Surface plasmon waveguides with gradually doped or NiAl intermetallic compound buried contact for terahertz quantum cascade lasers

D. Indjin; Z. Ikonić; P. Harrison; R. W. Kelsall

doi:10.1063/1.1599630

Surface plasmon waveguides with gradually doped or NiAl intermetallic compound buried contact for terahertz quantum cascade lasers

D. Indjin, Z. Ikonić, P. Harrison, R. W. Kelsall

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Improved designs of surface plasmon waveguides for use in GaAs/AlGaAs terahertz quantum cascade lasers are presented. Modal losses and confinement factors are calculated for TM modes in metal-variably doped multilayer semiconductor and metal-intermetallic compound layer clad structures and compared with those obtained in recently realized metal-highly doped semiconductor clad layer structures. Considerable improvements of the mode confinement factors are predicted, and guidelines for choosing the confinement layer parameters are given.

Original language	English
Pages (from-to)	3249-3252
Number of pages	4
Journal	Journal of Applied Physics
Volume	94
Issue number	5
Early online date	19 Aug 2003
DOIs	https://doi.org/10.1063/1.1599630
Publication status	Published - 1 Sep 2003
Externally published	Yes

Access to Document

10.1063/1.1599630Licence: Unspecified

Cite this

@article{40bff250f14e4b96a999083febfb54b6,

title = "Surface plasmon waveguides with gradually doped or NiAl intermetallic compound buried contact for terahertz quantum cascade lasers",

abstract = "Improved designs of surface plasmon waveguides for use in GaAs/AlGaAs terahertz quantum cascade lasers are presented. Modal losses and confinement factors are calculated for TM modes in metal-variably doped multilayer semiconductor and metal-intermetallic compound layer clad structures and compared with those obtained in recently realized metal-highly doped semiconductor clad layer structures. Considerable improvements of the mode confinement factors are predicted, and guidelines for choosing the confinement layer parameters are given.",

keywords = "Doping (additives), Intermetallics, Modal analysis, Parameter estimation, Quantum electronics, Semiconducting gallium arsenide, Waveguides",

author = "D. Indjin and Z. Ikoni{\'c} and P. Harrison and Kelsall, {R. W.}",

year = "2003",

month = sep,

day = "1",

doi = "10.1063/1.1599630",

language = "English",

volume = "94",

pages = "3249--3252",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "5",

}

TY - JOUR

T1 - Surface plasmon waveguides with gradually doped or NiAl intermetallic compound buried contact for terahertz quantum cascade lasers

AU - Indjin, D.

AU - Ikonić, Z.

AU - Harrison, P.

AU - Kelsall, R. W.

PY - 2003/9/1

Y1 - 2003/9/1

N2 - Improved designs of surface plasmon waveguides for use in GaAs/AlGaAs terahertz quantum cascade lasers are presented. Modal losses and confinement factors are calculated for TM modes in metal-variably doped multilayer semiconductor and metal-intermetallic compound layer clad structures and compared with those obtained in recently realized metal-highly doped semiconductor clad layer structures. Considerable improvements of the mode confinement factors are predicted, and guidelines for choosing the confinement layer parameters are given.

AB - Improved designs of surface plasmon waveguides for use in GaAs/AlGaAs terahertz quantum cascade lasers are presented. Modal losses and confinement factors are calculated for TM modes in metal-variably doped multilayer semiconductor and metal-intermetallic compound layer clad structures and compared with those obtained in recently realized metal-highly doped semiconductor clad layer structures. Considerable improvements of the mode confinement factors are predicted, and guidelines for choosing the confinement layer parameters are given.

KW - Doping (additives)

KW - Intermetallics

KW - Modal analysis

KW - Parameter estimation

KW - Quantum electronics

KW - Semiconducting gallium arsenide

KW - Waveguides

UR - http://www.scopus.com/inward/record.url?scp=0141745849&partnerID=8YFLogxK

U2 - 10.1063/1.1599630

DO - 10.1063/1.1599630

M3 - Article

AN - SCOPUS:0141745849

VL - 94

SP - 3249

EP - 3252

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 5

ER -

Surface plasmon waveguides with gradually doped or NiAl intermetallic compound buried contact for terahertz quantum cascade lasers

Abstract

Access to Document

Other files and links

Fingerprint

Cite this