Structural and electrical properties of Co grown on Si(111) by low energy ion beam deposition

A. Bousetta, A. H. Al Bayati, J. A. van den Berg, D. G. Armour

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Co/Si interface formation was monitored by a high-depth-resolution medium-energy ion scattering (MEIS) spectroscopy. High-purity 59Co thin films were deposited either at room temperature (RT) or at 400°C onto a clean Si(111) substrate using a very-low-energy (50 eV) ion beam deposition (IBD). In situ Auger electron spectroscopy (AES) was used to ascertain the atomic cleanliness of the silicon surface before growth. A post furnace anneal under N2 was performed in the range 300-700°C after Co deposition for the silicide formation. The structure and the effect of annealing on the electrical properties of these epitaxial film were investigated by MEIS and four-point probe measurements, respectively. Finally barrier heights were measured in this range of annealing temperature using the C-V technique.

Original languageEnglish
Pages (from-to)480-485
Number of pages6
JournalApplied Surface Science
Volume56-58
Issue numberPART 1
DOIs
Publication statusPublished - 1992
Externally publishedYes

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