Strong heavy-to-light hole intersubband absorption in the valence band of carbon-doped GaAs/AlAs superlattices

M. I. Hossain, Z. Ikonic, J. Watson, J. Shao, P. Harrison, M. J. Manfra, O. Malis

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Abstract

We report strong mid-infrared absorption of in-plane polarized light due to heavy-to-light hole intersubband transitions in the valence band of C-doped GaAs quantum wells with AlAs barriers. The transition energies are well reproduced by theoretical calculations including layer inter-diffusion. The inter-diffusion length was estimated to be 8 ± 2 Å, a value that is consistent with electron microscopy measurements. These results highlight the importance of modeling the nanoscale structure of the semiconductors for accurately reproducing intra-band transition energies of heavy carriers such as the holes.

Original languageEnglish
Article number053103
JournalJournal of Applied Physics
Volume113
Issue number5
Early online date1 Feb 2013
DOIs
Publication statusPublished - 7 Feb 2013
Externally publishedYes

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