Terahertz Detection with δ-Doped GaAs/AlAs Multiple Quantum Wells

D. Seliuta; B. Čechavičius; J. Kavaliauskas; G. Krivaite; I. Grigelionis; S. Balakauskas; G. Valušis; B. Sherliker; M. P. Halsall; M. Lachab; S. P. Khanna; P. Harrison; E. H. Linfield

doi:10.12693/APhysPolA.113.909

Terahertz Detection with δ-Doped GaAs/AlAs Multiple Quantum Wells

D. Seliuta, B. Čechavičius, J. Kavaliauskas, G. Krivaite, I. Grigelionis, S. Balakauskas, G. Valušis, B. Sherliker, M. P. Halsall, M. Lachab, S. P. Khanna, P. Harrison, E. H. Linfield

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

The authors demonstrate selective detection of terahertz radiation employing beryllium δ-doped GaAs/AlAs multiple quantum wells. The sensitivity up to 1 V/W within 4.2-7.3 THz range at liquid helium temperatures is reached. The Franz-Keldysh oscillations observed in photo- and electroreflectance spectra allowed one to estimate built-in electric fields in the structures studied. It was found that the electric field strength in the cap layer region could vary from 10 kV/cm up to 26 kV/cm, depending on the structure design and temperature.

Original language	English
Pages (from-to)	909-912
Number of pages	4
Journal	Acta Physica Polonica A
Volume	113
Issue number	3
DOIs	https://doi.org/10.12693/APhysPolA.113.909
Publication status	Published - 1 Mar 2008
Externally published	Yes
Event	13th International Symposium on Ultrafast Phenomena in Semiconductors - Vilnius, Lithuania Duration: 26 Aug 2007 → 29 Aug 2007 Conference number: 13

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title = "Terahertz Detection with δ-Doped GaAs/AlAs Multiple Quantum Wells",

abstract = "The authors demonstrate selective detection of terahertz radiation employing beryllium δ-doped GaAs/AlAs multiple quantum wells. The sensitivity up to 1 V/W within 4.2-7.3 THz range at liquid helium temperatures is reached. The Franz-Keldysh oscillations observed in photo- and electroreflectance spectra allowed one to estimate built-in electric fields in the structures studied. It was found that the electric field strength in the cap layer region could vary from 10 kV/cm up to 26 kV/cm, depending on the structure design and temperature.",

keywords = "Electric fields, Radiation, Semiconducting gallium arsenide, Semiconductor doping",

author = "D. Seliuta and B. {\v C}echavi{\v c}ius and J. Kavaliauskas and G. Krivaite and I. Grigelionis and S. Balakauskas and G. Valu{\v s}is and B. Sherliker and Halsall, \{M. P.\} and M. Lachab and Khanna, \{S. P.\} and P. Harrison and Linfield, \{E. H.\}",

year = "2008",

month = mar,

day = "1",

doi = "10.12693/APhysPolA.113.909",

language = "English",

volume = "113",

pages = "909--912",

journal = "Acta Physica Polonica A",

issn = "0587-4246",

publisher = "Polska Akademia Nauk",

number = "3",

note = "13th International Symposium on Ultrafast Phenomena in Semiconductors ; Conference date: 26-08-2007 Through 29-08-2007",

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TY - JOUR

T1 - Terahertz Detection with δ-Doped GaAs/AlAs Multiple Quantum Wells

AU - Seliuta, D.

AU - Čechavičius, B.

AU - Kavaliauskas, J.

AU - Krivaite, G.

AU - Grigelionis, I.

AU - Balakauskas, S.

AU - Valušis, G.

AU - Sherliker, B.

AU - Halsall, M. P.

AU - Lachab, M.

AU - Khanna, S. P.

AU - Harrison, P.

AU - Linfield, E. H.

N1 - Conference code: 13

PY - 2008/3/1

Y1 - 2008/3/1

N2 - The authors demonstrate selective detection of terahertz radiation employing beryllium δ-doped GaAs/AlAs multiple quantum wells. The sensitivity up to 1 V/W within 4.2-7.3 THz range at liquid helium temperatures is reached. The Franz-Keldysh oscillations observed in photo- and electroreflectance spectra allowed one to estimate built-in electric fields in the structures studied. It was found that the electric field strength in the cap layer region could vary from 10 kV/cm up to 26 kV/cm, depending on the structure design and temperature.

AB - The authors demonstrate selective detection of terahertz radiation employing beryllium δ-doped GaAs/AlAs multiple quantum wells. The sensitivity up to 1 V/W within 4.2-7.3 THz range at liquid helium temperatures is reached. The Franz-Keldysh oscillations observed in photo- and electroreflectance spectra allowed one to estimate built-in electric fields in the structures studied. It was found that the electric field strength in the cap layer region could vary from 10 kV/cm up to 26 kV/cm, depending on the structure design and temperature.

KW - Electric fields

KW - Radiation

KW - Semiconducting gallium arsenide

KW - Semiconductor doping

UR - https://www.scopus.com/pages/publications/41349089741

U2 - 10.12693/APhysPolA.113.909

DO - 10.12693/APhysPolA.113.909

M3 - Conference article

AN - SCOPUS:41349089741

SN - 0587-4246

VL - 113

SP - 909

EP - 912

JO - Acta Physica Polonica A

JF - Acta Physica Polonica A

IS - 3

T2 - 13th International Symposium on Ultrafast Phenomena in Semiconductors

Y2 - 26 August 2007 through 29 August 2007

ER -

Terahertz Detection with δ-Doped GaAs/AlAs Multiple Quantum Wells

Abstract

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