Si/SiGe quantum-cascade emitters for terahertz applications

D. J. Paul; S. A. Lynch; R. Bates; Z. Ikonić; R. W. Kelsall; P. Harrison; D. J. Norris; S. L. Liew; A. G. Cullis; D. D. Arnone; C. R. Pidgeon; P. Murzyn; J. P.R. Wells; I. V. Bradley

doi:10.1016/S1386-9477(02)00590-8

Si/SiGe quantum-cascade emitters for terahertz applications

D. J. Paul, S. A. Lynch, R. Bates, Z. Ikonić, R. W. Kelsall, P. Harrison, D. J. Norris, S. L. Liew, A. G. Cullis, D. D. Arnone, C. R. Pidgeon, P. Murzyn, J. P.R. Wells, I. V. Bradley

Research output: Contribution to journal › Conference article › peer-review

19 Citations (Scopus)

Abstract

The quantum cascade laser provides one possible method of realizing high efficiency light emission from indirect band gap materials such as silicon. Strain-symmetrized Si/SiGe samples designed to investigate the intersubband properties of quantum wells are examined. Electroluminescence data from Si/SiGe quantum-cascade staircases demonstrating edge emission from heavy-hole to heavy-hole transitions and light-hole to heavy-hole transitions are presented. In surface-normal emission only light-hole to heavy-hole electroluminescence is observed at 2.9 THz (103 μm wavelength) as predicted by theory. Modulation-doped SiGe quantum well samples are also investigated to determine the underlying physics in the system. Results of picosecond time resolved studies of the dynamics of the intersubband transitions using a free electron laser are presented which show approximately constant relaxation times of 10 ps below 100 K.

Original language	English
Pages (from-to)	147-155
Number of pages	9
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	16
Issue number	1
Early online date	5 Oct 2002
DOIs	https://doi.org/10.1016/S1386-9477(02)00590-8
Publication status	Published - 1 Jan 2003
Externally published	Yes
Event	12th International Winterschool on New Developments in Solids State Physics: "Low- Dimensional Systems: From 2D to Molecules" - Mauterndorf, Austria Duration: 25 Feb 2002 → 1 Mar 2002

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Paul, D. J., Lynch, S. A., Bates, R., Ikonić, Z., Kelsall, R. W., Harrison, P., Norris, D. J., Liew, S. L., Cullis, A. G., Arnone, D. D., Pidgeon, C. R., Murzyn, P., Wells, J. P. R., & Bradley, I. V. (2003). Si/SiGe quantum-cascade emitters for terahertz applications. Physica E: Low-Dimensional Systems and Nanostructures, 16(1), 147-155. https://doi.org/10.1016/S1386-9477(02)00590-8

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title = "Si/SiGe quantum-cascade emitters for terahertz applications",

abstract = "The quantum cascade laser provides one possible method of realizing high efficiency light emission from indirect band gap materials such as silicon. Strain-symmetrized Si/SiGe samples designed to investigate the intersubband properties of quantum wells are examined. Electroluminescence data from Si/SiGe quantum-cascade staircases demonstrating edge emission from heavy-hole to heavy-hole transitions and light-hole to heavy-hole transitions are presented. In surface-normal emission only light-hole to heavy-hole electroluminescence is observed at 2.9 THz (103 μm wavelength) as predicted by theory. Modulation-doped SiGe quantum well samples are also investigated to determine the underlying physics in the system. Results of picosecond time resolved studies of the dynamics of the intersubband transitions using a free electron laser are presented which show approximately constant relaxation times of 10 ps below 100 K.",

keywords = "Electroluminescence, Intersubband, Quantum cascade, Si/SiGe",

author = "Paul, {D. J.} and Lynch, {S. A.} and R. Bates and Z. Ikoni{\'c} and Kelsall, {R. W.} and P. Harrison and Norris, {D. J.} and Liew, {S. L.} and Cullis, {A. G.} and Arnone, {D. D.} and Pidgeon, {C. R.} and P. Murzyn and Wells, {J. P.R.} and Bradley, {I. V.}",

note = "Funding Information: This work was funded by US DARPA under Air Force contract F-19628-99-C-0074. The authors would like to thank David Robbins, Richard Soref and Edgar Martinez for useful discussions and support.; 12th International Winterschool on New Developments in Solids State Physics : {"}Low- Dimensional Systems: From 2D to Molecules{"} ; Conference date: 25-02-2002 Through 01-03-2002",

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doi = "10.1016/S1386-9477(02)00590-8",

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T1 - Si/SiGe quantum-cascade emitters for terahertz applications

AU - Paul, D. J.

AU - Lynch, S. A.

AU - Bates, R.

AU - Ikonić, Z.

AU - Kelsall, R. W.

AU - Harrison, P.

AU - Norris, D. J.

AU - Liew, S. L.

AU - Cullis, A. G.

AU - Arnone, D. D.

AU - Pidgeon, C. R.

AU - Murzyn, P.

AU - Wells, J. P.R.

AU - Bradley, I. V.

N1 - Funding Information: This work was funded by US DARPA under Air Force contract F-19628-99-C-0074. The authors would like to thank David Robbins, Richard Soref and Edgar Martinez for useful discussions and support.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - The quantum cascade laser provides one possible method of realizing high efficiency light emission from indirect band gap materials such as silicon. Strain-symmetrized Si/SiGe samples designed to investigate the intersubband properties of quantum wells are examined. Electroluminescence data from Si/SiGe quantum-cascade staircases demonstrating edge emission from heavy-hole to heavy-hole transitions and light-hole to heavy-hole transitions are presented. In surface-normal emission only light-hole to heavy-hole electroluminescence is observed at 2.9 THz (103 μm wavelength) as predicted by theory. Modulation-doped SiGe quantum well samples are also investigated to determine the underlying physics in the system. Results of picosecond time resolved studies of the dynamics of the intersubband transitions using a free electron laser are presented which show approximately constant relaxation times of 10 ps below 100 K.

AB - The quantum cascade laser provides one possible method of realizing high efficiency light emission from indirect band gap materials such as silicon. Strain-symmetrized Si/SiGe samples designed to investigate the intersubband properties of quantum wells are examined. Electroluminescence data from Si/SiGe quantum-cascade staircases demonstrating edge emission from heavy-hole to heavy-hole transitions and light-hole to heavy-hole transitions are presented. In surface-normal emission only light-hole to heavy-hole electroluminescence is observed at 2.9 THz (103 μm wavelength) as predicted by theory. Modulation-doped SiGe quantum well samples are also investigated to determine the underlying physics in the system. Results of picosecond time resolved studies of the dynamics of the intersubband transitions using a free electron laser are presented which show approximately constant relaxation times of 10 ps below 100 K.

KW - Electroluminescence

KW - Intersubband

KW - Quantum cascade

KW - Si/SiGe

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DO - 10.1016/S1386-9477(02)00590-8

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AN - SCOPUS:0037949154

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VL - 16

SP - 147

EP - 155

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1

T2 - 12th International Winterschool on New Developments in Solids State Physics

Y2 - 25 February 2002 through 1 March 2002

ER -

Si/SiGe quantum-cascade emitters for terahertz applications

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