Si/SiGe Terahertz Quantum Cascade Emitters

D. J. Paul; S. A. Lynch; P. Townsend; Z. Ikonic; R. W. Kelsall; P. Harrison; S. L. Liew; D. J. Norris; A. G. Cullis; J. Zhang; H. S. Gamble; W. R. Tribe; D. D. Arnone

doi:10.1109/ISDRS.2003.1271976

Si/SiGe Terahertz Quantum Cascade Emitters

D. J. Paul, S. A. Lynch, P. Townsend, Z. Ikonic, R. W. Kelsall, P. Harrison, S. L. Liew, D. J. Norris, A. G. Cullis, J. Zhang, H. S. Gamble, W. R. Tribe, D. D. Arnone

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

While there are many potential applications forTHz radiation including medical imaging, pollution monitoring, security screening and bioweapons detection¹, this part of the electromagnetic spectrum has been under ultilised due to a lack of cheap and practical sources and detectors. III-V quantum cascades lasers have recently been demonstrated at a number of THz frequencies but only operate below 150 K². Si/SiGe quantum cascade lasers if realised could potentially have a number of significant advantages. The nature of the Si-Ge bond results in negligible polar optical phonon scattering which produces significantly enhanced intersubband lifetimes with almost no reduction in lifetime up to room temperature. The lifetimes in III-V materials demonstrate polar optical phonon scattering dominating above only 40 K.

Original language	English
Title of host publication	2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	20-21
Number of pages	2
ISBN (Electronic)	0780381394, 9780780381391
DOIs	https://doi.org/10.1109/ISDRS.2003.1271976
Publication status	Published - 15 Mar 2004
Externally published	Yes
Event	International Semiconductor Device Research Symposium - Washington, United States Duration: 10 Dec 2003 → 12 Dec 2003

Conference

Conference	International Semiconductor Device Research Symposium
Abbreviated title	ISDRS 2003
Country/Territory	United States
City	Washington
Period	10/12/03 → 12/12/03

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Paul, D. J., Lynch, S. A., Townsend, P., Ikonic, Z., Kelsall, R. W., Harrison, P., Liew, S. L., Norris, D. J., Cullis, A. G., Zhang, J., Gamble, H. S., Tribe, W. R., & Arnone, D. D. (2004). Si/SiGe Terahertz Quantum Cascade Emitters. In 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings (pp. 20-21). [1271976] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISDRS.2003.1271976

@inproceedings{06d539e3f4c54b4b9a6ac28a9dfc1cc5,

title = "Si/SiGe Terahertz Quantum Cascade Emitters",

abstract = "While there are many potential applications forTHz radiation including medical imaging, pollution monitoring, security screening and bioweapons detection1, this part of the electromagnetic spectrum has been under ultilised due to a lack of cheap and practical sources and detectors. III-V quantum cascades lasers have recently been demonstrated at a number of THz frequencies but only operate below 150 K2. Si/SiGe quantum cascade lasers if realised could potentially have a number of significant advantages. The nature of the Si-Ge bond results in negligible polar optical phonon scattering which produces significantly enhanced intersubband lifetimes with almost no reduction in lifetime up to room temperature. The lifetimes in III-V materials demonstrate polar optical phonon scattering dominating above only 40 K.",

keywords = "Silicon germanium, Germanium silicon alloys, Polarization, Quantum cascade lasers, Electroluminescence, Frequency, Tellurium",

author = "Paul, {D. J.} and Lynch, {S. A.} and P. Townsend and Z. Ikonic and Kelsall, {R. W.} and P. Harrison and Liew, {S. L.} and Norris, {D. J.} and Cullis, {A. G.} and J. Zhang and Gamble, {H. S.} and Tribe, {W. R.} and Arnone, {D. D.}",

year = "2004",

month = mar,

day = "15",

doi = "10.1109/ISDRS.2003.1271976",

language = "English",

pages = "20--21",

booktitle = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "International Semiconductor Device Research Symposium, ISDRS 2003 ; Conference date: 10-12-2003 Through 12-12-2003",

}

Paul, DJ, Lynch, SA, Townsend, P, Ikonic, Z, Kelsall, RW, Harrison, P, Liew, SL, Norris, DJ, Cullis, AG, Zhang, J, Gamble, HS, Tribe, WR & Arnone, DD 2004, Si/SiGe Terahertz Quantum Cascade Emitters. in 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings., 1271976, Institute of Electrical and Electronics Engineers Inc., pp. 20-21, International Semiconductor Device Research Symposium, Washington, District of Columbia, United States, 10/12/03. https://doi.org/10.1109/ISDRS.2003.1271976

TY - GEN

T1 - Si/SiGe Terahertz Quantum Cascade Emitters

AU - Paul, D. J.

AU - Lynch, S. A.

AU - Townsend, P.

AU - Ikonic, Z.

AU - Kelsall, R. W.

AU - Harrison, P.

AU - Liew, S. L.

AU - Norris, D. J.

AU - Cullis, A. G.

AU - Zhang, J.

AU - Gamble, H. S.

AU - Tribe, W. R.

AU - Arnone, D. D.

PY - 2004/3/15

Y1 - 2004/3/15

N2 - While there are many potential applications forTHz radiation including medical imaging, pollution monitoring, security screening and bioweapons detection1, this part of the electromagnetic spectrum has been under ultilised due to a lack of cheap and practical sources and detectors. III-V quantum cascades lasers have recently been demonstrated at a number of THz frequencies but only operate below 150 K2. Si/SiGe quantum cascade lasers if realised could potentially have a number of significant advantages. The nature of the Si-Ge bond results in negligible polar optical phonon scattering which produces significantly enhanced intersubband lifetimes with almost no reduction in lifetime up to room temperature. The lifetimes in III-V materials demonstrate polar optical phonon scattering dominating above only 40 K.

AB - While there are many potential applications forTHz radiation including medical imaging, pollution monitoring, security screening and bioweapons detection1, this part of the electromagnetic spectrum has been under ultilised due to a lack of cheap and practical sources and detectors. III-V quantum cascades lasers have recently been demonstrated at a number of THz frequencies but only operate below 150 K2. Si/SiGe quantum cascade lasers if realised could potentially have a number of significant advantages. The nature of the Si-Ge bond results in negligible polar optical phonon scattering which produces significantly enhanced intersubband lifetimes with almost no reduction in lifetime up to room temperature. The lifetimes in III-V materials demonstrate polar optical phonon scattering dominating above only 40 K.

KW - Silicon germanium

KW - Germanium silicon alloys

KW - Polarization

KW - Quantum cascade lasers

KW - Electroluminescence

KW - Frequency

KW - Tellurium

UR - http://www.scopus.com/inward/record.url?scp=84945299408&partnerID=8YFLogxK

U2 - 10.1109/ISDRS.2003.1271976

DO - 10.1109/ISDRS.2003.1271976

M3 - Conference contribution

AN - SCOPUS:84945299408

SP - 20

EP - 21

BT - 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - International Semiconductor Device Research Symposium

Y2 - 10 December 2003 through 12 December 2003

ER -

Si/SiGe Terahertz Quantum Cascade Emitters

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