Abstract
While there are many potential applications forTHz radiation including medical imaging, pollution monitoring, security screening and bioweapons detection1, this part of the electromagnetic spectrum has been under ultilised due to a lack of cheap and practical sources and detectors. III-V quantum cascades lasers have recently been demonstrated at a number of THz frequencies but only operate below 150 K2. Si/SiGe quantum cascade lasers if realised could potentially have a number of significant advantages. The nature of the Si-Ge bond results in negligible polar optical phonon scattering which produces significantly enhanced intersubband lifetimes with almost no reduction in lifetime up to room temperature. The lifetimes in III-V materials demonstrate polar optical phonon scattering dominating above only 40 K.
Original language | English |
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Title of host publication | 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 20-21 |
Number of pages | 2 |
ISBN (Electronic) | 0780381394, 9780780381391 |
DOIs | |
Publication status | Published - 15 Mar 2004 |
Externally published | Yes |
Event | International Semiconductor Device Research Symposium - Washington, United States Duration: 10 Dec 2003 → 12 Dec 2003 |
Conference
Conference | International Semiconductor Device Research Symposium |
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Abbreviated title | ISDRS 2003 |
Country/Territory | United States |
City | Washington |
Period | 10/12/03 → 12/12/03 |