Abstract
We present experimental and theoretical investigations of the bias-dependent spectral shift of the photoresponse in InAs/InxGa 1-xAs quantum-dots-in-a-well structures. Experimental results show that the wavelength response of the transition from the quantum dot ground state to quantum well states can be Stark-shifted by ∼15% by changing the applied bias between -1 V and +1 V. A theoretical model based on the 8-band k p method fits our experimental data well using realistic dot parameters. We also demonstrate an increase in the operating wavelength and a reduced bias-dependent spectral shift for samples containing dots formed by depositing less InAs during growth.
Original language | English |
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Article number | 004 |
Pages (from-to) | 5537-5540 |
Number of pages | 4 |
Journal | Journal of Physics D: Applied Physics |
Volume | 40 |
Issue number | 18 |
Early online date | 30 Aug 2007 |
DOIs | |
Publication status | Published - 21 Sep 2007 |
Externally published | Yes |
Event | 25th Anniversary Meeting of the Institute of Physics Tribology Group - London, United Kingdom Duration: 1 Feb 2006 → 1 Feb 2006 Conference number: 25 |