Si/SiGe Terahertz Quantum Cascade Emitters

D. J. Paul, S. A. Lynch, P. Townsend, Z. Ikonic, R. W. Kelsall, P. Harrison, S. L. Liew, D. J. Norris, A. G. Cullis, J. Zhang, H. S. Gamble, W. R. Tribe, D. D. Arnone

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Citations (Scopus)


While there are many potential applications forTHz radiation including medical imaging, pollution monitoring, security screening and bioweapons detection1, this part of the electromagnetic spectrum has been under ultilised due to a lack of cheap and practical sources and detectors. III-V quantum cascades lasers have recently been demonstrated at a number of THz frequencies but only operate below 150 K2. Si/SiGe quantum cascade lasers if realised could potentially have a number of significant advantages. The nature of the Si-Ge bond results in negligible polar optical phonon scattering which produces significantly enhanced intersubband lifetimes with almost no reduction in lifetime up to room temperature. The lifetimes in III-V materials demonstrate polar optical phonon scattering dominating above only 40 K.

Original languageEnglish
Title of host publication2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages2
ISBN (Electronic)0780381394, 9780780381391
Publication statusPublished - 15 Mar 2004
Externally publishedYes
EventInternational Semiconductor Device Research Symposium - Washington, United States
Duration: 10 Dec 200312 Dec 2003


ConferenceInternational Semiconductor Device Research Symposium
Abbreviated titleISDRS 2003
Country/TerritoryUnited States


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