond defect, or vacancy-interstitial pair in amorphization and re-crystallization of silicon has been discussed.

Original language	English
Pages (from-to)	893-896
Number of pages	4
Journal	Bulletin of the Russian Academy of Sciences: Physics
Volume	70
Issue number	6
Publication status	Published - 2006
Externally published	Yes

Cite this

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title = "Single ion-induced amorphous zones in silicon: Formation and re-crystallization",

abstract = "A formation and thermal re-crystallization of amorphous zones on crystalline Si which have been created by single ion impacts with a range of species and energies have been studied. Different kinds of defects, including point defects and dislocation loops, were observed. The role of bond defect, or vacancy-interstitial pair in amorphization and re-crystallization of silicon has been discussed.",

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year = "2006",

language = "English",

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pages = "893--896",

journal = "Bulletin of the Russian Academy of Sciences: Physics",

issn = "1062-8738",

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T1 - Single ion-induced amorphous zones in silicon

T2 - Formation and re-crystallization

AU - Donnelly, S. E.

AU - Edmondson, P. D.

AU - Birtcher, R. C.

AU - Vishnyakov, V. M.

AU - Carter, G.

PY - 2006

Y1 - 2006

N2 - A formation and thermal re-crystallization of amorphous zones on crystalline Si which have been created by single ion impacts with a range of species and energies have been studied. Different kinds of defects, including point defects and dislocation loops, were observed. The role of bond defect, or vacancy-interstitial pair in amorphization and re-crystallization of silicon has been discussed.

AB - A formation and thermal re-crystallization of amorphous zones on crystalline Si which have been created by single ion impacts with a range of species and energies have been studied. Different kinds of defects, including point defects and dislocation loops, were observed. The role of bond defect, or vacancy-interstitial pair in amorphization and re-crystallization of silicon has been discussed.

UR - https://www.scopus.com/pages/publications/34247160449

UR - http://pleiades.online/en/journals/search/?name=bullphys

M3 - Article

AN - SCOPUS:34247160449

SN - 1062-8738

VL - 70

SP - 893

EP - 896

JO - Bulletin of the Russian Academy of Sciences: Physics

JF - Bulletin of the Russian Academy of Sciences: Physics

IS - 6

ER -

Single ion-induced amorphous zones in silicon: Formation and re-crystallization

Abstract

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