Terahertz electroluminescence due to light hole-heavy hole intersubband transitions in p-type Si/SiGe quantum cascade structures has been observed in both surface-normal and edge emission geometries. THz output powers of up to 50 nW have been observed for surface emission from 100 period Si0.76Ge0.24/Si heterostructures grown on a Si0.8Ge0.2 relaxed buffer or 'virtual substrate'.
|Title of host publication
|IEEE 10th International Conference on Terahertz Electronics, Proceedings
|Subtitle of host publication
|J M Chamberlain, A G Davies, P Harrison, E H Linfield, R E Miles, S Withington
|Institute of Electrical and Electronics Engineers Inc.
|Number of pages
|Published - 7 Nov 2002
|10th IEEE International Conference on Terahertz Electronics - Cambridge, United Kingdom
Duration: 9 Sep 2002 → 10 Sep 2002
Conference number: 10
|10th IEEE International Conference on Terahertz Electronics
|9/09/02 → 10/09/02