Si/SiGe quantum-cascade emitters for terahertz applications

D. J. Paul, S. A. Lynch, R. Bates, Z. Ikonić, R. W. Kelsall, P. Harrison, D. J. Norris, S. L. Liew, A. G. Cullis, D. D. Arnone, C. R. Pidgeon, P. Murzyn, J. P.R. Wells, I. V. Bradley

Research output: Contribution to journalConference articlepeer-review

19 Citations (Scopus)


The quantum cascade laser provides one possible method of realizing high efficiency light emission from indirect band gap materials such as silicon. Strain-symmetrized Si/SiGe samples designed to investigate the intersubband properties of quantum wells are examined. Electroluminescence data from Si/SiGe quantum-cascade staircases demonstrating edge emission from heavy-hole to heavy-hole transitions and light-hole to heavy-hole transitions are presented. In surface-normal emission only light-hole to heavy-hole electroluminescence is observed at 2.9 THz (103 μm wavelength) as predicted by theory. Modulation-doped SiGe quantum well samples are also investigated to determine the underlying physics in the system. Results of picosecond time resolved studies of the dynamics of the intersubband transitions using a free electron laser are presented which show approximately constant relaxation times of 10 ps below 100 K.

Original languageEnglish
Pages (from-to)147-155
Number of pages9
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number1
Early online date5 Oct 2002
Publication statusPublished - 1 Jan 2003
Externally publishedYes
Event12th International Winterschool on New Developments in Solids State Physics: "Low- Dimensional Systems: From 2D to Molecules" - Mauterndorf, Austria
Duration: 25 Feb 20021 Mar 2002


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