Abstract
We present the first Monte Carlo device simulations of an inter-subband laser, predicting the possibility of lasing in the far infrared (THz) using emission from optically pumped GaAs/AlGaAs triple quantum wells from 77 to 300 K. The simulations included a full set of electron-phonon and electron-electron scattering processes, as well as a realistic model for optical pumping. The THz band has important potential applications in imaging (e.g. medical, high-resolution radar) and short-range communications (e.g. wireless office networks).
Original language | English |
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Pages (from-to) | 226-229 |
Number of pages | 4 |
Journal | Physica B: Condensed Matter |
Volume | 272 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 1 Dec 1999 |
Externally published | Yes |
Event | 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors - Kyoto, Japan Duration: 19 Jul 1999 → 23 Jul 1999 Conference number: 11 |