Study of Excitonic Transitions in δ-Doped GaAs/AlAs Quantum Wells

B. Čechavičius; R. Nedzinskas; J. Kavaliauskas; V. Karpus; G. Valušis; B. Sherliker; M. Halsall; P. Harrison; E. Linfield; M. Steer

doi:10.3952/lithjphys.49308

Study of Excitonic Transitions in δ-Doped GaAs/AlAs Quantum Wells

B. Čechavičius, R. Nedzinskas, J. Kavaliauskas, V. Karpus, G. Valušis, B. Sherliker, M. Halsall, P. Harrison, E. Linfield, M. Steer

Research output: Contribution to journal › Article › peer-review

Abstract

Investigation of excitonic lines in differential surface photovoltage (DSPV) spectra of p-type (Be) 5-doped GaAs/AlAs multiple quantum well (MQW) structures is reported. From the lineshape analysis of the DSPV spectra, the energies and line broadening parameters for a large number of QW related excitonic transitions were determined. It is found that transition energies are in a good agreement with calculations carried out within the envelope function approximation taking into account the nonparabolicity of energy bands. Examining the dependence of the exciton linewidth on the QW thickness, the line-broadening mechanisms were revealed and interface roughness in the MQW structures was evaluated. An asymmetrical lineshape of certain excitonic transitions in SPV spectra of MQW structures was shown to be related to the Fano resonance.

Original language	English
Pages (from-to)	291-297
Number of pages	7
Journal	Lithuanian Journal of Physics
Volume	49
Issue number	3
DOIs	https://doi.org/10.3952/lithjphys.49308
Publication status	Published - 15 Sep 2009
Externally published	Yes

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title = "Study of Excitonic Transitions in δ-Doped GaAs/AlAs Quantum Wells",

abstract = "Investigation of excitonic lines in differential surface photovoltage (DSPV) spectra of p-type (Be) 5-doped GaAs/AlAs multiple quantum well (MQW) structures is reported. From the lineshape analysis of the DSPV spectra, the energies and line broadening parameters for a large number of QW related excitonic transitions were determined. It is found that transition energies are in a good agreement with calculations carried out within the envelope function approximation taking into account the nonparabolicity of energy bands. Examining the dependence of the exciton linewidth on the QW thickness, the line-broadening mechanisms were revealed and interface roughness in the MQW structures was evaluated. An asymmetrical lineshape of certain excitonic transitions in SPV spectra of MQW structures was shown to be related to the Fano resonance.",

keywords = "Delta-doped quantum wells, Excitonic transitions, Surface photovoltage spectroscopy",

author = "B. {\v C}echavi{\v c}ius and R. Nedzinskas and J. Kavaliauskas and V. Karpus and G. Valu{\v s}is and B. Sherliker and M. Halsall and P. Harrison and E. Linfield and M. Steer",

year = "2009",

month = sep,

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doi = "10.3952/lithjphys.49308",

language = "English",

volume = "49",

pages = "291--297",

journal = "Lithuanian Journal of Physics",

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TY - JOUR

T1 - Study of Excitonic Transitions in δ-Doped GaAs/AlAs Quantum Wells

AU - Čechavičius, B.

AU - Nedzinskas, R.

AU - Kavaliauskas, J.

AU - Karpus, V.

AU - Valušis, G.

AU - Sherliker, B.

AU - Halsall, M.

AU - Harrison, P.

AU - Linfield, E.

AU - Steer, M.

PY - 2009/9/15

Y1 - 2009/9/15

N2 - Investigation of excitonic lines in differential surface photovoltage (DSPV) spectra of p-type (Be) 5-doped GaAs/AlAs multiple quantum well (MQW) structures is reported. From the lineshape analysis of the DSPV spectra, the energies and line broadening parameters for a large number of QW related excitonic transitions were determined. It is found that transition energies are in a good agreement with calculations carried out within the envelope function approximation taking into account the nonparabolicity of energy bands. Examining the dependence of the exciton linewidth on the QW thickness, the line-broadening mechanisms were revealed and interface roughness in the MQW structures was evaluated. An asymmetrical lineshape of certain excitonic transitions in SPV spectra of MQW structures was shown to be related to the Fano resonance.

AB - Investigation of excitonic lines in differential surface photovoltage (DSPV) spectra of p-type (Be) 5-doped GaAs/AlAs multiple quantum well (MQW) structures is reported. From the lineshape analysis of the DSPV spectra, the energies and line broadening parameters for a large number of QW related excitonic transitions were determined. It is found that transition energies are in a good agreement with calculations carried out within the envelope function approximation taking into account the nonparabolicity of energy bands. Examining the dependence of the exciton linewidth on the QW thickness, the line-broadening mechanisms were revealed and interface roughness in the MQW structures was evaluated. An asymmetrical lineshape of certain excitonic transitions in SPV spectra of MQW structures was shown to be related to the Fano resonance.

KW - Delta-doped quantum wells

KW - Excitonic transitions

KW - Surface photovoltage spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=77952910267&partnerID=8YFLogxK

U2 - 10.3952/lithjphys.49308

DO - 10.3952/lithjphys.49308

M3 - Article

AN - SCOPUS:77952910267

VL - 49

SP - 291

EP - 297

JO - Lithuanian Journal of Physics

JF - Lithuanian Journal of Physics

SN - 1648-8504

IS - 3

ER -

Study of Excitonic Transitions in δ-Doped GaAs/AlAs Quantum Wells

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