Terahertz Emission and Absorption Characteristics of Silicon Containing Boron and Phosphorous Impurity Dopants and the Effect of Temperature

Guy Matmon, Stephen A. Lynch, Paul Townsend, Douglas J. Paul, Mike Baint, Harry S. Gamble, Jing Zhang, Zoran Ikonic, Robert W. Kelsall, Paul Harrison

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The emission and absorption characteristics of boron-doped and phosphorous-doped silicon at terahertz frequencies are investigated. Different doping concentrations are considered and individual terahertz optical transitions are identified. The effect of temperature is considered.

Original languageEnglish
Title of host publication2005 IEEE International Conference on Group IV Photonics
PublisherIEEE
Pages13-15
Number of pages3
ISBN (Print)0780390709, 9780780390706
DOIs
Publication statusPublished - 17 Oct 2005
Externally publishedYes
Event2005 IEEE International Conference on Group IV Photonics - Antwerp, Belgium
Duration: 21 Sep 200523 Sep 2005

Publication series

Name2005 IEEE International Conference on Group IV Photonics
PublisherIEEE
Volume2005
ISSN (Print)1949-2081
ISSN (Electronic)1949-209X

Conference

Conference2005 IEEE International Conference on Group IV Photonics
Country/TerritoryBelgium
CityAntwerp
Period21/09/0523/09/05

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