Terahertz Intersubband Emission from Silicon-Germanium Quantum Cascades

R. W. Kelsall, Z. Ikonic, P. Harrison, S. A. Lynch, R. Bates, D. J. Paul, D. J. Norris, San Lin Liew, A. G. Cullis, D. J. Robbins, P. Murzyn, C. R. Pidgeon, D. D. Arnone

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)


Terahertz electroluminescence due to light hole-heavy hole intersubband transitions in p-type Si/SiGe quantum cascade structures has been observed in both surface-normal and edge emission geometries. THz output powers of up to 50 nW have been observed for surface emission from 100 period Si0.76Ge0.24/Si heterostructures grown on a Si0.8Ge0.2 relaxed buffer or 'virtual substrate'.

Original languageEnglish
Title of host publicationIEEE 10th International Conference on Terahertz Electronics, Proceedings
Subtitle of host publicationTHz 2002
EditorsJ M Chamberlain, A G Davies, P Harrison, E H Linfield, R E Miles, S Withington
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Print)0780376307
Publication statusPublished - 7 Nov 2002
Externally publishedYes
Event10th IEEE International Conference on Terahertz Electronics - Cambridge, United Kingdom
Duration: 9 Sep 200210 Sep 2002
Conference number: 10


Conference10th IEEE International Conference on Terahertz Electronics
Abbreviated titleTHz 2002
Country/TerritoryUnited Kingdom


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