Terahertz Detection with δ-Doped GaAs/AlAs Multiple Quantum Wells

D. Seliuta, B. Čechavičius, J. Kavaliauskas, G. Krivaite, I. Grigelionis, S. Balakauskas, G. Valušis, B. Sherliker, M. P. Halsall, M. Lachab, S. P. Khanna, P. Harrison, E. H. Linfield

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)


The authors demonstrate selective detection of terahertz radiation employing beryllium δ-doped GaAs/AlAs multiple quantum wells. The sensitivity up to 1 V/W within 4.2-7.3 THz range at liquid helium temperatures is reached. The Franz-Keldysh oscillations observed in photo- and electroreflectance spectra allowed one to estimate built-in electric fields in the structures studied. It was found that the electric field strength in the cap layer region could vary from 10 kV/cm up to 26 kV/cm, depending on the structure design and temperature.

Original languageEnglish
Pages (from-to)909-912
Number of pages4
JournalActa Physica Polonica A
Issue number3
Publication statusPublished - 1 Mar 2008
Externally publishedYes
Event13th International Symposium on Ultrafast Phenomena in Semiconductors - Vilnius, Lithuania
Duration: 26 Aug 200729 Aug 2007
Conference number: 13


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