Solid-phase epitaxial regrowth of a shallow amorphised Si layer studied by X-ray and medium energy ion scattering

L. Capello, T. H. Metzger, M. Werner, J. A. Van Den Berg, M. Servidori, M. Herden, T. Feudel

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Solid-phase epitaxial regrowth (SPER) of Si amorphised by ion implantation is considered as a potential solution for the fabrication of ultra-shallow junctions for future technology nodes of Si CMOS devices. In the present work, a series of Epi-Si samples amorphised by ultra-low energy As implantation was investigated by monitoring the lattice recovery during SPER and the simultaneous evolution of implantation-induced defects using the combined capabilities of X-ray scattering methods and medium energy ion scattering. Annealing temperatures between 550 and 700 °C and times from 10 to 200 s were chosen to characterise different stages of the SPER as well as the onset of defect annealing. Small defect clusters were detected in the end-of-range damage region of the implanted samples and layer-by-layer regrowth of the amorphised region was clearly observed. The complementary nature of the information obtained by the two methods is demonstrated. This study confirms that the high dose As implant causes the slowing down of the SPER rate in Si.

Original languageEnglish
Pages (from-to)200-204
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume124-125
Issue numberSUPPL.
Early online date26 Sep 2005
DOIs
Publication statusPublished - 5 Dec 2005
Externally publishedYes

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ion scattering
solid phases
Scattering
Ions
X rays
Defects
implantation
defects
x rays
Annealing
annealing
energy
X ray scattering
Ion implantation
ion implantation
CMOS
recovery
damage
Fabrication
Recovery

Cite this

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abstract = "Solid-phase epitaxial regrowth (SPER) of Si amorphised by ion implantation is considered as a potential solution for the fabrication of ultra-shallow junctions for future technology nodes of Si CMOS devices. In the present work, a series of Epi-Si samples amorphised by ultra-low energy As implantation was investigated by monitoring the lattice recovery during SPER and the simultaneous evolution of implantation-induced defects using the combined capabilities of X-ray scattering methods and medium energy ion scattering. Annealing temperatures between 550 and 700 °C and times from 10 to 200 s were chosen to characterise different stages of the SPER as well as the onset of defect annealing. Small defect clusters were detected in the end-of-range damage region of the implanted samples and layer-by-layer regrowth of the amorphised region was clearly observed. The complementary nature of the information obtained by the two methods is demonstrated. This study confirms that the high dose As implant causes the slowing down of the SPER rate in Si.",
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Solid-phase epitaxial regrowth of a shallow amorphised Si layer studied by X-ray and medium energy ion scattering. / Capello, L.; Metzger, T. H.; Werner, M.; Van Den Berg, J. A.; Servidori, M.; Herden, M.; Feudel, T.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 124-125, No. SUPPL., 05.12.2005, p. 200-204.

Research output: Contribution to journalArticle

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T1 - Solid-phase epitaxial regrowth of a shallow amorphised Si layer studied by X-ray and medium energy ion scattering

AU - Capello, L.

AU - Metzger, T. H.

AU - Werner, M.

AU - Van Den Berg, J. A.

AU - Servidori, M.

AU - Herden, M.

AU - Feudel, T.

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