Terahertz Intersubband Emission from Silicon-Germanium Quantum Cascades

R. W. Kelsall; Z. Ikonic; P. Harrison; S. A. Lynch; R. Bates; D. J. Paul; D. J. Norris; San Lin Liew; A. G. Cullis; D. J. Robbins; P. Murzyn; C. R. Pidgeon; D. D. Arnone

doi:10.1109/THZ.2002.1037575

Terahertz Intersubband Emission from Silicon-Germanium Quantum Cascades

R. W. Kelsall, Z. Ikonic, P. Harrison, S. A. Lynch, R. Bates, D. J. Paul, D. J. Norris, San Lin Liew, A. G. Cullis, D. J. Robbins, P. Murzyn, C. R. Pidgeon, D. D. Arnone

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

Terahertz electroluminescence due to light hole-heavy hole intersubband transitions in p-type Si/SiGe quantum cascade structures has been observed in both surface-normal and edge emission geometries. THz output powers of up to 50 nW have been observed for surface emission from 100 period Si_0.76Ge_0.24/Si heterostructures grown on a Si_0.8Ge_0.2 relaxed buffer or 'virtual substrate'.

Original language	English
Title of host publication	IEEE 10th International Conference on Terahertz Electronics, Proceedings
Subtitle of host publication	THz 2002
Editors	J M Chamberlain, A G Davies, P Harrison, E H Linfield, R E Miles, S Withington
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	9-12
Number of pages	4
ISBN (Print)	0780376307
DOIs	https://doi.org/10.1109/THZ.2002.1037575
Publication status	Published - 7 Nov 2002
Externally published	Yes
Event	10th IEEE International Conference on Terahertz Electronics - Cambridge, United Kingdom Duration: 9 Sept 2002 → 10 Sept 2002 Conference number: 10

Conference

Conference	10th IEEE International Conference on Terahertz Electronics
Abbreviated title	THz 2002
Country/Territory	United Kingdom
City	Cambridge
Period	9/09/02 → 10/09/02

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Kelsall, R. W., Ikonic, Z., Harrison, P., Lynch, S. A., Bates, R., Paul, D. J., Norris, D. J., Liew, S. L., Cullis, A. G., Robbins, D. J., Murzyn, P., Pidgeon, C. R., & Arnone, D. D. (2002). Terahertz Intersubband Emission from Silicon-Germanium Quantum Cascades. In J. M. Chamberlain, A. G. Davies, P. Harrison, E. H. Linfield, R. E. Miles, & S. Withington (Eds.), IEEE 10th International Conference on Terahertz Electronics, Proceedings: THz 2002 (pp. 9-12). Article 1037575 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/THZ.2002.1037575

Kelsall, R. W. ; Ikonic, Z. ; Harrison, P. et al. / Terahertz Intersubband Emission from Silicon-Germanium Quantum Cascades. IEEE 10th International Conference on Terahertz Electronics, Proceedings: THz 2002. editor / J M Chamberlain ; A G Davies ; P Harrison ; E H Linfield ; R E Miles ; S Withington. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 9-12

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title = "Terahertz Intersubband Emission from Silicon-Germanium Quantum Cascades",

abstract = "Terahertz electroluminescence due to light hole-heavy hole intersubband transitions in p-type Si/SiGe quantum cascade structures has been observed in both surface-normal and edge emission geometries. THz output powers of up to 50 nW have been observed for surface emission from 100 period Si0.76Ge0.24/Si heterostructures grown on a Si0.8Ge0.2 relaxed buffer or 'virtual substrate'.",

keywords = "Quantum Cascade Laser, SiGe, THz, virtual substrate",

author = "Kelsall, {R. W.} and Z. Ikonic and P. Harrison and Lynch, {S. A.} and R. Bates and Paul, {D. J.} and Norris, {D. J.} and Liew, {San Lin} and Cullis, {A. G.} and Robbins, {D. J.} and P. Murzyn and Pidgeon, {C. R.} and Arnone, {D. D.}",

note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; 10th IEEE International Conference on Terahertz Electronics, THz 2002 ; Conference date: 09-09-2002 Through 10-09-2002",

year = "2002",

month = nov,

day = "7",

doi = "10.1109/THZ.2002.1037575",

language = "English",

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pages = "9--12",

editor = "Chamberlain, {J M} and Davies, {A G} and P Harrison and Linfield, {E H} and Miles, {R E} and S Withington",

booktitle = "IEEE 10th International Conference on Terahertz Electronics, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

