Abstract
The application of static, dynamic and imaging SIMS to semiconductor starting materials and devices is discussed. Static SIMS is used to examine the effect of various chemical preparation methods on the surface of the III‐V compounds InAs, InP and GaAs prior to epitaxial growth of device structures. Dynamic SIMS profiles from a superlattice structure involving alternative GaAlAs ‐ GaAs layers are presented along with an examination of the factors affecting depth resolution for low‐dimensional devices. Finally the importance of imaging or scanning SIMS for chemical mapping and microanalysis of final device structures is discussed.
| Language | English |
|---|---|
| Pages | 309-317 |
| Number of pages | 9 |
| Journal | Surface and Interface Analysis |
| Volume | 9 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - Jul 1986 |
| Externally published | Yes |
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The application of secondary Ion mass spectrometry to surface analysis of semiconductor substrates and devices. / Brown, A.; van den Berg, J. A.; Vickerman, J. C.
In: Surface and Interface Analysis, Vol. 9, No. 5, 07.1986, p. 309-317.Research output: Contribution to journal › Article
TY - JOUR
T1 - The application of secondary Ion mass spectrometry to surface analysis of semiconductor substrates and devices
AU - Brown, A.
AU - van den Berg, J. A.
AU - Vickerman, J. C.
PY - 1986/7
Y1 - 1986/7
N2 - The application of static, dynamic and imaging SIMS to semiconductor starting materials and devices is discussed. Static SIMS is used to examine the effect of various chemical preparation methods on the surface of the III‐V compounds InAs, InP and GaAs prior to epitaxial growth of device structures. Dynamic SIMS profiles from a superlattice structure involving alternative GaAlAs ‐ GaAs layers are presented along with an examination of the factors affecting depth resolution for low‐dimensional devices. Finally the importance of imaging or scanning SIMS for chemical mapping and microanalysis of final device structures is discussed.
AB - The application of static, dynamic and imaging SIMS to semiconductor starting materials and devices is discussed. Static SIMS is used to examine the effect of various chemical preparation methods on the surface of the III‐V compounds InAs, InP and GaAs prior to epitaxial growth of device structures. Dynamic SIMS profiles from a superlattice structure involving alternative GaAlAs ‐ GaAs layers are presented along with an examination of the factors affecting depth resolution for low‐dimensional devices. Finally the importance of imaging or scanning SIMS for chemical mapping and microanalysis of final device structures is discussed.
UR - http://www.scopus.com/inward/record.url?scp=0022741530&partnerID=8YFLogxK
U2 - 10.1002/sia.740090508
DO - 10.1002/sia.740090508
M3 - Article
VL - 9
SP - 309
EP - 317
JO - Surface and Interface Analysis
T2 - Surface and Interface Analysis
JF - Surface and Interface Analysis
SN - 0142-2421
IS - 5
ER -