The authors demonstrate selective detection of terahertz radiation employing beryllium δ-doped GaAs/AlAs multiple quantum wells. The sensitivity up to 1 V/W within 4.2-7.3 THz range at liquid helium temperatures is reached. The Franz-Keldysh oscillations observed in photo- and electroreflectance spectra allowed one to estimate built-in electric fields in the structures studied. It was found that the electric field strength in the cap layer region could vary from 10 kV/cm up to 26 kV/cm, depending on the structure design and temperature.
|Number of pages||4|
|Journal||Acta Physica Polonica A|
|Publication status||Published - 1 Mar 2008|
|Event||13th International Symposium on Ultrafast Phenomena in Semiconductors - Vilnius, Lithuania|
Duration: 26 Aug 2007 → 29 Aug 2007
Conference number: 13