Terahertz Sensing Based on Impurity Rransitions in delta-doped GaAs/AlAs Multiple Quantum Wells

Dalius Seliuta; Bronislovas Čechavičius; Julius Kavaliauskas; Saulius Balakauskas; Gintaras Valušis; Ben Sherliker; Matthew Halsall; Mohamed Lachab; Suraj P. Khanna; Paul Harrison; H. Edmund Linfield

doi:10.1063/1.3295358

Terahertz Sensing Based on Impurity Rransitions in delta-doped GaAs/AlAs Multiple Quantum Wells

Dalius Seliuta, Bronislovas Čechavičius, Julius Kavaliauskas, Saulius Balakauskas, Gintaras Valušis, Ben Sherliker, Matthew Halsall, Mohamed Lachab, Suraj P. Khanna, Paul Harrison, H. Edmund Linfield

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Impurity bound-to-unbound transitions are used to demonstrate normal incidence terahertz detection in both n- and p-type multiple quantum wells. Photocurrents are detected between 0.6-4.2 THz, and between 3.7-7.3 THz, in silicon- and beryllium-doped GaAs/AlAs structures, respectively, at temperatures below 40 K. The temporal resolution of the photocurrent response is estimated to be ≈ 4 ns.

Original language	English
Title of host publication	Physics of Semiconductors - 29th International Conference, ICPS 29
Publisher	AIP Publishing
Pages	183-184
Number of pages	2
ISBN (Print)	9780735407367
DOIs	https://doi.org/10.1063/1.3295358
Publication status	Published - 4 Jan 2010
Externally published	Yes
Event	29th International Conference on Physics of Semiconductors - Rio de Janeiro, Brazil Duration: 27 Jul 2008 → 1 Aug 2008 Conference number: 29

Publication series

Name	AIP Conference Proceedings
Volume	1199
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	29th International Conference on Physics of Semiconductors
Abbreviated title	ICPS 29
Country/Territory	Brazil
City	Rio de Janeiro
Period	27/07/08 → 1/08/08

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Seliuta, D., Čechavičius, B., Kavaliauskas, J., Balakauskas, S., Valušis, G., Sherliker, B., Halsall, M., Lachab, M., Khanna, S. P., Harrison, P., & Edmund Linfield, H. (2010). Terahertz Sensing Based on Impurity Rransitions in delta-doped GaAs/AlAs Multiple Quantum Wells. In Physics of Semiconductors - 29th International Conference, ICPS 29 (pp. 183-184). (AIP Conference Proceedings; Vol. 1199). AIP Publishing. https://doi.org/10.1063/1.3295358

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title = "Terahertz Sensing Based on Impurity Rransitions in delta-doped GaAs/AlAs Multiple Quantum Wells",

abstract = "Impurity bound-to-unbound transitions are used to demonstrate normal incidence terahertz detection in both n- and p-type multiple quantum wells. Photocurrents are detected between 0.6-4.2 THz, and between 3.7-7.3 THz, in silicon- and beryllium-doped GaAs/AlAs structures, respectively, at temperatures below 40 K. The temporal resolution of the photocurrent response is estimated to be ≈ 4 ns.",

keywords = "GaAs/AlAs quantum wells, Impurity transitions, Terahertz sensing",

author = "Dalius Seliuta and Bronislovas {\v C}echavi{\v c}ius and Julius Kavaliauskas and Saulius Balakauskas and Gintaras Valu{\v s}is and Ben Sherliker and Matthew Halsall and Mohamed Lachab and Khanna, {Suraj P.} and Paul Harrison and {Edmund Linfield}, H.",

year = "2010",

month = jan,

day = "4",

doi = "10.1063/1.3295358",

language = "English",

isbn = "9780735407367",

series = "AIP Conference Proceedings",

publisher = "AIP Publishing",

pages = "183--184",

booktitle = "Physics of Semiconductors - 29th International Conference, ICPS 29",

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note = "29th International Conference on Physics of Semiconductors, ICPS 29 ; Conference date: 27-07-2008 Through 01-08-2008",

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Seliuta, D, Čechavičius, B, Kavaliauskas, J, Balakauskas, S, Valušis, G, Sherliker, B, Halsall, M, Lachab, M, Khanna, SP, Harrison, P & Edmund Linfield, H 2010, Terahertz Sensing Based on Impurity Rransitions in delta-doped GaAs/AlAs Multiple Quantum Wells. in Physics of Semiconductors - 29th International Conference, ICPS 29. AIP Conference Proceedings, vol. 1199, AIP Publishing, pp. 183-184, 29th International Conference on Physics of Semiconductors, Rio de Janeiro, Brazil, 27/07/08. https://doi.org/10.1063/1.3295358

Terahertz Sensing Based on Impurity Rransitions in delta-doped GaAs/AlAs Multiple Quantum Wells. / Seliuta, Dalius; Čechavičius, Bronislovas; Kavaliauskas, Julius et al.

Physics of Semiconductors - 29th International Conference, ICPS 29. AIP Publishing, 2010. p. 183-184 (AIP Conference Proceedings; Vol. 1199).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Seliuta, Dalius

AU - Čechavičius, Bronislovas

AU - Kavaliauskas, Julius

AU - Balakauskas, Saulius

AU - Valušis, Gintaras

AU - Sherliker, Ben

AU - Halsall, Matthew

AU - Lachab, Mohamed

AU - Khanna, Suraj P.

AU - Harrison, Paul

AU - Edmund Linfield, H.

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N2 - Impurity bound-to-unbound transitions are used to demonstrate normal incidence terahertz detection in both n- and p-type multiple quantum wells. Photocurrents are detected between 0.6-4.2 THz, and between 3.7-7.3 THz, in silicon- and beryllium-doped GaAs/AlAs structures, respectively, at temperatures below 40 K. The temporal resolution of the photocurrent response is estimated to be ≈ 4 ns.

AB - Impurity bound-to-unbound transitions are used to demonstrate normal incidence terahertz detection in both n- and p-type multiple quantum wells. Photocurrents are detected between 0.6-4.2 THz, and between 3.7-7.3 THz, in silicon- and beryllium-doped GaAs/AlAs structures, respectively, at temperatures below 40 K. The temporal resolution of the photocurrent response is estimated to be ≈ 4 ns.

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KW - Impurity transitions

KW - Terahertz sensing

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BT - Physics of Semiconductors - 29th International Conference, ICPS 29

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T2 - 29th International Conference on Physics of Semiconductors

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ER -

Terahertz Sensing Based on Impurity Rransitions in delta-doped GaAs/AlAs Multiple Quantum Wells

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