The application of secondary Ion mass spectrometry to surface analysis of semiconductor substrates and devices

A. Brown; J. A. van den Berg; J. C. Vickerman

doi:10.1002/sia.740090508

The application of secondary Ion mass spectrometry to surface analysis of semiconductor substrates and devices

A. Brown, J. A. van den Berg, J. C. Vickerman

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The application of static, dynamic and imaging SIMS to semiconductor starting materials and devices is discussed. Static SIMS is used to examine the effect of various chemical preparation methods on the surface of the III‐V compounds InAs, InP and GaAs prior to epitaxial growth of device structures. Dynamic SIMS profiles from a superlattice structure involving alternative GaAlAs ‐ GaAs layers are presented along with an examination of the factors affecting depth resolution for low‐dimensional devices. Finally the importance of imaging or scanning SIMS for chemical mapping and microanalysis of final device structures is discussed.

Original language	English
Pages (from-to)	309-317
Number of pages	9
Journal	Surface and Interface Analysis
Volume	9
Issue number	5
DOIs	https://doi.org/10.1002/sia.740090508
Publication status	Published - Jul 1986
Externally published	Yes

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abstract = "The application of static, dynamic and imaging SIMS to semiconductor starting materials and devices is discussed. Static SIMS is used to examine the effect of various chemical preparation methods on the surface of the III‐V compounds InAs, InP and GaAs prior to epitaxial growth of device structures. Dynamic SIMS profiles from a superlattice structure involving alternative GaAlAs ‐ GaAs layers are presented along with an examination of the factors affecting depth resolution for low‐dimensional devices. Finally the importance of imaging or scanning SIMS for chemical mapping and microanalysis of final device structures is discussed.",

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AB - The application of static, dynamic and imaging SIMS to semiconductor starting materials and devices is discussed. Static SIMS is used to examine the effect of various chemical preparation methods on the surface of the III‐V compounds InAs, InP and GaAs prior to epitaxial growth of device structures. Dynamic SIMS profiles from a superlattice structure involving alternative GaAlAs ‐ GaAs layers are presented along with an examination of the factors affecting depth resolution for low‐dimensional devices. Finally the importance of imaging or scanning SIMS for chemical mapping and microanalysis of final device structures is discussed.

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