Abstract
The application of static, dynamic and imaging SIMS to semiconductor starting materials and devices is discussed. Static SIMS is used to examine the effect of various chemical preparation methods on the surface of the III‐V compounds InAs, InP and GaAs prior to epitaxial growth of device structures. Dynamic SIMS profiles from a superlattice structure involving alternative GaAlAs ‐ GaAs layers are presented along with an examination of the factors affecting depth resolution for low‐dimensional devices. Finally the importance of imaging or scanning SIMS for chemical mapping and microanalysis of final device structures is discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 309-317 |
| Number of pages | 9 |
| Journal | Surface and Interface Analysis |
| Volume | 9 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - Jul 1986 |
| Externally published | Yes |
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Brown, A., van den Berg, J. A., & Vickerman, J. C. (1986). The application of secondary Ion mass spectrometry to surface analysis of semiconductor substrates and devices. Surface and Interface Analysis, 9(5), 309-317. https://doi.org/10.1002/sia.740090508