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Kelsall, RW, Ikonic, Z, Harrison, P, Lynch, SA, Bates, R, Paul, DJ, Norris, DJ, Liew, SL, Cullis, AG, Robbins, DJ, Murzyn, P, Pidgeon, CR & Arnone, DD 2002, Terahertz Intersubband Emission from Silicon-Germanium Quantum Cascades. in JM Chamberlain, AG Davies, P Harrison, EH Linfield, RE Miles & S Withington (eds), IEEE 10th International Conference on Terahertz Electronics, Proceedings: THz 2002., 1037575, Institute of Electrical and Electronics Engineers Inc., pp. 9-12, 10th IEEE International Conference on Terahertz Electronics, Cambridge, United Kingdom, 9/09/02. https://doi.org/10.1109/THZ.2002.1037575

Terahertz Intersubband Emission from Silicon-Germanium Quantum Cascades. / Kelsall, R. W.; Ikonic, Z.; Harrison, P. et al.
IEEE 10th International Conference on Terahertz Electronics, Proceedings: THz 2002. ed. / J M Chamberlain; A G Davies; P Harrison; E H Linfield; R E Miles; S Withington. Institute of Electrical and Electronics Engineers Inc., 2002. p. 9-12 1037575.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Terahertz Intersubband Emission from Silicon-Germanium Quantum Cascades

AU - Kelsall, R. W.

AU - Ikonic, Z.

AU - Harrison, P.

AU - Lynch, S. A.

AU - Bates, R.

AU - Paul, D. J.

AU - Norris, D. J.

AU - Liew, San Lin

AU - Cullis, A. G.

AU - Robbins, D. J.

AU - Murzyn, P.

AU - Pidgeon, C. R.

AU - Arnone, D. D.

N1 - Conference code: 10

PY - 2002/11/7

Y1 - 2002/11/7

N2 - Terahertz electroluminescence due to light hole-heavy hole intersubband transitions in p-type Si/SiGe quantum cascade structures has been observed in both surface-normal and edge emission geometries. THz output powers of up to 50 nW have been observed for surface emission from 100 period Si0.76Ge0.24/Si heterostructures grown on a Si0.8Ge0.2 relaxed buffer or 'virtual substrate'.

AB - Terahertz electroluminescence due to light hole-heavy hole intersubband transitions in p-type Si/SiGe quantum cascade structures has been observed in both surface-normal and edge emission geometries. THz output powers of up to 50 nW have been observed for surface emission from 100 period Si0.76Ge0.24/Si heterostructures grown on a Si0.8Ge0.2 relaxed buffer or 'virtual substrate'.

KW - Quantum Cascade Laser

KW - SiGe

KW - THz

KW - virtual substrate

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SN - 0780376307

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EP - 12

BT - IEEE 10th International Conference on Terahertz Electronics, Proceedings

A2 - Chamberlain, J M

A2 - Davies, A G

A2 - Harrison, P

A2 - Linfield, E H

A2 - Miles, R E

A2 - Withington, S

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 10th IEEE International Conference on Terahertz Electronics

Y2 - 9 September 2002 through 10 September 2002

ER -

Kelsall RW, Ikonic Z, Harrison P, Lynch SA, Bates R, Paul DJ et al. Terahertz Intersubband Emission from Silicon-Germanium Quantum Cascades. In Chamberlain JM, Davies AG, Harrison P, Linfield EH, Miles RE, Withington S, editors, IEEE 10th International Conference on Terahertz Electronics, Proceedings: THz 2002. Institute of Electrical and Electronics Engineers Inc. 2002. p. 9-12. 1037575 doi: 10.1109/THZ.2002.1037575

Terahertz Intersubband Emission from Silicon-Germanium Quantum Cascades

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