We present the first Monte Carlo device simulations of an inter-subband laser, predicting the possibility of lasing in the far infrared (THz) using emission from optically pumped GaAs/AlGaAs triple quantum wells from 77 to 300 K. The simulations included a full set of electron-phonon and electron-electron scattering processes, as well as a realistic model for optical pumping. The THz band has important potential applications in imaging (e.g. medical, high-resolution radar) and short-range communications (e.g. wireless office networks).
|Number of pages||4|
|Journal||Physica B: Condensed Matter|
|Publication status||Published - 1 Dec 1999|
|Event||Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors - Kyoto, Japan|
Duration: 19 Jul 1999 → 23 Jul 1999
Conference number: 11