Stability of single free particles against spatial localization through magnetic polaron formation

W. E. Hagston; P. Harrison; J. Goodwin

doi:10.1016/0038-1098(93)90501-D

Stability of single free particles against spatial localization through magnetic polaron formation

W. E. Hagston, P. Harrison, J. Goodwin

University of Hull

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We present a quantum-mechanical treatment of the spatial localization of single free carriers resulting from the large exchange interaction between them and the lattice magnetic ions in dilute magnetic semiconductors. The formalism is applied to the Cd_1-xMn_xTe system, and the implications for the observation of spatial localization of single free carriers described.

Original language	English
Pages (from-to)	261-265
Number of pages	5
Journal	Solid State Communications
Volume	86
Issue number	4
DOIs	https://doi.org/10.1016/0038-1098(93)90501-D
Publication status	Published - 1 Apr 1993
Externally published	Yes

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title = "Stability of single free particles against spatial localization through magnetic polaron formation",

abstract = "We present a quantum-mechanical treatment of the spatial localization of single free carriers resulting from the large exchange interaction between them and the lattice magnetic ions in dilute magnetic semiconductors. The formalism is applied to the Cd1-xMnxTe system, and the implications for the observation of spatial localization of single free carriers described.",

keywords = "Quantum mechanics, lattice magnetic ions, dilute magnetic semiconductors",

author = "Hagston, \{W. E.\} and P. Harrison and J. Goodwin",

year = "1993",

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doi = "10.1016/0038-1098(93)90501-D",

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T1 - Stability of single free particles against spatial localization through magnetic polaron formation

AU - Hagston, W. E.

AU - Harrison, P.

AU - Goodwin, J.

PY - 1993/4/1

Y1 - 1993/4/1

N2 - We present a quantum-mechanical treatment of the spatial localization of single free carriers resulting from the large exchange interaction between them and the lattice magnetic ions in dilute magnetic semiconductors. The formalism is applied to the Cd1-xMnxTe system, and the implications for the observation of spatial localization of single free carriers described.

AB - We present a quantum-mechanical treatment of the spatial localization of single free carriers resulting from the large exchange interaction between them and the lattice magnetic ions in dilute magnetic semiconductors. The formalism is applied to the Cd1-xMnxTe system, and the implications for the observation of spatial localization of single free carriers described.

KW - Quantum mechanics

KW - lattice magnetic ions

KW - dilute magnetic semiconductors

UR - https://www.scopus.com/pages/publications/0027576774

U2 - 10.1016/0038-1098(93)90501-D

DO - 10.1016/0038-1098(93)90501-D

M3 - Article

AN - SCOPUS:0027576774

SN - 0038-1098

VL - 86

SP - 261

EP - 265

JO - Solid State Communications

JF - Solid State Communications

IS - 4

ER -

Stability of single free particles against spatial localization through magnetic polaron formation

Abstract

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