Study of Be δ-doped GaAs/AlAs multiple quantum wells by the surface photovoltage spectroscopy

B. Čechavičius; J. Kavaliauskas; G. Krivaite; V. Karpus; D. Seliuta; G. Valušis; M. P. Halsall; M. J. Steer; P. Harrison

doi:10.1016/j.apsusc.2005.12.028

Study of Be δ-doped GaAs/AlAs multiple quantum wells by the surface photovoltage spectroscopy

B. Čechavičius, J. Kavaliauskas, G. Krivaite, V. Karpus, D. Seliuta, G. Valušis, M. P. Halsall, M. J. Steer, P. Harrison

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2 Citations (Scopus)

Abstract

We report a surface photovoltage and differential surface photovoltage (DSPV) study of Be δ-doped GaAs/AlAs multiple quantum wells (QWs) with widths ranging from 3 to 20 nm and sheet doping densities from 2 × 10 ¹⁰ to 2.5 × 10 ¹² cm ^-2 per well aiming to characterize their electronic properties and structural quality. From a line shape analysis of room temperature DSPV spectra the interband excitonic transition energies and broadening parameters for a large number of QW-related subbands have been established. A study of well-width and quantum number dependencies of the excitonic linewidths allowed us to evaluate the various broadening contributions to the spectral line shapes in QWs of different design. It was found that an average half monolayer well-width fluctuations are the dominant broadening mechanism of the excitonic line for QWs thinner than 10 nm. In QWs thicker than 10 nm, the spectral line broadening originates mainly from thermal broadening as well as Stark broadening due to random electric fields of ionized impurities and exciton scattering by free holes.

Original language	English
Pages (from-to)	5437-5440
Number of pages	4
Journal	Applied Surface Science
Volume	252
Issue number	15
Early online date	18 Jan 2006
DOIs	https://doi.org/10.1016/j.apsusc.2005.12.028
Publication status	Published - 30 May 2006
Externally published	Yes

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@article{72fcf18a27864d8fa724ff24c6523f9c,

title = "Study of Be δ-doped GaAs/AlAs multiple quantum wells by the surface photovoltage spectroscopy",

abstract = " We report a surface photovoltage and differential surface photovoltage (DSPV) study of Be δ-doped GaAs/AlAs multiple quantum wells (QWs) with widths ranging from 3 to 20 nm and sheet doping densities from 2 × 10 10 to 2.5 × 10 12 cm -2 per well aiming to characterize their electronic properties and structural quality. From a line shape analysis of room temperature DSPV spectra the interband excitonic transition energies and broadening parameters for a large number of QW-related subbands have been established. A study of well-width and quantum number dependencies of the excitonic linewidths allowed us to evaluate the various broadening contributions to the spectral line shapes in QWs of different design. It was found that an average half monolayer well-width fluctuations are the dominant broadening mechanism of the excitonic line for QWs thinner than 10 nm. In QWs thicker than 10 nm, the spectral line broadening originates mainly from thermal broadening as well as Stark broadening due to random electric fields of ionized impurities and exciton scattering by free holes.",

keywords = "Modulation spectroscopy, Photovoltage spectroscopy, Quantum wells",

author = "B. {\v C}echavi{\v c}ius and J. Kavaliauskas and G. Krivaite and V. Karpus and D. Seliuta and G. Valu{\v s}is and Halsall, {M. P.} and Steer, {M. J.} and P. Harrison",

note = "Funding Information: One of the authors (B.{\v C}.) acknowledges the financial support from the Swedish Institute, Sweden. The Vilnius–Leeds–Manchester–Sheffield cooperation was supported by the project “Centre of Processing, Research and Application of Advanced Materials” (PRAMA) from the European Commission within the framework of Programme “Centres of Excellence”. The research in Vilnius was performed under the topics “Investigation of optical properties of optoelectronical materials and their nanostructures” (No. 133.2) and “Study of semiconductor nanostructures for terahertz technologies” (No. 144.1).",

year = "2006",

month = may,

day = "30",

doi = "10.1016/j.apsusc.2005.12.028",

language = "English",

volume = "252",

pages = "5437--5440",

journal = "Applications of Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "15",

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TY - JOUR

T1 - Study of Be δ-doped GaAs/AlAs multiple quantum wells by the surface photovoltage spectroscopy

AU - Čechavičius, B.

AU - Kavaliauskas, J.

AU - Krivaite, G.

AU - Karpus, V.

AU - Seliuta, D.

AU - Valušis, G.

AU - Halsall, M. P.

AU - Steer, M. J.

AU - Harrison, P.

N1 - Funding Information: One of the authors (B.Č.) acknowledges the financial support from the Swedish Institute, Sweden. The Vilnius–Leeds–Manchester–Sheffield cooperation was supported by the project “Centre of Processing, Research and Application of Advanced Materials” (PRAMA) from the European Commission within the framework of Programme “Centres of Excellence”. The research in Vilnius was performed under the topics “Investigation of optical properties of optoelectronical materials and their nanostructures” (No. 133.2) and “Study of semiconductor nanostructures for terahertz technologies” (No. 144.1).

PY - 2006/5/30

Y1 - 2006/5/30

N2 - We report a surface photovoltage and differential surface photovoltage (DSPV) study of Be δ-doped GaAs/AlAs multiple quantum wells (QWs) with widths ranging from 3 to 20 nm and sheet doping densities from 2 × 10 10 to 2.5 × 10 12 cm -2 per well aiming to characterize their electronic properties and structural quality. From a line shape analysis of room temperature DSPV spectra the interband excitonic transition energies and broadening parameters for a large number of QW-related subbands have been established. A study of well-width and quantum number dependencies of the excitonic linewidths allowed us to evaluate the various broadening contributions to the spectral line shapes in QWs of different design. It was found that an average half monolayer well-width fluctuations are the dominant broadening mechanism of the excitonic line for QWs thinner than 10 nm. In QWs thicker than 10 nm, the spectral line broadening originates mainly from thermal broadening as well as Stark broadening due to random electric fields of ionized impurities and exciton scattering by free holes.

AB - We report a surface photovoltage and differential surface photovoltage (DSPV) study of Be δ-doped GaAs/AlAs multiple quantum wells (QWs) with widths ranging from 3 to 20 nm and sheet doping densities from 2 × 10 10 to 2.5 × 10 12 cm -2 per well aiming to characterize their electronic properties and structural quality. From a line shape analysis of room temperature DSPV spectra the interband excitonic transition energies and broadening parameters for a large number of QW-related subbands have been established. A study of well-width and quantum number dependencies of the excitonic linewidths allowed us to evaluate the various broadening contributions to the spectral line shapes in QWs of different design. It was found that an average half monolayer well-width fluctuations are the dominant broadening mechanism of the excitonic line for QWs thinner than 10 nm. In QWs thicker than 10 nm, the spectral line broadening originates mainly from thermal broadening as well as Stark broadening due to random electric fields of ionized impurities and exciton scattering by free holes.

KW - Modulation spectroscopy

KW - Photovoltage spectroscopy

KW - Quantum wells

UR - http://www.scopus.com/inward/record.url?scp=33744522615&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2005.12.028

DO - 10.1016/j.apsusc.2005.12.028

M3 - Article

AN - SCOPUS:33744522615

VL - 252

SP - 5437

EP - 5440

JO - Applications of Surface Science

JF - Applications of Surface Science

SN - 0169-4332

IS - 15

ER -

Study of Be δ-doped GaAs/AlAs multiple quantum wells by the surface photovoltage spectroscopy

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